IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0621040
(2007-01-08)
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등록번호 |
US-7695563
(2010-05-20)
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발명자
/ 주소 |
- Lu, Xinliang
- Jian, Ping
- Yoo, Jong Hyun
- Lai, Ken Kaung
- Mak, Alfred W.
- Jackson, Robert L.
- Xi, Ming
|
출원인 / 주소 |
|
대리인 / 주소 |
Patterson & Sheridan, LLP
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인용정보 |
피인용 횟수 :
20 인용 특허 :
276 |
초록
▼
In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten d
In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.
대표청구항
▼
The invention claimed is: 1. A method for depositing a tungsten material on a substrate within a process chamber, comprising: exposing a substrate within a process chamber simultaneously to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tung
The invention claimed is: 1. A method for depositing a tungsten material on a substrate within a process chamber, comprising: exposing a substrate within a process chamber simultaneously to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process; removing reaction by-products generated during the tungsten deposition process from the process chamber; exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process; removing reaction by-products generated during the soak process from the process chamber; and repeating the tungsten deposition process and the soak process during a cyclic deposition process. 2. The method of claim 1, wherein the reducing gas comprises a reducing agent selected from the group consisting of silane, disilane, borane, diborane, derivatives thereof, and combinations thereof. 3. The method of claim 2, wherein the tungsten precursor comprises tungsten hexafluoride. 4. The method of claim 3, wherein the cyclic deposition process is repeated until the tungsten nucleation layer has a thickness of about 500 Å. 5. The method of claim 3, wherein the tungsten nucleation layer is deposited on a barrier layer comprising titanium nitride. 6. The method of claim 1, wherein the tungsten deposition process lasts for a time period within a range from about 0.1 seconds to about 10 seconds. 7. The method of claim 6, wherein the time period lasts about 3 seconds or less. 8. The method of claim 7, wherein the time period lasts about 1 second or less. 9. The method of claim 1, wherein the soak process lasts for a time period of up to about 10 seconds. 10. The method of claim 9, wherein the reducing gas comprises diborane. 11. The method of claim 9, wherein the reducing gas comprises silane. 12. The method of claim 1, wherein the removing reaction by-products generated during the tungsten deposition process overlaps in time with the soak process. 13. A method for depositing a tungsten material on a substrate within a process chamber, comprising: exposing a substrate within a process chamber simultaneously to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process, wherein the reducing gas comprises diborane; removing reaction by-products generated during the tungsten deposition process from the process chamber; exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process; removing reaction by-products generated during the soak process from the process chamber; and repeating the tungsten deposition process and the soak process during a cyclic deposition process. 14. The method of claim 13, wherein the tungsten precursor comprises tungsten hexafluoride. 15. The method of claim 14, wherein the cyclic deposition process is repeated until the tungsten nucleation layer has a thickness of about 500 Å. 16. The method of claim 14, wherein the tungsten nucleation layer is deposited on a barrier layer comprising titanium nitride. 17. The method of claim 13, wherein the tungsten deposition process lasts for a time period within a range from about 0.1 seconds to about 10 seconds. 18. The method of claim 17, wherein the time period lasts about 3 seconds or less. 19. The method of claim 18, wherein the time period lasts about 1 second or less. 20. The method of claim 13, wherein the soak process lasts for a time period of up to about 10 seconds. 21. The method of claim 13, wherein the removing reaction by-products generated during the tungsten deposition process overlaps in time with the soak process. 22. A method for depositing a tungsten material on a substrate within a process chamber, comprising: exposing a substrate within a process chamber simultaneously to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process, wherein the reducing gas comprises silane; removing reaction by-products generated during the tungsten deposition process from the process chamber; exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process; removing reaction by-products generated during the soak process from the process chamber; and repeating the tungsten deposition process and the soak process during a cyclic deposition process. 23. The method of claim 22, wherein the tungsten precursor comprises tungsten hexafluoride. 24. The method of claim 23, wherein the cyclic deposition process is repeated until the tungsten nucleation layer has a thickness of about 500 Å. 25. The method of claim 23, wherein the tungsten nucleation layer is deposited on a barrier layer comprising titanium nitride. 26. The method of claim 22, wherein the tungsten deposition process lasts for a time period within a range from about 0.1 seconds to about 10 seconds. 27. The method of claim 26, wherein the time period lasts about 3 seconds or less. 28. The method of claim 27, wherein the time period lasts about 1 second or less. 29. The method of claim 22, wherein the soak process lasts for a time period of up to about 10 seconds. 30. The method of claim 22, wherein the removing reaction by-products generated during the tungsten deposition process overlaps in time with the soak process.
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