Precursor formulation of a silicon carbide material
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B32B-009/00
B32B-019/00
C04B-035/52
C04B-035/56
출원번호
UP-0357716
(2006-02-16)
등록번호
US-7700202
(2010-05-20)
발명자
/ 주소
Easler, Timothy E.
Szweda, Andrew
Stein, Eric
출원인 / 주소
Alliant Techsystems Inc.
대리인 / 주소
TraskBritt
인용정보
피인용 횟수 :
7인용 특허 :
8
초록▼
A precursor formulation of a silicon carbide material that includes a ceramic material and a boron-11 compound. The ceramic material may include silicon and carbon and, optionally, oxygen, nitrogen, titanium, zirconium, aluminum, or mixtures thereof. The boron-11 compound may be a boron-11 isotope o
A precursor formulation of a silicon carbide material that includes a ceramic material and a boron-11 compound. The ceramic material may include silicon and carbon and, optionally, oxygen, nitrogen, titanium, zirconium, aluminum, or mixtures thereof. The boron-11 compound may be a boron-11 isotope of boron oxide, boron hydride, boron hydroxide, boron carbide, boron nitride, boron trichloride, boron trifluoride, boron metal, or mixtures thereof. A material for use in a nuclear reactor component is also disclosed, as are such components, as well as a method of producing the material.
대표청구항▼
What is claimed is: 1. A precursor formulation of a silicon carbide material, comprising: a ceramic material comprising silicon and carbon; and a sintering aid consisting of a boron-11 isotope of boron oxide. 2. The precursor formulation of claim 1, wherein the ceramic material comprises silicon
What is claimed is: 1. A precursor formulation of a silicon carbide material, comprising: a ceramic material comprising silicon and carbon; and a sintering aid consisting of a boron-11 isotope of boron oxide. 2. The precursor formulation of claim 1, wherein the ceramic material comprises silicon and carbon in stoichiometric amounts or in carbon-rich amounts. 3. The precursor formulation of claim 1, wherein the ceramic material further comprises oxygen, nitrogen, titanium, zirconium, aluminum, or mixtures thereof. 4. The precursor formulation of claim 1, wherein the ceramic material comprises silicon carbide fibers, silicon oxycarbide fibers, silicon carbon nitride fibers, silicon oxycarbonitride fibers, polytitanocarbosilane fibers, or mixtures thereof. 5. The precursor formulation of claim 1, wherein the boron-11 isotope of boron oxide is a solid, a liquid, or a gas at room temperature. 6. The precursor formulation of claim 1, wherein the boron-11 isotope of boron oxide comprises less than or equal to approximately 2% by weight of a total weight of the precursor formulation. 7. The precursor formulation of claim 1, wherein the boron-11 isotope of boron oxide comprises from approximately 0.5% by weight of a total weight of the precursor formulation to approximately 1.5% by weight of the total weight of the precursor formulation. 8. A precursor formulation of a silicon carbide material, comprising: a sintering aid incorporated in a silicon and carbon material, the sintering aid consisting of a boron-11 isotope of boron oxide.
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이 특허에 인용된 특허 (8)
Baumann Robert C. (Dallas TX) Hossain Timothy Z. (Ithaca NY), Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially f.
Deleeuw David C. (Midland MI) Lipowitz Jonathan (Midland MI) Lu Paul P. (Hacienda Heights CA), Preparation of substantially crystalline silicon carbide fibers from polycarbosilane.
Barnard Thomas Duncan ; Lipowitz Jonathan ; Nguyen Kimmai Thi, Process to produce silicon carbide fibers using a controlled concentration of boron oxide vapor.
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