IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
UP-0279039
(2006-04-07)
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등록번호 |
US-7700474
(2010-05-20)
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발명자
/ 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
Wood, Herron & Evans, L.L.P.
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인용정보 |
피인용 횟수 :
5 인용 특허 :
6 |
초록
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An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2
An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm/minute, preferably 2-10 nm/min, to produce the high N/Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.
대표청구항
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What is claimed is: 1. A method of operating an Ionized Physical Vapor Deposition (IPVD) system to deposit a barrier layer, the method comprising: positioning a patterned substrate on a wafer table within a processing chamber, the processing chamber including a tantalum target opposite the wafer ta
What is claimed is: 1. A method of operating an Ionized Physical Vapor Deposition (IPVD) system to deposit a barrier layer, the method comprising: positioning a patterned substrate on a wafer table within a processing chamber, the processing chamber including a tantalum target opposite the wafer table; flowing a process gas comprising an inert gas and a nitrogen containing gas into the processing chamber; inductively coupling an energy from an inductively coupled plasma (ICP) source to the inert gas within the processing chamber to form a high density plasma; sputtering tantalum from the tantalum target and into the high density plasma; adjusting a chamber pressure within the processing chamber and a bias power applied to the wafer table to achieve at least 70% ionization of the tantalum within the high density plasma; depositing an ultra-thin TaN barrier layer having a high nitrogen concentration by a deposition process onto the patterned substrate, wherein the ultra-thin TaN barrier layer has a resistivity of at least 1000 micro-Ohm-cm, resists copper diffusion, and provides a high etch resistant etch-stop layer for subsequent processes; and removing the patterned substrate from the processing chamber. 2. The method as claimed in claim 1, wherein: the ICP source includes an antenna that is coupled to the processing chamber and that operates at an ICP power and an ICP frequency to create the high density plasma in the processing chamber; and the IPVD system includes an RF bias generator coupled to an electrode in the wafer table such that the deposition step further comprises: establishing the chamber pressure of between approximately 50 mTorr and approximately 150 mTorr; flowing the process gas into the processing chamber at a first flow rate of between approximately 10 sccm and approximately 1000 sccm; energizing the antenna during a processing time; energizing the tantalum target during the processing time with a target power of between approximately 100 watts and approximately 3000 watts; coupling, to the electrode in the wafer table during the processing time, an RF substrate bias power; flowing nitrogen-containing gas into the processing chamber at a second flow rate; and exposing the patterned substrate to the high-density plasma during the processing time. 3. The method as claimed in claim 2, wherein the processing time is from approximately 10 seconds to approximately 240 seconds. 4. The method as claimed in claim 2, wherein the ICP frequency is from approximately 1 MHz to approximately 100 MHz. 5. The method as claimed in claim 2, wherein the ICP power is greater than approximately 2000 watts and less than approximately 10000 watts. 6. The method as claimed in claim 2, wherein the RF substrate bias power is equal to or greater than approximately zero watts and less than approximately 400 watts. 7. The method as claimed in claim 2, wherein the target power is greater than approximately 300 watts and less than approximately 2000 watts. 8. The method as claimed in claim 2, wherein a deposition rate is established during the processing time, the deposition rate comprising a field deposition rate, a sidewall deposition rate, or a bottom surface deposition rate, or a combination thereof. 9. The method as claimed in claim 8, wherein the field deposition rate is in a range of from approximately −10 nm/min to approximately +20 nm/min. 10. The method as claimed in claim 9, wherein the field deposition rate is in a range of from approximately −5 nm/min to approximately +5 nm/min. 11. The method as claimed in claim 8, wherein the sidewall deposition rate is less than approximately +10 nm/min. 12. The method as claimed in claim 11, wherein the sidewall deposition rate is less than approximately +5 nm/min. 13. The method as claimed in claim 8, wherein the bottom surface deposition rate is in a range of from approximately −2 nm/mm to approximately +10 nm/min. 14. The method as claimed in claim 13, wherein the bottom surface deposition rate is in a range of from approximately −1 nm/min to approximately +5 nm/min. 15. The method as claimed in claim 2, wherein the IPVD system further comprises a magnet assembly coupled to the processing chamber for producing a magnetic field within the processing chamber. 16. The method as claimed in claim 2, wherein the deposition process is repeated Ni times, wherein Ni is an integer between one and five. 17. The method as claimed in claim 2, wherein the nitrogen-containing gas comprises N2, NO, N2O, or NH3, or a combination thereof. 18. The method as claimed in claim 2, wherein the second flow rate of the nitrogen-containing gas is established at a value of approximately zero sccm during a portion of the processing time. 19. The method as claimed in claim 2, wherein the second flow rate of the nitrogen-containing gas is pulsed between a first value and a second value during a portion of the processing time. 20. The method as claimed in claim 1, wherein the depositing step is used to repair a barrier layer. 21. The method as claimed in claim 1, wherein the ultra-thin barrier layer is less than four nm thick on a sidewall of a via of the patterned substrate. 22. The method as claimed in claim 1, wherein the depositing step is used to produce a net deposition rate of less than about 15 nm/min in a field area of the patterned substrate. 23. An Ionized Physical Vapor Deposition (IPVD) method of depositing a barrier layer comprising: positioning a patterned substrate on a wafer table within a processing chamber of an IPVD apparatus having a tantalum target therein; establishing within the processing chamber a chamber pressure of at least 50 mTorr; flowing a process gas comprising an inert gas and a nitrogen-containing gas into the processing chamber; inductively coupling energy from an RF antenna at a power and a frequency to the inert gas in the processing chamber that will create a high density inductively coupled plasma (ICP) in the processing chamber; sputtering tantalum from the tantalum target and into the high density ICP and ionizing at least 70% of the sputtered tantalum in the high density lop; depositing an ultra-thin TaN barrier layer at a rate of not more than approximately 20 nm/min by sufficiently adjusting the flow of the nitrogen containing gas into the processing chamber to produce the ultra-thin TaN barrier layer having a resistivity of at least 1000 micro-ohm-cm; and removing the patterned substrate from the processing chamber. 24. The method of claim 23 wherein: the depositing of the ultra-thin TaN barrier layer includes flowing the nitrogen-containing gas at a rate and energizing the tantalum target at a power that avoids nitriding the tantalum target. 25. The method of claim 24 wherein: the depositing of the ultra-thin TaN barrier layer is at a rate of between 2 nm/min and 10 nm/min. 26. The method of claim 23 wherein: the depositing of the ultra-thin TaN barrier layer is at a rate of between 2 nm/min and 10 nm/min. 27. The method of claim 23 further comprising: coupling an RF substrate bias power to an electrode in the wafer.
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