Multiband semiconductor compositions for photovoltaic devices
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-025/00
H01L-031/00
출원번호
UP-0999456
(2004-11-29)
등록번호
US-7709728
(2010-06-03)
발명자
/ 주소
Walukiewicz, Wladyslaw
Yu, Kin Man
Wu, Junqiao
출원인 / 주소
The Regents of the University of California
대리인 / 주소
Fulbright & Jaworski, LLP
인용정보
피인용 횟수 :
1인용 특허 :
2
초록▼
The highly mismatched alloy Zn1-yMnyOxTe1-x, 0≦y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formati
The highly mismatched alloy Zn1-yMnyOxTe1-x, 0≦y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
대표청구항▼
What is claimed is: 1. A semiconductor composition comprising: a ternary or quaternary alloy, said alloy comprising a Group II element, a Group VI element, Oxygen and optionally a third element “A”, wherein said alloy has a mole fraction composition of (Group II)(1-y)(A)yOx(Group VI)(
What is claimed is: 1. A semiconductor composition comprising: a ternary or quaternary alloy, said alloy comprising a Group II element, a Group VI element, Oxygen and optionally a third element “A”, wherein said alloy has a mole fraction composition of (Group II)(1-y)(A)yOx(Group VI)(1-x), and 0≦y<1 and 0<x<1 and “A” comprises Mg; and wherein said alloy further comprises O derived narrow band to expand absorption to full solar spectrum. 2. The semiconductor composition of claim 1, wherein the alloy comprises: Zn0.88A0.12OxTel-x, and 0<x<0.05. 3. The semiconductor composition of claim 2, wherein x is between about 0.01 and 0,05. 4. The semiconductor composition of claim 3, wherein x is between about 0.02 and 0.04. 5. The semiconductor composition of claim 1, wherein the alloy comprises: Cdl-yMgyOxTel-x, 0<y<1 and 0<x<0.05. 6. The semiconductor composition of claim 5, wherein x is between about 0.01 and 0.05. 7. The semiconductor composition of claim 5, wherein x is between about 0.02 and 0.04. 8. A semiconductor composition comprising: a ternary or quaternary alloy, said alloy comprising a Group II element, a Group VI element, Oxygen and optionally a third element “A”, wherein said alloy has a mole fraction composition of (Group II)(1-y)(A)yOX(Group VI)(1-X), and 0<y<1 and 0<x<0.05 and “A” comprises either Mn or Mg, and wherein the Group II element does not comprise Cd; and wherein said alloy further comprises O derived narrow band to expand absorption to full solar spectrum. 9. The semiconductor composition of claim 8, wherein the alloy comprises: Zn0.88A0.12OxTel-x, and 0<x<0.05. 10. The semiconductor composition of claim 9, wherein x is between about 0.01 and 0.05. 11. The semiconductor composition of claim 10, wherein x is between about 0.02 and 0.04. 12. A semiconductor composition comprising: a Group II element, optionally another Element “A”; further comprising either S or Se, and further comprising oxygen and tellurium, wherein said composition has a mole fraction composition of (Group II)(X)(A)(1-X)(S or Se)(1-y-z)(Te)(y)(O)Z and 0<x<1, 0<z<0.04 and 0<y<0.02; and wherein said composition further comprises O derived narrow band to expand absorption to full solar spectrum. 13. The semiconductor composition of claim 12, wherein the composition comprises ZnxMnl-xSe(1-y-Z)TeyOZ, and 0<x<l, 0<z<0.04 and 0<y<0.2). 14. The semiconductor composition of claim 13, wherein Z is between about 0.01 and 0.04. 15. The semiconductor composition of claim 14, wherein z is between about 0.02 and 0.04. 16. A photovoltaic device comprising the composition of claim 1, thereby providing an efficient solar cell. 17. A photovoltaic device comprising the composition of claim 8, thereby providing an efficient solar cell. 18. A photovoltaic device comprising the composition of claim 12, thereby providing an efficient solar cell.
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이 특허에 인용된 특허 (2)
Norton Paul R. (Santa Barbara CA), Integrated IR and mm-wave detector.
Kitoh Masahiro,JPX ; Ishino Masato,JPX ; Matsui Yasushi,JPX, Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor.
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