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[미국특허] Apparatus including showerhead electrode and heater for plasma processing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/509
  • C23C-016/505
  • C23F-001/00
  • H01L-021/306
  • C23C-016/06
  • C23C-016/22
출원번호 UP-0835400 (2004-04-30)
등록번호 US-7712434 (2010-06-03)
발명자 / 주소
  • Dhindsa, Rajinder
  • Lenz, Eric
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Buchanan Ingersoll & Rooney PC
인용정보 피인용 횟수 : 33  인용 특허 : 46

초록

A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member

대표청구항

What is claimed is: 1. A showerhead electrode assembly, comprising: a showerhead electrode adapted to be mounted in an interior of a vacuum chamber and supply process gas to a gap in which plasma is generated between the showerhead electrode and a substrate support; a gas distribution member compri

이 특허에 인용된 특허 (46) 인용/피인용 타임라인 분석

  1. Kojima Masayuki (Kokubunji JPX) Ito Yoshikazu (Yamanashi JPX) Tomita Kazuhsi (Kawaguchi JPX) Tozawa Shigeki (Nirasaki JPX) Iimuro Shunichi (Yamanashi JPX) Arasawa Masashi (Enzan JPX) Nishimura Eiichi, Anisotropic etching method and apparatus.
  2. Matsuki, Nobuo; Umemoto, Seijiro; Hyodo, Yasuyoshi, Apparatus and method for forming low dielectric constant film.
  3. Matsuki, Nobuo; Umemoto, Seijiro; Hyodo, Yasuyoshi, Apparatus and method for forming low dielectric constant film.
  4. Ho Andrew W. (Pinole CA), Bis(thio)ethylene ashless wear inhibitors and lubricating oils.
  5. Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
  6. Degner Raymond L. (Los Altos CA) Lenz Eric H. (Palo Alto CA), Composite electrode for plasma processes.
  7. Horiuchi Takao (Tokyo JPX) Arai Izumi (Yokohama JPX) Tahara Yoshifumi (Yamato JPX), Cooling of a plasma electrode system for an etching apparatus.
  8. Bower, Christopher Andrew; Zhou, Otto; Zhu, Wei, Device comprising carbon nanotube field emitter structure and process for forming device.
  9. Ji Ding ; Hidehiro Kojiri JP; Yoshio Ishikawa JP; Keiji Horioka JP; Ruiping Wang ; Robert W. Wu ; Hoiman Hung, Dielectric etch process reducing striations and maintaining critical dimensions.
  10. Tracy David H. (Norwalk CT) Smith Donald L. (Palo Alto CA), Electrode for plasma etching system.
  11. Lilleland John ; Hubacek Jerome S. ; Kennedy William S., Electrode for plasma processes and method for a manufacture and use thereof.
  12. Lilleland John ; Hubacek Jerome S. ; Kennedy William S., Electrode for plasma processes and method for manufacture and use thereof.
  13. Horiuchi Takao (Fuchu JPX) Arai Izumi (Yokohama JPX) Tahara Yoshifumi (Yamato JPX), Etching method and etching apparatus.
  14. Zhao Jun ; Schreiber Alex, Faceplate thermal choke in a CVD plasma reactor.
  15. Shinriki, Hiroshi; Matsumoto, Kenji, Film deposition apparatus and method.
  16. Dhindsa Rajinder ; Hao Fangli ; Lenz Eric, Gas distribution apparatus for semiconductor processing.
  17. McMillin, Brian K.; Knop, Robert, Gas distribution apparatus for semiconductor processing.
  18. Akira Kuibira JP; Hirohiko Nakata JP, Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus.
  19. Tsuei, Lun; Sen, Soovo; Lee, Ju-Hyung; Rocha-Alvarez, Juan Carlos; Shmurun, Inna; Zhao, Maosheng; Kim, Troy; Venkataraman, Shankar, Heated gas distribution plate for a processing chamber.
  20. Singh Vikram ; McMillin Brian ; Ni Tom ; Barnes Michael ; Yang Richard, Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing.
  21. Moslehi Mehrdad M., Method for multi-zone high-density inductively-coupled plasma generation.
  22. Li, Li; Howard, Bradley J., Method of controlling striations and CD loss in contact oxide etch.
  23. Shimizu, Akira; Fukuda, Hideaki; Kawano, Baiei; Sato, Kazuo, Method of film deposition using single-wafer-processing type CVD.
  24. Chida Atsushi (Nara) Sannomiya Hitoshio (Osaka) Nomoto Katsuhiko (Kashiwara) Okamoto Hiroshi (Nara) Yamamoto Yoshihiro (Nara), Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder.
  25. Lenz, Eric H., Plasma confinement by use of preferred RF return path.
  26. Lenz Eric H. (San Jose CA) Dible Robert D. (Fremont CA), Plasma etching apparatus utilizing plasma confinement.
  27. Ishida Toshimichi,JPX ; Yamada Yuichiro,JPX ; Takisawa Takahiro,JPX ; Tanabe Hiroshi,JPX, Plasma processing apparatus.
  28. Koshiishi Akira,JPX ; Ogasawara Masahiro,JPX ; Hirose Keizo,JPX ; Nagaseki Kazuya,JPX ; Tomoyoshi Riki,JPX ; Aoki Makoto,JPX, Plasma processing apparatus.
  29. Jyunichi Tanaka JP; Toru Otsubo JP; Toshio Masuda JP; Ichiro Sasaki JP; Tetsunori Kaji JP; Katsuya Watanabe JP, Plasma processing apparatus and plasma processing method.
  30. Masuda, Toshio; Takahashi, Kazue; Fukuyama, Ryoji; Tamura, Tomoyuki, Plasma processing apparatus and plasma processing method.
  31. Senzaki, Shigeru; Sasaki, Toshiki; Aoto, Tadashi; Nagayama, Nobuyuki; Mitsuhashi, Kouji, Processing device and method of maintaining the device, mechanism and method for assembling processing device part, and lock mechanism and method for locking the lock mechanism.
  32. Fukunaga Yukio,JPX ; Shinozaki Hiroyuki,JPX ; Tsukamoto Kiwamu,JPX ; Saitoh Masao,JPX, Reactant gas ejector head.
  33. Murakami Takeshi,JPX ; Takeuchi Noriyuki,JPX ; Shinozaki Hiroyuki,JPX ; Tsukamoto Kiwamu,JPX ; Fukunaga Yukio,JPX ; Hongo Akihisa,JPX, Reactant gas ejector head and thin-film vapor deposition apparatus.
  34. Hao Fangli ; Dhindsa Rajinder ; Pourhashemi Javad, Reaction chamber component having improved temperature uniformity.
  35. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
  36. Hytros, Mark M.; Tran, Truc T.; Teoh, Hongbee; Lei, Lawrence Chung-Lai; Gelatos, Avgerinos; Umotoy, Salvador P., Showerhead assembly for a processing chamber.
  37. Dhindsa, Rajinder; Lenz, Eric, Showerhead electrode design for semiconductor processing reactor.
  38. Gray David C. (Sunnyvale CA), Surface cleaning and conditioning using hot neutral gas beam array.
  39. Lind, Gary, Tapered post, showerhead design to improve mixing on dual plenum showerheads.
  40. Nakagawa Toshiyuki (Fuchu JPX) Takahashi Nobuyuki (Fuchu JPX) Akimoto Takashi (Fuchu JPX), Temperature control system for semiconductor wafer or substrate.
  41. Chang-Jae Kim KR, Temperature controllable gas distributor.
  42. Sajoto Talex ; Selyutin Leonid ; Zhao Jun ; Dornfest Charles, Temperature controlled gas feedthrough.
  43. Baek Yong Ku,KRX ; Park Young Jin,KRX ; Kim Jong Choul,KRX, Thin film deposition apparatus.
  44. Takeuchi Noriyuki,JPX ; Murakami Takeshi,JPX ; Shinozaki Hiroyuki,JPX ; Tsukamoto Kiwamu,JPX ; Nakaniwa Masaru,JPX ; Matsuda Naoki,JPX, Thin-film vapor deposition apparatus.
  45. Matsuse Kimihiro (Tokyo JPX) Lee Hideki (Nirasaki JPX) Osada Hatsuo (Yamanashi-ken JPX) Tanaka Sumi (Yamanashi-ken JPX), Vacuum processing apparatus.
  46. Horie Kuniaki,JPX ; Nakada Tsutomu,JPX ; Murakami Takeshi,JPX ; Suzuki Hidenao,JPX ; Abe Masahito,JPX ; Araki Yuji,JPX, Vapor-phase film growth apparatus and gas ejection head.

이 특허를 인용한 특허 (33) 인용/피인용 타임라인 분석

  1. Davis, Matthew Fenton; Lian, Lei, Advanced process sensing and control using near infrared spectral reflectometry.
  2. Hardin, Randall; Keihl, Jonathan; Lytle, Duane, Anchoring inserts, electrode assemblies, and plasma processing chambers.
  3. Sung, Edward; Smith, Colin F.; Hamilton, Shawn M., Anti-transient showerhead.
  4. Sabri, Mohamed; Augustyniak, Edward; Keil, Douglas L.; Lingampalli, Ramkishan Rao; Leeser, Karl; Barnett, Cody, Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor.
  5. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Clamped showerhead electrode assembly.
  6. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Clamped showerhead electrode assembly.
  7. Larson, Dean Jay; Stevenson, Tom; Wang, Victor, Composite showerhead electrode assembly for a plasma processing apparatus.
  8. Larson, Dean Jay; Stevenson, Tom; Wang, Victor, Composite showerhead electrode assembly for a plasma processing apparatus.
  9. Borean, Christophe; Delcarri, Jean-Luc, Device and process for chemical vapor phase treatment.
  10. Marakhtanov, Alexei; Dhindsa, Rajinder; Bise, Ryan; Li, Lumin; Nam, Sang Ki; Rogers, Jim; Hudson, Eric; Delgadino, Gerardo; Bailey, III, Andrew D.; Kellogg, Mike; de la Llera, Anthony, Dual zone temperature control of upper electrodes.
  11. Patrick, Roger; Dhindsa, Raj; Bettencourt, Greg; Marakhtanov, Alexei, Electrode assembly and plasma processing chamber utilizing thermally conductive gasket.
  12. Patrick, Roger; Dhindsa, Raj; Bettencourt, Greg; Marakhtanov, Alexei, Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings.
  13. Larson, Dean J.; Stevenson, Tom; Wang, Victor, Film adhesive for semiconductor vacuum processing apparatus.
  14. Larson, Dean J.; Stevenson, Tom; Wang, Victor, Film adhesive for semiconductor vacuum processing apparatus.
  15. Kakegawa, Takashi, Film forming apparatus and method, gas supply device and storage medium.
  16. Lee, Chang Jae; Kwon, Young-Ho, Gas injection unit and thin film deposition apparatus having the same.
  17. Bettencourt, Gregory R.; Bhattacharyya, Gautam; Gosselin, Simon; Chao, Sandy, Gasket with positioning feature for clamped monolithic showerhead electrode.
  18. Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.
  19. Sabri, Mohamed; Lingampalli, Ramkishan Rao; Leeser, Karl F., Hybrid ceramic showerhead.
  20. Keil, Douglas; Augustyniak, Edward; Leeser, Karl; Sabri, Mohamed, Mechanical suppression of parasitic plasma in substrate processing chamber.
  21. Taylor, Travis Robert, Method of making a gas distribution member for a plasma processing chamber.
  22. Dhindsa, Rajinder; Kellogg, Mike, Plasma processing chamber with flexible symmetric RF return strap.
  23. Brown, Daniel Arthur; Bogart, Jeff A.; Kenworthy, Ian J., Replaceable upper chamber parts of plasma processing apparatus.
  24. Brown, Daniel Arthur; Bogart, Jeffrey A.; Kenworthy, Ian J., Replaceable upper chamber parts of plasma processing apparatus.
  25. Sharpless, Leonard J.; Singh, Harmeet; Kang, Michael S., Replaceable upper chamber section of plasma processing apparatus.
  26. Fischer, Andreas; Dhindsa, Rajinder, Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses.
  27. Marakhtanov, Alexei; Dhindsa, Rajinder, Systems and methods for controlling a plasma edge region.
  28. Dhindsa, Rajinder; Povolny, Henry; Antolik, Jerry K., Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body.
  29. Meinhold, Henner W.; Doble, Dan M.; Lau, Stephen Yu-Hong; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  30. Meinhold, Henner; Doble, Dan M.; Lau, Stephen; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  31. Meinhold, Henner; Doble, Dan M.; Lau, Stephen; Wilson, Vince; Srinivasan, Easwar, Temperature controlled showerhead.
  32. Bartlett, Christopher M.; Li, Ming; Henri, Jon; Stowell, Marshall R.; Sabri, Mohammed, Temperature controlled showerhead for high temperature operations.
  33. Faguet, Jacques; Lee, Eric M., Vapor deposition system.

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