IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
UP-0009458
(2008-01-18)
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등록번호 |
US-7724791
(2010-06-14)
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발명자
/ 주소 |
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출원인 / 주소 |
- Northrop Grumman Systems Corporation
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
5 인용 특허 :
93 |
초록
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A laser diode package according to the present invention is composed of CTE mismatched components soldered together. The laser diode package includes a laser diode bar, at least one heat sink, and at least one exothermic layer. Solder layers are adjacent the heat sink(s) and laser diode bar, respect
A laser diode package according to the present invention is composed of CTE mismatched components soldered together. The laser diode package includes a laser diode bar, at least one heat sink, and at least one exothermic layer. Solder layers are adjacent the heat sink(s) and laser diode bar, respectively. The exothermic layer(s) are positioned between the solder layers. The exothermic layer(s) are exposed to an energy source which causes an exothermic reaction to propagate through the exothermic layer thereby melting the solder layers and solder layers. The exothermic layer(s) may be designed to provide sufficient heat to melt the solder layers and solder layers but provide only minimal heat to the laser diode bar and heat sink(s). Several packages can be stacked together to form a laser diode array.
대표청구항
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What is claimed is: 1. A method for manufacturing a laser diode package comprising a laser diode bar and a first heat-sinking structure, the method comprising: depositing a quantity of solder material on a surface of said first heat-sinking structure to form a heat-sinking solder layer that is atta
What is claimed is: 1. A method for manufacturing a laser diode package comprising a laser diode bar and a first heat-sinking structure, the method comprising: depositing a quantity of solder material on a surface of said first heat-sinking structure to form a heat-sinking solder layer that is attached to said surface of said first heating-sinking structure, said quantity of solder material being deposited to create a thickness of less than 5 microns of said heat-sink solder layer; depositing a quantity of exothermic material on said heat-sinking solder layer to form a first exothermic layer that is attached to said heat-sinking solder layer, said depositing of said exothermic material occurring as said exothermic material is in a heated vaporous form to create said first exothermic layer having a thickness less than said heat-sink solder layer; depositing a second quantity of solder material on said first exothermic layer to form a bar solder layer that is attached to said first exothermic layer, said second quantity of solder material being deposited to create a thickness of less than 5 microns of said bar solder layer; after said three previous acts of depositing, positioning said laser diode bar on said bar solder layer; exposing said first exothermic layer to a known energy source to cause liquidification of at least a portion of said heat-sinking solder layer and said bar solder layer; and after said exposing, allowing said heat-sinking solder layer and said bar solder layer to solidify to join said first heat-sinking structure to said laser diode bar. 2. The method of claim 1, wherein said laser diode package further comprises a second heat-sinking structure, the method further comprising: depositing a quantity of solder material on a surface of said second heat-sinking structure to form a second heat-sinking solder layer that is attached to said surface of said second heat-sinking structure, said quantity of solder material being deposited to create a thickness of less than 5 microns on said second heat-sinking solder layer; depositing a quantity of exothermic material on said second heat-sinking solder layer to form a second exothermic layer that is attached to said second heat-sinking solder layer, said depositing of said second exothermic material being in a heated vaporous form to create said second exothermic layer having a thickness less than said second heat-sinking solder layer; and depositing a quantity of solder material on said second exothermic layer to form a second bar solder layer that is attached to said second exothermic layer, said quantity of solder material being deposited to create a thickness of less than 5 microns of said second bar solder layer; after said three previous acts of depositing on said second heat sinking structure, positioning said laser diode bar on said second bar solder layer; exposing said second exothermic layer to a known energy source to cause liquidification of at least a portion of said second heat-sinking solder layer and said second bar solder layer; and after said exposing, allowing said second heat-sinking solder layer and said second bar solder layer to solidify to join said second heat-sinking structure to said laser diode bar. 3. The method of claim 2, wherein said first exothermic layer and said second exothermic layer are simultaneously exposed to said known energy source. 4. The method of claim 1, wherein said first heat-sinking structure is a microchannel cooler. 5. The method of claim 1, wherein said depositing said exothermic material to form said first exothermic layer includes sputtering exothermic material onto said heat-sinking solder layer. 6. The method of claim 1, wherein said depositing said exothermic material to form said first exothermic layer includes e-beam evaporation of exothermic material onto said heat-sinking solder layer. 7. The method of claim 1, wherein the amount of exothermic material is chosen such that a minimal amount of energy is received by said laser diode bar. 8. A method for manufacturing an array of laser diode packages, each of said laser diode packages comprising a laser diode bar and at least one heat-sinking structure, the method comprising: depositing a quantity of solder material on first surfaces of said laser diode packages to attach a first solder layer on each of said first surfaces of said laser diode packages; depositing a quantity of exothermic material on each of said first solder layers to attach an exothermic layer on each of said first solder layers, said depositing of said exothermic material occurring as said exothermic material is in a heated vaporous form, each of said exothermic layers including a fuse portion made from said exothermic material, each of said fuse portions extending beyond an end surface of said laser diode bar within said laser diode package; depositing a quantity of solder material on each of said exothermic layers to attach a second solder layer on each of said exothermic layers; after said three previous acts of depositing, positioning each of said laser diode packages such that said second solder layer of each laser diode package is against an attachment surface of an adjacent one of said laser diode packages; and exposing each of said fuse portions to a known energy source causing said first and second solder layers to join said adjacent ones of said laser diode packages. 9. The method of claim 8, wherein said at least one heat-sinking structure includes first and second heat-sinking structures, said laser diode bar being positioned between said first and second heat-sinking structures, said first solder layer, said exothermic layer, and said second exterior layer being on said first heat-sinking structure. 10. The method of claim 9, wherein said exothermic layers on each package in said away are simultaneously exposed to said known energy source. 11. The method of claim 8, wherein said at least one heat-sinking structure is a microchannel cooler. 12. The method of claim 8, wherein each of said laser diode packages includes a bar-heat-sink exothermic layer for attaching said laser diode bar to said at least one heat-sinking structure, and the method further includes exposing said bar-heat-sink exothermic layer to an energy source to cause interior solder layers between said at least one heat-sinking structure and said laser diode bar to attach said at least one heat-sinking structure and said laser diode bar. 13. The method of claim 12, wherein said exposing each of said fuse portions of said exothermic layers between packages to said known energy source and said exposing said bar-heat-sink exothermic layer to said energy source occur simultaneously. 14. The method of claim 8, wherein each of said laser diode packages includes said laser diode bar and one heat-sinking structure, said attachment surface being a surface on said laser diode bar. 15. The method of claim 8, wherein said depositing of said exothermic material includes e-beam evaporation. 16. The method of claim 8, wherein said fuse portions of said laser diode packages are spaced away from said fuse portions of adjacent laser diode packages. 17. The method of claim 16, wherein said known energy source is a single energy source and said fuse portions on each package in said away are substantially simultaneously exposed to said known energy source. 18. The method of claim 1, wherein said first exothermic layer includes a fuse portion made from said exothermic material, said fuse portion extends beyond an end surface of said laser diode bar such that only said fuse portion is exposed to said known energy source. 19. The method of claim 18, wherein said fuse portion extends beyond said end surface of said laser diode at which energy is emitted. 20. A method for manufacturing a laser diode package comprising a laser diode bar and a first heat-sinking structure, the method comprising: depositing a quantity of solder material on a surface of said first heat-sinking structure to form a heat-sinking solder layer that is attached to said surface of said first heating-sinking structure; depositing a quantity of exothermic material on said heat-sinking solder layer to form a first exothermic layer that is attached to said heat-sinking solder layer, said depositing of said exothermic material occurring while said exothermic material is in a heated vaporous form, said first exothermic layer including a fuse portion; depositing a second quantity of solder material on said first exothermic layer to form a bar solder layer that is attached to said first exothermic layer; after said three previous acts of depositing, positioning said laser diode bar on said bar solder layer, said fuse portion of said first exothermic layer being exposed beyond an end surface of said laser diode bar after said positioning; exposing said fuse portion of said first exothermic layer to a known energy source to cause liquidification of at least a portion of said heat-sinking solder layer and said bar solder layer; and after said exposing, allowing said heat-sinking solder layer and said bar solder layer to solidify to join said first heat-sinking structure to said laser diode bar.
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