IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
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출원번호 |
UP-0239046
(2008-09-26)
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등록번호 |
US-7732327
(2010-06-29)
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발명자
/ 주소 |
- Lee, Sang-Hyeob
- Gelatos, Avgerinos V.
- Wu, Kai
- Khandelwal, Amit
- Marshall, Ross
- Renuart, Emily
- Lai, Wing-Cheong Gilbert
- Lin, Jing
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
21 인용 특허 :
276 |
초록
▼
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In on
Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes to provide tungsten films having significantly improved surface uniformity while increasing the production level throughput. In one embodiment, a method is provided which includes depositing a tungsten silicide layer on the substrate by exposing the substrate to a continuous flow of a silicon precursor while also exposing the substrate to intermittent pulses of a tungsten precursor. The method further provides that the substrate is exposed to the silicon and tungsten precursors which have a silicon/tungsten precursor flow rate ratio of greater than 1, for example, about 2, about 3, or greater. Subsequently, the method provides depositing a tungsten nitride layer on the tungsten suicide layer, depositing a tungsten nucleation layer on the tungsten nitride layer, and depositing a tungsten bulk layer on the tungsten nucleation layer.
대표청구항
▼
The invention claimed is: 1. A method for forming a tungsten-containing material on a substrate, comprising: depositing a tungsten silicide layer on a substrate within a processing chamber during a vapor deposition process, comprising: exposing the substrate to a silicon precursor gas having a cont
The invention claimed is: 1. A method for forming a tungsten-containing material on a substrate, comprising: depositing a tungsten silicide layer on a substrate within a processing chamber during a vapor deposition process, comprising: exposing the substrate to a silicon precursor gas having a continuous gas flow; and exposing the substrate to intermittent pulses of a tungsten precursor gas while flowing the silicon precursor gas and depositing the tungsten silicide layer on the substrate, wherein the substrate is exposed to the silicon precursor gas and the tungsten precursor gas having a silicon/tungsten precursor flow rate ratio of greater than 1; depositing a tungsten nitride layer on the tungsten silicide layer; depositing a tungsten nucleation layer on the tungsten nitride layer; and depositing a tungsten bulk layer on the tungsten nucleation layer. 2. The method of claim 1, wherein the silicon/tungsten precursor flow rate ratio is about 3 or greater. 3. The method of claim 1, wherein the substrate is exposed to each pulse of the tungsten precursor gas for a first time period within a range from about 0.1 seconds to about 2 seconds. 4. The method of claim 3, wherein the substrate is exposed to the silicon precursor gas between the pulses of the tungsten precursor gas for a second time period within a range from about 0.2 seconds to about 5 seconds. 5. The method of claim 4, wherein the first time period is about 0.5 seconds. 6. The method of claim 5, wherein the second time period is about 1 second. 7. The method of claim 1, wherein the silicon precursor gas comprises silane and the tungsten precursor gas comprises tungsten hexafluoride. 8. The method of claim 7, wherein the tungsten bulk layer is deposited by a chemical vapor deposition process. 9. The method of claim 8, wherein the tungsten nucleation layer or the tungsten nitride layer is deposited by an atomic layer deposition process. 10. The method of claim 1, wherein the tungsten suicide layer, the tungsten nitride layer, and the tungsten nucleation layer are each deposited within the same processing chamber. 11. The method of claim 10, wherein the tungsten bulk layer is also deposited within the same processing chamber. 12. A method for forming a tungsten-containing material on a substrate, comprising: positioning a substrate within a processing chamber; depositing a tungsten silicide layer on the substrate during a vapor deposition process, comprising: exposing the substrate to a continuous flow of a silicon precursor gas; and exposing the substrate to intermittent pulses of a tungsten precursor gas while flowing the silicon precursor gas and depositing the tungsten silicide layer, wherein the silicon precursor gas and the tungsten precursor gas are exposed to the substrate having a silicon/tungsten precursor flow rate ratio of about 2 or greater; depositing a tungsten nitride layer on the tungsten silicide layer; and depositing a tungsten material over the tungsten nitride layer. 13. The method of claim 12, wherein the substrate is exposed to the tungsten precursor gas during each of the pulses lasting a first time period within a range from about 0.1 seconds to about 2 seconds. 14. The method of claim 13, wherein the substrate is exposed to the silicon precursor gas and the substrate is not exposed to the tungsten precursor gas after each of the pulses lasting a second time period within a range from about 0.2 seconds to about 5 seconds. 15. The method of claim 14, wherein the first time period is about 0.5 seconds. 16. The method of claim 12, wherein the second time period is about 1 second. 17. The method of claim 12, wherein the silicon precursor gas comprises silane and the tungsten precursor gas comprises tungsten hexafluoride. 18. The method of claim 17, wherein the silicon precursor gas has a flow rate within a range from about 60 sccm to about 200 sccm. 19. The method of claim 18, wherein the tungsten precursor gas has a flow rate within a range from about 30 sccm to about 150 sccm. 20. The method of claim 12, wherein the substrate is heated to a temperature within a range from about 350° C. to about 400° C. during the vapor deposition process. 21. The method of claim 12, wherein the tungsten silicide layer, the tungsten nitride layer, and the tungsten material are each deposited within the same processing chamber. 22. The method of claim 21, wherein depositing the tungsten material further comprises: depositing a tungsten nucleation layer on the tungsten nitride layer; and depositing a tungsten bulk layer on the tungsten nucleation layer. 23. The method of claim 12, wherein the tungsten silicide layer has a resistivity measured across the substrate of about 225Ωμ-cm or less. 24. The method as in claim 23, wherein the tungsten silicide layer has a thickness within a range from about 30 Å to about 200 Å. 25. A method for forming a tungsten-containing material on a substrate, comprising: positioning a substrate within a processing chamber; depositing a tungsten silicide layer on the substrate during a vapor deposition process, comprising: exposing the substrate to a continuous flow of a silicon precursor gas; exposing the substrate to intermittent pulses of a tungsten precursor gas while flowing the silicon precursor gas and depositing the tungsten silicide layer, wherein the silicon precursor gas and the tungsten precursor gas are exposed to the substrate having a silicon/tungsten precursor flow rate ratio of about 2 or greater; depositing a tungsten nitride layer on the tungsten silicide layer during an atomic layer deposition process; depositing a tungsten nucleation layer over the tungsten nitride layer during an atomic layer deposition process, wherein the substrate is exposed to a pre-soak gas comprising a reducing agent during a presoak process prior to depositing the tungsten nucleation layer or the substrate is exposed to a post-soak gas comprising the reducing agent during a post-soak process subsequent to depositing the tungsten nucleation layer; and depositing a tungsten bulk layer over the tungsten nucleation layer.
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