[특허]Passive device structure

[미국특허] Passive device structure 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01G-004/008 H01G-004/06
출원번호	UP-0891443 (2007-08-10)
등록번호	US-7733626 (2010-06-29)
발명자 / 주소	Palanduz, Cengiz A. Min, Yongki
출원인 / 주소	Intel Corporation
대리인 / 주소	Blakely, Sokoloff, Taylor & Zafman LLP
인용정보	피인용 횟수 : 1 인용 특허 : 61

초록 ▼

A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.

대표청구항 ▼

What is claimed is: 1. An apparatus comprising: a first electrode comprising a film of conductive material; a second electrode; a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode; and a coating comprising an overlay of copper on an exposed surface of the film of conductive material, wherein the first electrode comprises a sintered nickel paste layer having barium titanate powder, and wherein the sintered nickel paste is adhered to a surface of an organic substrate. 2. The apparatus of claim 1, wherein the first electrode, the second electrode, and the ceramic material comprise a capacitor structure, the apparatus further comprising an organic substrate, wherein the capacitor structure is coupled to a surface of the organic substrate. 3. The apparatus of claim 2, wherein the ceramic material and the organic substrate are densified materials having a reduced surface energy. 4. The apparatus of claim 2, wherein the capacitor structure is a first capacitor structure and the apparatus further comprises a second capacitor structure coupled to an opposite second surface of the organic substrate. 5. The apparatus of claim 1, wherein at least one of the first electrode and the second electrode comprise a composite of a first film and a second film, the first film disposed between the second film and the ceramic material. 6. The apparatus of claim 1, wherein the ceramic material comprises a film thickness on the order of one micron. 7. The apparatus of claim 1, wherein the apparatus comprises a package substrate. 8. The apparatus of claim 7, wherein the package substrate is a single die singulated from a sheet of package substrates. 9. An apparatus comprising: a first electrode comprising a film of conductive material; a second electrode; a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode; and a coating comprising an overlay of copper on an exposed surface of the film of conductive material, wherein the coating comprises a plating of copper material and wherein the first electrode comprises a nickel foil. 10. The apparatus of claim 9 wherein the plating of copper material comprises sintered copper particles. 11. The apparatus of claim 9, wherein the second electrode comprises a sintered nickel paste material. 12. An apparatus comprising: a first electrode; a second electrode; a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode, wherein at least one of the first electrode and the second electrode comprise a composite of a first film and a second film, the first film disposed between the second film and the ceramic material, and wherein the first film comprises nickel foil and the second film comprises copper. 13. The apparatus of claim 12, wherein the foil comprises a rolled nickel material. 14. The apparatus of claim 12, wherein the foil, the first electrode, the second electrode, the ceramic material, and the copper comprise singulated material layers of a die. 15. A capacitor structure comprising: a first electrode comprising a nickel foil; a second electrode; a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode; and a plating of copper material on a surface of the nickel foil. 16. The capacitor structure of claim 15, wherein the first electrode comprises a film of conductive material; and further comprising a coating comprising copper on an exposed surface of the film of conductive material. 17. The capacitor structure of claim 15, wherein the first electrode comprises a sintered nickel paste layer having barium titanate powder, and wherein the sintered nickel paste is adhered to a surface of a singulated organic substrate die.

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[미국특허] Passive device structure 원문보기

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