IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0220455
(2005-09-06)
|
등록번호 |
US-7744793
(2010-07-19)
|
발명자
/ 주소 |
- Lemaire, Alexander B.
- Lemaire, Charles A.
- Stordal, Leif T.
- Thomforde, Dale J.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
18 인용 특허 :
60 |
초록
▼
The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas t
The present invention provides apparatus and methods for growing fullerene nanotube forests, and forming nanotube films, threads and composite structures therefrom. In some embodiments, an interior-flow substrate includes a porous surface and one or more interior passages that provide reactant gas to an interior portion of a densely packed nanotube forest as it is growing. In some embodiments, a continuous-growth furnace is provided that includes an access port for removing nanotube forests without cooling the furnace substantially. In other embodiments, a nanotube film can be pulled from the nanotube forest without removing the forest from the furnace. A nanotube film loom is described. An apparatus for building layers of nanotube films on a continuous web is described.
대표청구항
▼
What is claimed is: 1. A method for producing a nanotube film, the method comprising: supplying a carbon-bearing precursor gas and using the carbon-bearing precursor gas for growing a first nanotube forest on a first substrate positioned within a reaction chamber having an access port, wherein the
What is claimed is: 1. A method for producing a nanotube film, the method comprising: supplying a carbon-bearing precursor gas and using the carbon-bearing precursor gas for growing a first nanotube forest on a first substrate positioned within a reaction chamber having an access port, wherein the reaction chamber is positioned in a furnace; and pulling a first length of nanotube film from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber. 2. A method for producing a nanotube film, the method comprising: supplying a carbon-bearing precursor gas and using the carbon-bearing precursor gas for growing a first nanotube forest on a first substrate positioned within a reaction chamber having an access port, wherein the reaction chamber is positioned in a furnace; and pulling a first length of nanotube film from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber, wherein the pulling of the first length of nanotube film from the first nanotube forest on the first substrate includes pulling the film with a vacuum-activated puller bar. 3. The method of claim 1, wherein the first substrate is an interior-flow substrate having a nanoporous surface layer, the method further comprising: flowing a reactant gas through the interior-flow substrate, wherein the reactant gas includes acetylene and helium. 4. The method of claim 1, further comprising: growing a second nanotube forest on a second substrate positioned within the reaction chamber; splicing the first length of nanotube film to the second nanotube forest; and pulling an additional length of nanotube film from the second nanotube forest on the second substrate by additional pulling on the first length of nanotube film. 5. The method of claim 4, further comprising linking the first substrate and the second substrate into a continuous loop. 6. The method of claim 4, further comprising linking a plurality of first substrates and second substrates into a continuous loop to form a plurality of linked substrates. 7. The method of claim 6, further comprising advancing the continuous loop as the nanotube forest grown on each of the substrates is pulled from the substrates. 8. The method of claim 1, further comprising: providing a rotatable substrate for the first substrate; rotating the rotatable substrate while growing nanotube forest thereon; and wherein the pulling of the first length of nanotube film from the first nanotube forest on the rotatable substrate includes pulling a first continuous nanotube film from the rotatable substrate as it rotates and while the nanotube forest is growing thereon. 9. The method of claim 8, further comprising utilizing a rotatable substrate that is substantially cylindrical. 10. The method of claim 9, further comprising pulling the continuous nanotube film at an angle that is between a plane tangential to the cylindrical rotatable substrate and a plane that is radially perpendicular to the rotatable substrate. 11. An apparatus for producing a nanotube film, the apparatus comprising: a furnace; a reaction chamber positioned within the furnace and configured to hold a first substrate positioned within the reaction chamber, the reaction chamber having an access port that allows access to the first substrate from outside the reaction chamber, wherein the first substrate includes a growth surface on which a first nanotube forest can be synthesized; and a gas-supply system that supplies a carbon-bearing precursor gas to the first substrate, wherein the apparatus is configured to use the carbon-bearing precursor gas to grow the first nanotube forest on the first substrate while the first substrate is positioned in the reaction chamber, wherein the apparatus pulls a first length of nanotube film from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber. 12. An apparatus for producing a nanotube film, the apparatus comprising: a furnace; a reaction chamber positioned within the furnace and configured to hold a first substrate positioned within the reaction chamber, the reaction chamber having an access port configured to allow access to the first substrate from outside the reaction chamber, wherein the first substrate includes a growth surface on which a first nanotube forest can be synthesized; a gas-supply system configured to supply a carbon-bearing precursor gas to the first substrate, wherein the apparatus is configured to use the carbon-bearing precursor gas to grow the first nanotube forest on the first substrate while the first substrate is positioned in the reaction chamber; and a vacuum-operated puller bar configured to manipulate a nanotube film pulled from the nanotube forest, wherein the apparatus is configured such that a first length of nanotube film can be pulled from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber. 13. The apparatus of claim 11, wherein the first substrate is a flow-through substrate. 14. The apparatus of claim 11, wherein the first substrate is a rotatable substrate that is substantially cylindrical. 15. The apparatus of claim 11, wherein the first substrate is a rotatable substrate, the apparatus further comprising an access port to access the rotatable substrate from outside the furnace. 16. The apparatus of claim 11, wherein the first substrate is a rotatable substrate, wherein the apparatus is configured to continuously grow and harvest nanotube forest as the first substrate rotates. 17. An apparatus for producing a nanotube film, the apparatus comprising: a furnace; a reaction chamber positioned within the furnace and configured to hold a first substrate positioned within the reaction chamber, the reaction chamber having an access port that allows access to the first substrate from outside the reaction chamber, wherein the first substrate includes a growth surface on which a first nanotube forest can be synthesized; and a gas-supply system that supplies a carbon-bearing precursor gas to the first substrate, wherein the apparatus is configured to use the carbon-bearing precursor gas to grow the first nanotube forest on the first substrate while the first substrate is positioned in the reaction chamber, wherein the apparatus pulls a first length of nanotube film can be pulled from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber, wherein the apparatus is configured to hold a second substrate positioned within the reaction chamber, and wherein the apparatus grows a second nanotube forest on the second substrate positioned within the reaction chamber and splices the first length of nanotube film to the second nanotube forest, and then pulls an additional length of nanotube film from the second nanotube forest on the second substrate by additional pulling on the first length of nanotube film. 18. The apparatus of claim 11, wherein the apparatus includes a continuous loop that includes the first substrate and the second substrate, wherein the continuous loop is configured to convey the first and second substrates through the furnace. 19. The apparatus of claim 11, further comprising a linked-substrate loop that includes the first substrate and a plurality of other individual linked-substrates that each include a growth surface on which a nanotube forest can be synthesized, wherein the linked-substrate loop can be rotated to position the individual linked-substrates within the reaction chamber to provide for nanotube forest synthesis. 20. The apparatus of claim 19, wherein at least one of the plurality of individual linked-substrates is a flow-through substrate. 21. The apparatus of claim 19, further comprising a first access port and a second access port positioned on the furnace and wherein the reaction chamber also has a second access port positioned on the reaction chamber, wherein the linked-substrate loop exits through the first ports and re-enters through the second ports. 22. An apparatus for producing a nanotube film, the apparatus comprising: a furnace; a reaction chamber positioned within the furnace, the reaction chamber having an access port; means for supplying a carbon-bearing precursor gas; means for using the carbon-bearing precursor gas to grow a first nanotube forest on a first substrate positioned within the reaction chamber; and means for pulling a first length of nanotube film from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber. 23. An apparatus for producing a nanotube film, the apparatus comprising: a furnace; a reaction chamber positioned within the furnace, the reaction chamber having an access port; means for supplying a carbon-bearing precursor gas; means for using the carbon-bearing precursor gas to grow a first nanotube forest on a first substrate positioned within the reaction chamber; and means for pulling a first length of nanotube film from the first nanotube forest on the first substrate through the access port while the nanotube forest is in the reaction chamber; and vacuum-activated means for pulling the first length of nanotube film from the first nanotube forest on the first substrate. 24. The apparatus of claim 22, further comprising: means for growing a second nanotube forest on a second substrate positioned within the reaction chamber; means for splicing the first length of nanotube film to the second nanotube forest; and means for pulling an additional length of nanotube film from the second nanotube forest on the second substrate. 25. The apparatus of claim 22, further comprising: means for growing a second nanotube forest on a second substrate positioned within the reaction chamber; means for splicing the first length of nanotube film to the second nanotube forest; means for pulling an additional length of nanotube film from the second nanotube forest on the second substrate; and means for linking the first substrate, the second substrate, and a plurality of other substrates into a continuous loop of linked substrates. 26. The apparatus of claim 22, wherein the first substrate is a rotatable substrate, the apparatus further comprising: means for rotating the rotatable substrate while growing nanotube forest thereon, wherein the means for pulling of the first length of nanotube film from the first nanotube forest on the rotatable substrate includes means for pulling a first continuous nanotube film from the rotatable substrate as it rotates and while the nanotube forest is growing thereon. 27. The apparatus of claim 11, wherein the apparatus grows a nanotube forest on a second substrate, and wherein the apparatus further comprises a splicing system that splices the first length of nanotube film to the second nanotube forest, and then pulls an additional length of nanotube film from the second nanotube forest on the second substrate by additional pulling on the first length of nanotube film.
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