IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
UP-0437378
(2003-05-13)
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등록번호 |
US-7754999
(2010-08-02)
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발명자
/ 주소 |
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출원인 / 주소 |
- Hewlett-Packard Development Company, L.P.
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인용정보 |
피인용 횟수 :
2 인용 특허 :
79 |
초록
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The described embodiments relate to laser micromachining a substrate. One exemplary embodiment removes substrate material from a substrate to a first depth relative to a first surface of the substrate while delivering an assist gas at a first flow rate; and, removes substrate material at a second gr
The described embodiments relate to laser micromachining a substrate. One exemplary embodiment removes substrate material from a substrate to a first depth relative to a first surface of the substrate while delivering an assist gas at a first flow rate; and, removes substrate material at a second greater depth while delivering the assist gas at a second higher flow rate.
대표청구항
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What is claimed is: 1. A semiconductor substrate processing method comprising: positioning a substrate relative to a laser machine; energizing, with a laser beam produced by the laser machine, a portion of the substrate to promote removal of at least some substrate material to form a desired featur
What is claimed is: 1. A semiconductor substrate processing method comprising: positioning a substrate relative to a laser machine; energizing, with a laser beam produced by the laser machine, a portion of the substrate to promote removal of at least some substrate material to form a desired feature into the substrate; introducing an assist gas at a given flow rate proximate to an energized portion of the substrate; changing laser machining conditions during feature formation, said laser machining conditions comprising changing a laser beam wavelength after a predetermined condition is met, said predetermined condition comprising a predetermined feature depth in the substrate; and increasing the flow rate of the assist gas as feature depth increases in the substrate, wherein said act of increasing includes increasing the flow rate when a first predetermined feature depth is reached. 2. The method of claim 1, wherein said act of introducing is achieved via a nozzle which has a pattern which circumscribes a footprint of the feature. 3. The method of claim 1, wherein said act of introducing comprises introducing an assist gas comprising a single compound. 4. The method of claim 1, wherein said act of introducing is achieved via a nozzle which has a pattern which circumscribes a footprint of the feature and wherein the nozzle remains fixed relative to the substrate during formation of the feature. 5. The method of claim 1, wherein said act of introducing is achieved via one or more nozzles which are moved relative to the substrate during said act of energizing. 6. The method of claim 1, wherein said act of introducing is achieved via one or more nozzles which remain generally fixed relative to the substrate during said act of energizing. 7. The method of claim 1, wherein said act of introducing is achieved via one or more nozzles which are moved along a path relative to the substrate which generally corresponds to a pattern of movement of the laser beam relative to the substrate during said act of energizing. 8. The method of claim 1, wherein said act of energizing and said act of introducing form a through feature in the substrate. 9. The method of claim 1, wherein said act of increasing comprises increasing the flow rate in a linear relationship to feature depth. 10. The method of claim 1, wherein said act of increasingcomprises increasing the flow rate multiple times as feature depth increases in the substrate. 11. The method of claim 1, wherein said act of increasing comprises increasing the flow rate corresponding to an increase in laser beam power. 12. The method of claim 1, wherein said act of increasing comprises increasing the flow rate and changing at least one other different laser machining parameter. 13. A method comprising: positioning a substrate proximate a laser machine, wherein the substrate has a thickness defined by a first surface and a generally opposing second surface; and, cutting the substrate by directing a laser beam at the first surface of the substrate and introducing an assist gas proximate to a region of the substrate contacted by the laser beam, wherein the assist gas is introduced at a higher rate as the laser beam cuts through an increasing percentage of the thickness of the substrate, wherein act of cutting further comprises changing at least one other laser machining condition as the laser beam cuts through an increasing percentage of the thickness of the substrate, said at least one other laser machining condition comprising a laser beam wavelength. 14. The method of claim 13, wherein said act of introducing an assist gas comprises introducing an assist gas comprised of multiple assist gases. 15. The method of claim 14, wherein said act of introducing an assist gas comprised of multiple assist gases comprises introducing at least one halocarbon assist gas and at least one relatively non-reactive assist gas. 16. The method of claim 14, wherein said act of introducing an assist gas comprised of multiple assist gases comprises introducing a minor percentage of a halocarbon gas and a major percentage of a carrier gas. 17. The method of claim 13, wherein said act of cutting forms a feature in the substrate that is generally free of redeposited substrate material. 18. The method of claim 13, wherein act of cutting forms a feature that is defined, at least in part, by a first sidewall and a second generally opposing sidewall, wherein each of the first and second sidewalk is essentially orthogonal to the first surface. 19. The method of claim 13, wherein act of cutting forms a blind feature having an aspect ratio ranging from about 10 to about 20. 20. The method of claim 13, wherein act of cutting forms a through feature having an aspect ratio ranging from about 10 to about 20. 21. A method comprising positioning a substrate proximate a laser machine configured to emit a laser beam, the substrate having a thickness between a first surface and a generally opposing second surface; directing the laser beam at the first surface to form a feature into the substrate through the first surface, wherein the act of directing comprises changing at least one laser beam parameter with increasing feature depth, said at least one laser beam parameter comprising a laser beam wavelength; flowing an assist gas proximate a portion of the first surface at which the laser beam is directed; and, increasing the flow rate of the assist gas as the feature is formed through an increasing percentage of the thickness of the substrate. 22. The method of claim 21, wherein the act of increasing the flow rate comprises increasing the flow rate from a first flow rate to multiple higher flow rates. 23. The method of claim 21, wherein the act of increasing the flow rate comprises increasing the flow rate from a first flow rate in a linear relationship to feature dept. 24. A method of processing a semiconductor substrate comprising: removing substrate material from a substrate at a first depth relative to a first surface of the substrate while delivering an assist gas at a first flow rate for a first set of laser beam conditions comprising a first laser beam wavelength; and, removing substrate material at a second greater depth while delivering the assist gas at a second higher flow rate for a second set of laser beam conditions comprising a second laser beam wavelength. 25. The method of claim 24, wherein the act of removing substrate material from a substrate at a first depth and the act of removing substrate material at a second depth both comprise removing substrate material at substantially the same rate. 26. The method of claim 24, wherein the act of removing substrate material at a second depth comprises changing at least one laser beam parameter utilized far removing substrate material from a substrate at a first depth. 27. A method of laser micromachining a substrate comprising: forming a feature into a substrate by directing a laser beam at a first surface of the substrate; supplying an assist gas to substantially the entire area of the first surface through which the feature is to be formed without positioning the substrate in a chamber; and, moving the laser beam relative to the substrate to form the feature, wherein said act of supplying is achieved via a nozzle which has a pattern which circumscribes a footprint of the feature and wherein the nozzle remains fixed relative to the substrate during formation of the feature. 28. The method of claim 27, wherein said act of supplying comprises supplying an assist gas at a first rate and then supplying the assist gas at a second higher rate as a depth of the feature increases. 29. A method comprising: first laser machining a feature into a substrate to a first feature depth at a first set of laser team conditions and a first set of assist gas conditions; and, after the first laser machining, second laser machining the feature into the substrate to a second feature depth at a second different set of laser beam conditions and a second different set of assist gas conditions, said second different set of laser beam conditions comprising a laser beam wavelength that is different from a laser beam wavelength used as part of said first set of laser beam conditions. 30. The method of claim 29, wherein said act of second laser machining increases a power of the laser beam and a flow rate of assist gas relative to the first act of laser machining. 31. A method of laser micromachining a substrate comprising: at a first laser beam wavelength, first laser machining a feature into a substrate to a first feature depth while supplying assist gas to the substrate according to a first set of assist gas conditions; and, after the first laser machining, at a second laser beam wavelength, second laser machining the feature into the substrate to a second feature depth while supplying assist gas to the substrate according to a second different set of assist gas conditions. 32. The method of claim 31, wherein the second act of laser machining comprises supplying assist gas at a flow rate which is different from a flow rate at which assist gas is supplied during the first act of laser machining. 33. The method of claim 31, wherein the second act of laser machining comprises supplying assist gas at a temperature which is different from a temperature at which assist gas is supplied during the first act of laser machining. 34. The method of claim 31, wherein the second act of laser machining comprises supplying assist gas having a composition which is different from a composition of assist gas supplied during the first act of laser machining.
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