초록 ▼

A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semicondu

A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.

대표청구항 ▼

We claim: 1. A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS), the piezo-diode cantilever comprising: a substrate; a multi-layered film cantilever beam having a distal end anchored to the substrate, and a proximal end; a diode embedded in the cantilever beam and

We claim: 1. A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS), the piezo-diode cantilever comprising: a substrate; a multi-layered film cantilever beam having a distal end anchored to the substrate, and a proximal end; a diode embedded in the cantilever beam and sharing a film layer in common with the cantilever beam; wherein the cantilever beam is formed from a first film layer, made from a first material and having a first crystalline structure; and, wherein the diode is formed from the first film layer and has a second crystalline structure different from the first crystalline structure. 2. The piezo-diode cantilever of claim 1 wherein the cantilever beam has a top surface and a bottom surface; and wherein the diode is formed in a film layer selected from a group consisting of a film layer overlying the cantilever beam top surface, a film layer overlying the cantilever beam bottom surface, and a film layer embedded within the cantilever beam. 3. The piezo-diode cantilever of claim 1 wherein the cantilever beam and diode film layers are made from materials selected from a group consisting of amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-SiGe, poly-SiGe, Si-containing materials, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, compound semiconductor materials, and combinations of the above-mentioned materials. 4. The piezo-diode cantilever of claim 1 wherein the substrate is a material selected from a group consisting of glass, polymer, quartz, metal foil, Si, Si-containing materials, sapphire, ceramic, and compound semiconductor materials. 5. The piezo-diode cantilever of claim 1 the cantilever beam includes: the first film layer with a first stress level; and a second film layer with a second stress level overlying the first layer. 6. The piezo-diode cantilever of claim 1 wherein the cantilever beam first film layer is a Si-containing material having an amorphous crystalline structure; and, wherein the diode first film layer has a polycrystalline structure. 7. The piezo-diode cantilever of claim 1 wherein the cantilever beam first film layer has a first stress level responsive to the first crystalline structure; and, wherein the diode first film layer has a second stress level different from the first level, responsive to the second crystalline structure. 8. The piezo-diode of claim 1 wherein the diode is a lateral PIN diode, having a serpentine pattern formed in a Si film layer overlying a cantilever beam top surface. 9. The piezo-diode cantilever of claim 1 wherein the cantilever beam includes: a first film layer first region with a first set of electrical characteristics; and a first film layer second region with a second set of electrical characteristics, different from the first set of electrical characteristics. 10. A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS), the piezo-diode cantilever comprising: a substrate; a multi-layered film cantilever beam having a distal end anchored to the substrate, and a proximal end; a diode embedded in the cantilever beam and sharing a film layer in common with the cantilever beam; and, wherein the diode is a lateral PIN diode, having a serpentine pattern formed in a Si film layer overlying a cantilever beam top surface.