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An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the

An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

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We claim: 1. A method of depositing a multilayered coating on a substrate, which coating is tailored to provide a particular characteristic behavior, wherein all layers of said multilayered coating are deposited from a vapor phase, wherein said multilayered coating includes at least one oxide-based

We claim: 1. A method of depositing a multilayered coating on a substrate, which coating is tailored to provide a particular characteristic behavior, wherein all layers of said multilayered coating are deposited from a vapor phase, wherein said multilayered coating includes at least one oxide-based layer and at least one organic-based layer, wherein the depositing from the vapor phase employs a stagnant source of reactive moieties during the formation of at least one layer, or a portion of at least one layer, of the multilayered coating, and wherein the stagnant source of reactive moieties is charged to a process chamber, without further addition during formation of the at least one layer or the portion of at least one layer. 2. A method in accordance with claim 1, wherein a plurality of oxide-based layers are deposited. 3. A method in accordance with claim 1, wherein at least one additional deposition step employs a non-reactive carrier gas to provide precursor species for deposition. 4. A method in accordance with claim 1, wherein said vapor phase deposition employs a stagnant source of reactive moieties during the formation of each layer of the coating, which source of reactive moieties is charged to the process chamber, without further addition during formation of each layer. 5. A method in accordance with claim 4, wherein said coating layer is deposited using a series of stepped addition and mixing steps during deposition. 6. A method in accordance with claim 1, wherein said method is carried out using a stepped addition of reactive moieties to be consumed during deposition of at least one individual coating layer of said multilayered coating. 7. A method in accordance with claim 6, wherein said individual coating layer is an oxide-based layer. 8. A method in accordance with claim 7, wherein a computer driven process control system is used to provide a series of additions of reactants to the process chamber during deposition of said individual coating layer. 9. A method in accordance with claim 6, wherein a computer driven process control system is used to provide a series of additions of reactants to the process chamber during deposition of said individual coating layer. 10. A method in accordance with claim 1, wherein a plasma treatment is carried out after the deposition of each organic-based layer which is not the final surface layer of the coating. 11. A method in accordance with claim 1, wherein said plurality of oxide-based layers and organic-based layers are deposited so that an oxide-based layer alternates with an organic-based layer. 12. A method in accordance with claim 1, wherein prior to deposition of a first organic-based layer on a substrate, an oxide-based layer is applied over said substrate. 13. A method in accordance with claim 12, wherein said oxide-based layer is deposited using a series of stepped depositions, and wherein a thickness of said oxide based layer ranges from about 5 Å to about 2000 Å. 14. A method in accordance with claim 13, wherein an exposed surface of said oxide-based layer contains —OH moieties. 15. A method in accordance with claim 13, wherein an exposed surface of said oxide-based layer contains halogen moieties. 16. A method in accordance with claim 15, wherein said halogen moieties comprise chlorine. 17. A method in accordance with claim 12, wherein an exposed surface of said oxide-based layer contains —OH moieties. 18. A method in accordance with claim 12, wherein an exposed surface of said oxide-based layer contains halogen moieties. 19. A method in accordance with claim 18, wherein said halogen moieties comprise chlorine. 20. A method in accordance with claim 12, wherein prior to deposition of said oxide-based layer, said substrate is treated using an oxygen-based plasma. 21. A method in accordance with claim 12, wherein said oxide-based layer is formed by a reaction between a chlorosilane vapor and water vapor. 22. A method in accordance with claim 21, wherein said chlorosilane vapor and said water vapor react essentially on said substrate surface. 23. A method in accordance with claim 21, wherein a combination of a partial pressure of a chlorosilane vaporous precursor and a partial pressure of a water vapor precursor are used to control said reaction between said chlorosilane precursor and said water precursor. 24. A method in accordance with claim 23, wherein said chlorosilane is selected from the group consisting of tetrachlorosilane, hexachlorosilane, hexachlorosiloxane and combinations thereof. 25. A method in accordance with claim 23, wherein a total pressure in said process chamber ranges from about 0.5 Torr to about 400 Torr, and a partial pressure of said chlorosilane vaporous precursor ranges from about 0.5 Torr to about 100 Torr. 26. A method in accordance with claim 25, wherein a substrate temperature during deposition of said oxide ranges from about 10° C. to about 130° C. 27. A method in accordance with claim 26, wherein a temperature of a major surface inside said processing chamber ranges from about 20° C. to about 150° C. 28. A method in accordance with claim 23, wherein a partial pressure of said water vapor precursor ranges from about 0.5 Torr to about 300 Torr. 29. A method in accordance with claim 23, wherein, subsequent to the deposition of said oxide and the creation of hydroxyl groups on said oxide surface, a vaporous organo-chlorosilane which includes a specific functional group is reacted with said hydroxyl groups to impart specific functional characteristics to said coating. 30. A method in accordance with claim 29, wherein a partial pressure of said organo-chlorosilane vaporous precursor is used to control said reaction between said organo-chlorosilane precursor and said hydroxyl groups so that said reaction occurs substantially on said substrate surface. 31. A method in accordance with claim 30, wherein said reaction occurs essentially on said substrate surface. 32. A method in accordance with claim 29, wherein said organo-silane vaporous precursor includes a functional moiety selected from the group consisting of an alkyl group, an alkoxyl group, an alkyl substituted group containing fluorine, an alkoxyl substituted group containing fluorine, a vinyl group, an ethynyl group, an epoxy group, a glycoxy group, an acrylo group, a glycol substituted group containing a silicon atom or an oxygen atom, an amino group, and combinations thereof. 33. A method in accordance with claim 32, wherein a total pressure in said process chamber ranges from about 0.5 Torr to about 30 Torr, and a partial pressure of said organo-chlorosilane vaporous precursor ranges from about 0.1 Torr to about 20 Torr. 34. A method in accordance with claim 33, wherein a substrate temperature during deposition of said organo-chlorosilane vaporous precursor ranges from about 10° C. to about 130° C. 35. A method in accordance with claim 34, wherein said temperature of said major process surface ranges from about 20° C. to about 150° C. 36. A method in accordance with claim 1, where more than 50% of the thickness contribution to the multilayered coating is provided by a plurality of oxide-based layers. 37. A method of controlling the surface roughness of a multilayered organo-silicon-containing coating on a substrate, wherein said multilayered coating is deposited from a vapor phase, wherein at least one layer is formed using an organosilane precursor which is introduced into a coating deposition chamber in which said multilayered coating is deposited, and wherein a surface roughness of at least one layer is further controlled by controlling a total pressure in said deposition chamber, a partial pressure of at least one precursor, and a temperature of a substrate on which said coating is deposited, wherein at least two organosilane precursors are introduced into said coating deposition chamber, followed by the introduction of water, whereby controllable co-deposition of said organosilane precursors is obtained. 38. A method in accordance with claim 37, wherein a partial pressure of said water vapor precursor is controlled to adjust said deposition rate or said surface roughness of said organo-silicon-containing coating. 39. A method of depositing a multilayered coating wherein an oxide-based layer thickness in direct contact with a substrate is controlled as a function of the chemical composition of said substrate, and wherein a SAM organic-based layer is deposited directly over said oxide-based layer, whereby an ability of said SAM organic-based layer to bond to said oxide-based layer is improved due to control of said oxide-based layer surface coverage and thickness. 40. A method of depositing a multilayered coating over a substrate, comprising deposition of at least two oxide-based layers and at least one organic-based layer, where each layer is deposited from a vapor phase, wherein said oxide based layer and said organic-based layer are alternated, wherein an oxide-based layer is deposited directly over a surface of said substrate, wherein said deposition employs a stagnant source of reactive moieties during the formation of at least one layer, or a portion of at least one layer, of the multilayered coating, and wherein the stagnant source of reactive moieties is charged to a process chamber, without further addition during formation of the at least one layer or the portion of at least one layer. 41. A method in accordance with claim 40, wherein said multilayered coating includes at least two oxide-based layers and at least two organic-based layers. 42. A method in accordance with claim 41, wherein said multilayered coating includes at least five oxide-based layers and at least five organic-based layers.