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A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic se

A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate.

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The invention claimed is: 1. An article that is a thin-film, field-effect transistor comprising: a thin semiconductive film that consists essentially of a 1,6-heteropyrene compound as an organic semiconductor material, the 1,6-heteropyrene compound comprising heteroatoms at the 1,6-positions in the

The invention claimed is: 1. An article that is a thin-film, field-effect transistor comprising: a thin semiconductive film that consists essentially of a 1,6-heteropyrene compound as an organic semiconductor material, the 1,6-heteropyrene compound comprising heteroatoms at the 1,6-positions in the compound selected from the group consisting of oxygen and sulfur, wherein any of the positions on the compound's heteropyrene aromatic nucleus can be optionally substituted, any two of which substituents can be combined into a ring, either saturated, unsaturated or aromatic fused ring. 2. The article of claim 1 wherein the thin-film, field-effect transistor comprises a dielectric layer, a gate electrode, a source electrode and a drain electrode, and wherein the dielectric layer, the gate electrode, the thin film of organic semiconductor material, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material. 3. The article of claim 1, wherein the heteropyrene compound is represented by the following Structure I: wherein each X is independently selected from O or S and A, B, C, D, E, F, G, and H are independently hydrogen or a substituent that is consistent with the effective semiconducting properties of the compound in a thin film, and wherein any two of the substituents A, B, C, D, E, F, G, and H can optionally form a non-aromatic ring fused to the heteropyrene nucleus, and wherein A and B, and/or E and F, can optionally form an aromatic ring fused to the heteropyrene nucleus in Structure I. 4. The article of claim 3 wherein the substituents A, B, C, D, E, F, G, and H are independently selected from hydrogen and organic groups containing 1 to 12 carbon atoms, which groups may contain other atoms selected from the group consisting of such as oxygen, sulfur, nitrogen, phosphorous, or fluorine, which organic groups are selected not to have an undue adverse affect on the effective semiconductor properties of the heteropyrene compound. 5. The article of claim 3 wherein the substituents A, B, C, D, E, F, G, and H are each hydrogen or a substituted or unsubstituted alkyl, cycloalkyl, aryl, or alkylaryl substituent, and wherein optionally any two substituents in combination can may form a cycloalkyl or unsaturated ring or rings and/or any two of A and B, and/or D and F, can optionally form a fused benzo ring. 6. The article of claim 3 wherein the heteropyrene compound is substituted with at least one electron donating group. 7. The article of claim 3 wherein the substituents, if any, on the heteropyrene nucleus are all electron donating organic substituents. 8. The article of claim 6 wherein the at least one electron donating group is an alkyl group. 9. The article of claim 3, wherein in said structure A, B, C, D, E, F, G, and H are independently selected from H, CH3, linear or branched C2-C4 alkyl, alkenyl, alkoxy, or other electron donating organic group having 1 to 12 carbon atoms, which group may be substituted with an oxygen atom or carbonyl group. 10. The article of claim 3, wherein the heteropyrene compound is represented by one of following two structures, Structure II and III: wherein, for either Structure II and III, A, B, C, D, E, F, G, and H are each independently hydrogen or a substituent and wherein the substituents may form a ring or rings as defined above. 11. The article of claim 10, wherein in said Structure II or III, substituents B, C, D, F, G, and H are independently hydrogen or comprises an alkyl, cycloalkyl, or aryl substituent either substituted or unsubstituted. 12. The article of claim 10, wherein in said Structure II or III the substituents C, D, G, and H are hydrogen and A, B, E, and F are independently a substituent in which substituents A and B, and/or substituents E and F, can form an aromatic or non-aromatic fused ring or rings having 5 to 7 carbon atoms in each ring. 13. The article of claim 10, wherein in said Structure II or III the substituents A, B, C, D, E, F, G, and H may be independently selected from hydrogen and organic substituents selected from the group consisting of oxygen-containing organic substituents and/or a carbon-containing substituents, wherein oxygen-containing substituents have 1 to 12 carbon atoms and are selected from the group consisting of alkoxy, aryloxy, carboalkyl (—C(═O)R), carboaryl (—C(═O)Ar), carboalkoxy (—C(═O)OR), carboaryloxy (—C(═O)OAr), aryl or alkyl ketones (—RC(═O)R) or (—ArC(═O)Ar), all either substituted or unsubstituted all either substituted or unsubstituted, wherein R is a substituted or unsubstituted alky group having 1 to 11 carbon atoms and Ar is a substituted or unsubstituted aromatic group having 1 to 11 carbon atoms; and wherein carbon-containing substituents are selected from the group consisting of alkyl groups of 1 to 12 carbons, cycloalkyl groups of 1 to 12 carbons, aryl groups of 6 to 12 carbons, alkaryl groups of 6 to 12 carbons, and heterocyclic groups having at least one heteroatom and 2 to 12 carbons; all either substituted or unsubstituted; wherein optionally two most adjacent groups on the heteropyrene nucleus may be joined to form a fused ring, either aliphatic or unsaturated, and A, B, E, and F may optionally be a fused ring that is aromatic, provided that creation of any ring will not unduly interfere with the functioning of the semiconductor thin film comprised of the compound. 14. The article of claim 1 wherein the thin film of organic semiconducting material is capable of exhibiting electron mobility greater than 0.001 cm2/Vs. 15. The article of claim 1 wherein the thin film transistor has an on/off ratio of a source/drain current of at least 104. 16. The article of claim 2, wherein the gate electrode is adapted for controlling, by means of a voltage applied to the gate electrode, a current between the source and drain electrodes through the thin film of organic semiconductor material. 17. The article of claim 2 wherein the source, drain, and gate electrodes each independently comprise a material selected from doped silicon, metal, and a conducting polymer. 18. An electronic device selected from the group consisting of integrated circuits, active-matrix display, and solar cells comprising a multiplicity of thin film transistors according to claim 1. 19. The electronic device of claim 18 wherein the multiplicity of the thin film transistors is on a non-participating support that is optionally flexible.