초록 ▼

A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absor

A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.

대표청구항 ▼

What is claimed is: 1. A method of forming a sputtering target, comprising: forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure, wherein: the second material does not negatively impact a pe

What is claimed is: 1. A method of forming a sputtering target, comprising: forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure, wherein: the second material does not negatively impact a performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell; the support structure comprises a barrier layer comprising the second material formed on a backing structure of a third material that is different from the second material; the first material comprises a transition metal selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr and alloys thereof, and an alkali metal selected from a group consisting of Li, Na, and K; the second material is selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr, alloys thereof and nitrides thereof; the backing structure comprises stainless steel; and the barrier layer is capable of blocking diffusion of at least one of Fe, Ni or Cr atoms which negatively impact the performance of the CIS based semiconductor absorber layer from the stainless steel toward the sputtering layer. 2. The method of claim 1, wherein: the backing structure comprises a planar support plate or a hollow support tube; and the barrier layer is formed between the sputtering layer and the backing structure. 3. The method of claim 2, further comprising forming the barrier layer by depositing the second material onto the backing structure. 4. The method of claim 3, wherein the depositing is done by sputtering or thermal spraying. 5. The method of claim 2, further comprising: providing a barrier foil; attaching the barrier foil to the backing structure to form the barrier layer; and hot pressing the first material to the barrier layer to form the sputtering layer and to bond the barrier layer to the backing structure. 6. The method of claim 1, wherein the first material comprises 0.5 to 10 wt % sodium, 0-50 wt % oxygen and balance molybdenum. 7. A method of making a solar cell comprising a substrate, a first electrode, at least one p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer and a second electrode, the method comprising: sputtering the first electrode comprising an alkali-containing transition metal layer from a target comprising: a sputtering layer comprising a first material which comprises an alkali-containing transition metal sputtering layer; and a support structure comprising a second material, wherein the sputtering layer of the target directly contacts the second material; wherein the second material is selected such that atoms which negatively impact a performance of the CIS based alloy material are not incorporated into the p-type semiconductor absorber layer from the alkali containing transition metal layer of the first electrode. 8. The method of claim 7, wherein the method comprises: depositing the first electrode over the substrate; depositing the at least one p-type semiconductor absorber layer over the first electrode; depositing the n-type semiconductor layer over the at least one p-type semiconductor absorber layer; and depositing the second electrode over the n-type semiconductor layer. 9. The method of claim 7, wherein: the support structure comprises a barrier layer comprising the second material formed on a backing structure of a third material that is different from the second material; and the barrier layer blocks diffusion of the atoms which negatively impact the performance of the CIS based alloy material from the backing structure into the sputtering layer such that the atoms which negatively impact the performance of the CIS based alloy material are not incorporated into the alkali containing transition metal layer of the first electrode during the step of sputtering the first electrode and do not diffuse from the first electrode into the at least one p-type semiconductor absorber layer. 10. The method of claim 9, wherein: the backing structure comprises a planar support plate or a hollow support tube; the barrier layer is formed between the sputtering layer and the backing structure; the first material comprises a transition metal selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr and alloys thereof, and an alkali metal selected from a group consisting of Li, Na, and K; the second material is selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr, alloys thereof and nitrides thereof; the backing structure comprises stainless steel; and the barrier layer is capable of blocking diffusion of at least one of Fe, Ni or Cr atoms which negatively impact the performance of the CIS based semiconductor absorber layer from the stainless steel toward the sputtering layer. 11. The method of claim 7, wherein the support structure comprises a backing structure comprising the second material, and wherein the sputtering layer comprises a sputtering material. 12. The method of claim 7, wherein the first material comprises the transition metal selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr and alloys thereof, and the alkali metal selected from a group consisting of Li, Na and K. 13. The method of claim 12, wherein: the first material comprises 0.5 to 10 wt % sodium, 0-50 wt % oxygen and balance molybdenum; and the alkali-containing transition metal layer of the first electrode comprises 0.5 to 10 wt % sodium, 0-50 wt % oxygen and balance molybdenum. 14. A method of forming a sputtering target, comprising: forming a sputtering layer comprising a first material which comprises an alkali-containing transition metal directly on a second material of a support structure, wherein the support structure comprises a barrier layer comprising the second material formed on a backing structure of a third material that is different from the second material; wherein the method further comprises: providing a barrier foil; attaching the barrier foil to the backing structure to form the barrier layer; and hot pressing the first material to the barrier layer to form the sputtering layer and to bond the barrier layer to the backing structure; wherein: the second material does not negatively impact a performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell; the barrier layer is capable of blocking diffusion of atoms from the backing structure into the sputtering layer; the backing structure comprises a planar support plate or a hollow support tube; and the barrier layer is formed between the sputtering layer and the backing structure. 15. The method of claim 14, wherein the first material comprises the transition metal selected from a group consisting of Mo, W, Ta, V, Ti, Nb, Zr and alloys thereof, and the alkali metal selected from a group consisting of Li, Na and K. 16. The method of claim 15, wherein the first material comprises 0.5 to 10 wt % sodium, 0-50 wt % oxygen and balance molybdenum.