초록 ▼

An exemplary light source device (10) includes a power supply (12), a light source (14), and a photodetector (16). The photodetector includes a light sensor (17) and a resistor (18) connected in parallel. The power supply, the light source, and the photodetector are connected in series. When the int

An exemplary light source device (10) includes a power supply (12), a light source (14), and a photodetector (16). The photodetector includes a light sensor (17) and a resistor (18) connected in parallel. The power supply, the light source, and the photodetector are connected in series. When the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source. When the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source.

대표청구항 ▼

What is claimed is: 1. A light source device, comprising: a power supply; a light source; and a photodetector comprising a light sensor and a resistor connected in parallel; wherein the power supply, the light source, and the resistor are connected in series, and when the intensity of ambient light

What is claimed is: 1. A light source device, comprising: a power supply; a light source; and a photodetector comprising a light sensor and a resistor connected in parallel; wherein the power supply, the light source, and the resistor are connected in series, and when the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source, and when the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source. 2. The light source device as claimed in claim 1, wherein the light sensor is a doped polycrystalline silicon unit. 3. The light source device as claimed in claim 1, wherein the photodetector is configured to detect the intensity of the ambient light when the intensity of the ambient light is in the range from 0 lux to 10000 lux. 4. The light source device as claimed in claim 1, wherein the resistance of the light sensor is in the range from 0.5KΩ to infinity when the light sensor responds to changes in the intensity of the ambient light. 5. The light source device as claimed in claim 4, wherein the resistance of the light sensor is approximately 5KΩ when the intensity of the ambient light is approximately 1000 lux. 6. The light source device as claimed in claim 1, wherein the light source comprises a plurality of light emitting diodes. 7. The light source device as claimed in claim 6, wherein current flowing though the light emitting diodes increases with an increase in voltage applied to the light emitting diodes. 8. The light source device as claimed in claim 6, wherein the light emitting diodes are connected in series. 9. The light source device as claimed in claim 6, wherein the light emitting diodes are connected in parallel. 10. The light source device as claimed in claim 2, wherein the doped polycrystalline silicon unit comprises doping atoms, and the sensitivity of the light sensor is proportional to the amount of doping atoms in the doped polycrystalline silicon unit. 11. The light source device as claimed in claim 10, wherein the doping atoms are selected from the group consisting of boron atoms, phosphorus atoms, and arsenic atoms. 12. A method for modulating a brightness of light emitted by a light source device, the method comprising: providing a power supply and a light source, the power supply providing a constant voltage to the light source; providing a photodetector, the photodetector comprising a doped polycrystalline silicon unit and a fixed resistance connected in parallel, the fixed resistance connected to the light source and the power supply in series, the doped polycrystalline silicon unit being sensitive to light and automatically changing its resistance in response to changes in ambient light; exposing the photodetector to ambient light; and the doped polycrystalline silicon unit automatically changing its resistance in response to a change in the ambient light, the photodetector thereby automatically modulating its own resistance, and thereby modulating a current passing through the light source such that a brightness of light emitted by the light source is modulated according to the ambient light. 13. The method as claimed in claim 12, wherein when the brightness of the ambient light increases, the resistance of the doped polycrystalline silicon unit decreases and the current passing through the light source increases such that the brightness of the light emitted by the light source increases. 14. The method as claimed in claim 12, wherein when the brightness of the ambient light decreases, the resistance of the doped polycrystalline silicon unit increases and the current passing through the light source decreases such that the brightness of light emitted by the light source decreases. 15. The method as claimed in claim 12, wherein the ambient light comprises radiation in the infrared, visible, and ultraviolet regions of the light spectrum. 16. The method as claimed in claim 12, wherein the intensity of the ambient light ranges from 0 lux to 10000 lux. 17. A liquid crystal display, comprising: a liquid crystal panel; and a light source device positioned for illuminating the liquid crystal panel, the light source device comprising: a power supply; a light source; and a photodetector comprising a light sensor and a resistor connected in parallel; wherein the power supply, the light source, and the resistor are connected in series, and when the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source, and when the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source.