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A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent colu

A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.

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What is claimed is: 1. A semiconductor device comprising: an insulating film over a substrate; a semiconductor layer over the insulating film, wherein the semiconductor layer comprises a source region, a drain region, an LDD region and a channel forming region, wherein the source region and the dra

What is claimed is: 1. A semiconductor device comprising: an insulating film over a substrate; a semiconductor layer over the insulating film, wherein the semiconductor layer comprises a source region, a drain region, an LDD region and a channel forming region, wherein the source region and the drain region comprise a metal silicide; a gate insulating film over the semiconductor layer; a first conductive layer comprising a polysilicon film formed over the gate insulating film; a second conductive layer comprising a metal silicide formed on the first conductive layer; and a side wall insulating film on a side surface of the first and second conductive layers, wherein the semiconductor layer includes columnar or needle-like crystals, wherein the semiconductor layer has a thickness within a range from 150 Å to 450 Å, wherein a height of asperities of the insulating film is less than 30 Å, wherein the gate insulating film is over the LDD region, and wherein the semiconductor device is a static random access memory. 2. The semiconductor device according to claim 1, wherein the insulating film is a silicon oxide film. 3. The semiconductor device according to claim 1, wherein the substrate is a glass substrate. 4. The semiconductor device according to claim 1, wherein the side wall insulating film is a silicon nitride film. 5. The semiconductor device according to claim 1, wherein the side wall insulating film is a silicon oxide film. 6. A semiconductor device comprising: an insulating film over a substrate; a semiconductor layer over the insulating film, wherein the semiconductor layer comprises a source region, a drain region, an LDD region and a channel forming region, wherein the source region and the drain region comprise a metal silicide; a gate insulating film over the semiconductor layer; a first conductive layer comprising a polysilicon film formed over the gate insulating film; a second conductive layer comprising a metal silicide formed on the first conductive layer; a side wall insulating film on a side surface of the first and second conductive layers; an interlayer insulating film over the first and second conductive layers; a first wiring formed over the interlayer insulating film and electrically connected to the source region through a first contact hall formed in the interlayer insulating film; a second wiring formed over the interlayer insulating film and electrically connected to the drain region through a second contact hall formed in the interlayer insulating film; and a third wiring formed over the interlayer insulating film and electrically connected to the second conductive layer through a third contact hall formed in the interlayer insulating film, wherein the semiconductor layer includes columnar or needle-like crystals, wherein the semiconductor layer has a thickness within a range from 150 Å to 450 Å, wherein a height of asperities of the insulating film is less than 30 Å, and wherein the gate insulating film is over the LDD region. 7. The semiconductor device according to claim 6, wherein the insulating film is a silicon oxide film. 8. The semiconductor device according to claim 6, wherein the substrate is a glass substrate. 9. The semiconductor device according to claim 6, wherein the side wall insulating film is a silicon nitride film. 10. The semiconductor device according to claim 6, wherein the side wall insulating film is a silicon oxide film. 11. The semiconductor device according to claim 6, wherein the interlayer insulating film is a silicon oxide film. 12. The device of claim 6, wherein the interlayer insulating film is on and in contact with the second conductive layer. 13. The device of claim 6, wherein the semiconductor device is a static random access memory. 14. An electronic device comprising the semiconductor device according to claim 6, wherein the electronic device is selected from the group consisting of a TV camera, a head-mount display, a car navigation, a projection display, a video camera, a personal computer, and a cellular telephone. 15. A semiconductor device comprising: an insulating film over a substrate; a semiconductor layer over the insulating film, wherein the semiconductor layer comprises a source region, a drain region, an LDD region and a channel forming region, wherein the source region and the drain region comprise a metal silicide; a gate insulating film over the semiconductor layer; a gate electrode over the gate insulating film; and a side wall insulating film on a side surface of the gate electrode, wherein the gate electrode comprises a polysilicon film, wherein an upper portion of the gate electrode is a metal silicide, wherein the semiconductor layer includes columnar or needle-like crystals, wherein the semiconductor layer has a thickness within a range from 150 Å to 450 Å, wherein a height of asperities of the insulating film is less than 30 Å, and wherein the gate insulating film is over the LDD region. 16. The semiconductor device according to claim 15, further comprising an interlayer insulating film formed on and in contact with the gate electrode. 17. The semiconductor device according to claim 15, wherein the LDD region is located under the side wall. 18. The semiconductor device according to claim 15, wherein a length of the LDD region is substantially equal to a length of the sidewall. 19. The device of claim 15, wherein the semiconductor device is a static random access memory. 20. An electronic device comprising the semiconductor device according to claim 15, wherein the electronic device is selected from the group consisting of a TV camera, a head-mount display, a car navigation, a projection display, a video camera, a personal computer, and a cellular telephone.