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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Thin film semiconductor device and its manufacturing method

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-029/15    H01L-027/12   
미국특허분류(USC) 257/072; 257/350; 257/408; 257/903; 257/E27.098; 257/E29.151
출원번호 UP-0121852 (2008-05-16)
등록번호 US-7812351 (2010-11-01)
우선권정보 JP-8-061891(1996-02-23); JP-8-061892(1996-02-23)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 4  인용 특허 : 197
초록
▼

A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an...

대표
청구항
▼

What is claimed is: 1. A semiconductor device comprising: an insulating film over a substrate; a semiconductor layer over the insulating film, wherein the semiconductor layer comprises a source region, a drain region, an LDD region and a channel forming region, wherein the source region and the drain region comprise a metal silicide; a gate insulating film over the semiconductor layer; a first conductive layer comprising a polysilicon film formed over the gate insulating film; a second conductive layer comprising a metal silicide formed on the first con...

이 특허에 인용된 특허 (197)

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