초록 ▼

A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the

A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

대표청구항 ▼

What is claimed is: 1. A physical vapor deposition apparatus, comprising: a chamber body having chamber walls and a magnetron assembly disposed over the chamber body; a first target disposed below the magnetron assembly, the first target having: a first surface; a bonding layer disposed on a second

What is claimed is: 1. A physical vapor deposition apparatus, comprising: a chamber body having chamber walls and a magnetron assembly disposed over the chamber body; a first target disposed below the magnetron assembly, the first target having: a first surface; a bonding layer disposed on a second surface; a side surface, wherein the side surface is exposed to atmosphere; and an electrical power connection disposed on the side surface of the first target; a first backing plate coupled to the second surface; a second target disposed below the magnetron assembly, the second target having: a third surface; a bonding layer disposed on a fourth surface; a side surface, wherein the side surface is exposed to atmosphere; and an electrical power connection disposed on the side surface of the second target; a second backing plate coupled to the fourth surface; a target support member having a sealing member receiving area proximate a sealing member receiving area of the first target and a sealing member receiving area of the second target; and a shield disposed proximate to a processing region within the chamber body, the side surface of the first target and the side surface of the second target extending towards the chamber walls to positions beyond the shield, the first surface of the first target and the third surface of the second target extending to positions below an upper portion of the shield. 2. The apparatus of claim 1, wherein a sealing member forms a first peripheral seal around the first target and a second sealing member forms a second peripheral vacuum-tight seal around the second target. 3. The apparatus of claim 2, wherein a portion of the first peripheral seal is formed between the target support member and the first target by the sealing member, and wherein a portion of the second peripheral seal is formed between the target support member and the second target by the second sealing member. 4. The apparatus of claim 1, wherein a sidewall of the first target is oriented substantially normal to a substrate support surface.