IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
UP-0343264
(2006-01-30)
|
| 등록번호 |
US-7816236
(2010-11-08)
|
|
발명자
/ 주소 |
- Bauer, Matthias
- Arena, Chantal
- Bertram, Ronald
- Tomasini, Pierre
- Cody, Nyles
- Brabant, Paul
- Italiano, Joseph
- Jacobson, Paul
- Weeks, Keith Doran
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
Knobbe, Martens Olson & Bear LLP
|
| 인용정보 |
피인용 횟수 :
25 인용 특허 :
74 |
초록
▼
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-
Chemical vapor deposition methods use trisilane and a halogen-containing etchant source (such as chlorine) to selectively deposit Si-containing films over selected regions of mixed substrates. Dopant sources may be intermixed with the trisilane and the etchant source to selectively deposit doped Si-containing films. The selective deposition methods are useful in a variety of applications, such as semiconductor manufacturing.
대표청구항
▼
What is claimed is: 1. A method of selective deposition of a silicon-containing layer over a substrate, comprising: providing a substrate, the substrate comprising a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surf
What is claimed is: 1. A method of selective deposition of a silicon-containing layer over a substrate, comprising: providing a substrate, the substrate comprising a first surface having a first surface morphology and a second surface having a second surface morphology different from the first surface morphology on the same side of the wafer, wherein the first surface comprises a semiconductor material and the second surface comprises a dielectric material; intermixing trisilane and chlorine gas to thereby form an intermixed feed gas; introducing the intermixed feed gas to the substrate under chemical vapor deposition conditions, wherein the chemical vapor deposition conditions comprise a pressure in the range of about 0.25 Torr to about 100 Torr; and selectively depositing a Si-containing layer onto the first surface without depositing on the second surface by said introducing of the intermixed feed gas comprising trisilane and chlorine, wherein selectively depositing the Si-containing layer takes place at a deposition rate of greater than about 5 nm/min. 2. The method of claim 1, wherein the chemical vapor deposition conditions comprise a temperature in the range of about 450° C. to about 700° C. 3. The method of claim 1, wherein the chemical vapor deposition conditions comprise a temperature in the range of about 500° C. to about 650° C. 4. The method of claim 1, wherein intermixing the trisilane and chlorine gas comprises flowing about 10 g/min to about 200 g/min of trisilane. 5. The method of claim 4, wherein intermixing the trisilane and chlorine gas comprises flowing about 20 sccm to about 200 sccm of chlorine. 6. The method of claim 1, wherein at least a part of the intennixing to form the intermixed feed gas is conducted within the chamber. 7. The method of claim 1, further comprising intermixing a dopant gas to form the intermixed feed gas. 8. The method of claim 7, wherein the dopant gas comprises at least one of a carbon source, a germanium source, an n-type dopant, and a p-type dopant. 9. The method of claim 8, wherein the dopant gas comprises at least two of the carbon source, the germanium source, the n-type dopant, and the p-type dopant. 10. The method of claim 8, wherein the dopant gas comprises a carbon source selected from the group consisting of monosilylmethane, disilylmethane, trisilylmethane, tetrasilylmethane, monomethyl silane, dimethyl silane and 1,3-disilabutane. 11. The method of claim 10, wherein the carbon source comprises monomethyl silane. 12. The method of claim 8, wherein the dopant gas comprises a carbon source, the carbon source comprising a chlorosilylmethane of the formula (SiH3-zClz)xCH4-x-yCly, where x is an integer in the range of 1 to 4 and where y and z are each independently zero or an integer in the range of 1 to 3, with the provisos that x+y≦4 and at least one of y and z is not zero. 13. The method of claim 8, wherein the dopant gas comprises a carbon source, the carbon source comprising an alkylhalosilane of the formula XaSiHb(CnH2n+1)4-a-b, where X is a halogen; n is 1 or 2; a is 1 or 2; b is 0, 1 or 2; and the sum of a and b is less than 4. 14. The method of claim 8, wherein the dopant gas comprises an n-type dopant selected from the group consisting of arsine and phosphine. 15. The method of claim 8, wherein the dopant gas comprises a germanium source selected from the group consisting of germane and digermane. 16. The method of claim 8, wherein the dopant gas comprises a p-type dopant. 17. The method of claim 16, wherein the dopant gas comprises diborane. 18. The method of claim 8, wherein the Si-containing layer comprises an in situ doped silicon film. 19. The method of claim 18, wherein the dopant gas comprises diborane, phosphine or arsine. 20. The method of claim 7, wherein the dopant gas comprises an electrical dopant hydride that getters chlorine from a deposition surface during deposition. 21. The method of claim 1, wherein the first surface morphology is single crystalline. 22. The method of claim 1, wherein the first surface comprises a source and drain region of a partially fabricated transistor. 23. The method of claim 22, wherein the first surface is recessed relative to a channel surface of the partially fabricated transistor. 24. The method of claim 23, wherein the Si-containing layer comprises an alloy configured to introduce stress into a channel region of the partially fabricated transistor to improve electrical carrier mobility. 25. The method of claim 24, wherein the Si-containing layer introduces tensile strain into the channel region. 26. The method of claim 24, wherein the Si-containing layer introduces compressive strain into the channel region. 27. The method of claim 22, wherein the Si-containing layer defines an elevated source/drain structure. 28. The method of claim 1, wherein the Si-containing layer comprises a heteroepitaxial film. 29. The method of claim 1, wherein the Si-containing layer has an average thickness between about 50 Å and about 1000 Å. 30. The method of claim 1, further comprising intermixing a carrier gas to form the intermixed feed gas. 31. The method of claim 30, wherein the carrier gas is a non-hydrogen inert gas. 32. The method of claim 31, wherein no HCl is provided to the chamber while selectively depositing. 33. The method of claim 1, further comprising introducing a non-hydrogen carrier gas comprising nitrogen gas with the intermixed feed gas to the substrate. 34. The method of claim 1, further comprising intermixing an n-type dopant in situ to form the intermixed feed gas.
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