IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0703247
(2007-02-07)
|
등록번호 |
US-7816671
(2010-11-08)
|
우선권정보 |
KR-10-2006-0090596(2006-09-19) |
발명자
/ 주소 |
- Park, Jeong Il
- Han, Jung Seok
- Lee, Sang Yoon
- Jeong, Eun Jeong
- Han, Kook Min
|
출원인 / 주소 |
- Samsung Electronics Co., Ltd.
|
대리인 / 주소 |
Harness, Dickey & Pierce, P.L.C.
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
3 |
초록
▼
Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecula
Disclosed is an organic thin film transistor including a phosphate-based self-assembled monolayer and a method of manufacturing the same. Example embodiments relate to an organic thin film transistor, which may include a single bond type phosphate-based self-assembled monolayer without intermolecular cross-linking, between source/drain electrodes and an organic semiconductor layer, thus exhibiting improved electrical properties, e.g., increased charge mobility, and to a method of manufacturing the organic thin film transistor.
대표청구항
▼
What is claimed is: 1. An organic thin film transistor, comprising a substrate; a gate electrode; a gate insulating layer; source/drain electrodes having functional groups exposed on a surface thereof; an organic semiconductor layer; and a single bond type phosphate-based self-assembled monolayer w
What is claimed is: 1. An organic thin film transistor, comprising a substrate; a gate electrode; a gate insulating layer; source/drain electrodes having functional groups exposed on a surface thereof; an organic semiconductor layer; and a single bond type phosphate-based self-assembled monolayer without intermolecular crosslinking, wherein individual molecules constituting the self-assembled monolayer are not crosslinked with each other, each of the individual molecules of the self-assembled monolayer forming a single bond with each functional group on the surface of the source/drain electrodes, and wherein the self-assembled monolayer has —PO3R1(R) groups, in which each R is a C1-30 alkyl group, R being substitutable with one or more selected from among fluorine, an alkoxy group and a C6-12 aryl group, and R1 is a C1-30 alkyl group, R1 being substitutable with one or more selected from among a cyano group, an alkoxy group, and a C6-12 aryl group. 2. The transistor as set forth in claim 1, wherein the self-assembled monolayer is formed from a precursor compound represented by Formula 1 or 2 below: wherein Z is OPN(R2)2OR1, in which R1 and R2 are each independently a C1-30 alkyl group, R1 and R2 being substitutable with one or more selected from among a cyano group, an alkoxy group, and a C6-12 aryl group, X1, X2, X3, Y1 and Y2 are each independently hydrogen, fluorine, a C1-12 alkyl group, a C6-30 aromatic group, or a C2-30 heteroaromatic group containing one or more heterogeneous atoms, the aromatic group or heteroaromatic group being substitutable with one or more selected from among a C1-12 alkyl group, an alkoxy group, an ester group, a carboxyl group, a thiol group, and an amine group, and m is an integer from about 0 to about 50, and n is an integer from about 1 to about 50; and wherein Z is OPN(R2)2OR1, in which R1 and R2 are each independently a C1-30 alkyl group, R1 and R2 being substitutable with one or more selected from among an alkoxy group, and a C6-12 aryl group, A is hydrogen, fluorine, an alkoxy group, a C6-30 aromatic group, or a C2-30 heteroaromatic group containing one or more heterogeneous atoms, the aromatic group or heteroaromatic group being substitutable with one or more selected from among a C1-12 alkyl group, an alkoxy group, an ester group, a carboxyl group, a thiol group, and an amine group, and the C1-12 alkyl group being substitutable with one or more selected from among fluorine, an alkoxy group, an ester group, a carboxyl group, a thiol group, and an amine group, and R is a C1-30 alkyl group, which is substitutable with one or more selected from among a cyano group, an alkoxy group, and a C6-12 aryl group. 3. The transistor as set forth in claim 2, wherein at least one among the X1, X2, X3, Y1 and Y2 is substituted with one or more fluorine atoms, and the A is substituted with one or more fluorine atoms. 4. The transistor as set forth in claim 2, wherein the R1 is methyl and the R2 is isopropyl. 5. The transistor as set forth in claim 2, wherein the precursor compound represented by Formula 1 or 2 is selected from the group consisting of compounds represented by Formulas 3 to 13 below: 6. The transistor as set forth in claim 1, wherein the self-assembled monolayer has a thickness from about ones to about hundreds of Å. 7. The transistor as set forth in claim 1, wherein the source/drain electrodes comprise a material able to provide an —OH functional group. 8. The transistor as set forth in claim 7, wherein the source/drain electrodes comprise metal oxide or a conductive polymer coated with an oxide film. 9. The transistor as set forth in claim 1, which has a bottom contact structure or a top gate structure.
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