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In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects are produced in the substrate. The substrate is heated, so that at least some of the crystal defects are

In a method for fabricating a semiconductor element in a substrate, micro-cavities are formed in the substrate. Furthermore, doping atoms are implanted into the substrate, whereby crystal defects are produced in the substrate. The substrate is heated, so that at least some of the crystal defects are eliminated using the micro-cavities, and the semiconductor element is formed using the doping atoms.

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The invention claimed is: 1. A method for fabricating a semiconductor element in a substrate, comprising: forming micro-cavities in the substrate; implanting preamorphization ions into the substrate to preamorphize a portion of the substrate and produce crystal defects in the substrate; implanting

The invention claimed is: 1. A method for fabricating a semiconductor element in a substrate, comprising: forming micro-cavities in the substrate; implanting preamorphization ions into the substrate to preamorphize a portion of the substrate and produce crystal defects in the substrate; implanting doping atoms into the preamorphized portion of the substrate; and heating the substrate to eliminate at least some of the crystal defects using the micro-cavities, wherein at least one shallow junction of the semiconductor element is formed in the preamorphized portion of the substrate using the doping atoms. 2. The method as claimed in claim 1, wherein the step of forming the micro-cavities comprises: forming micro-platelets in the substrate, and forming the micro-cavities from the micro-platelets. 3. The method as claimed in claim 2, wherein the micro-platelets are elongated along a plane parallel to the surface of the substrate. 4. The method as claimed in claim 2, wherein the step of forming micro-platelets comprises implanting light ions into the substrate. 5. The method as claimed in claim 2, wherein the step of forming the micro-cavities from the micro-platelets comprises thermally treating the substrate with the micro-platelets. 6. The method as claimed in claim 5, wherein the step thermally treating the substrate with the micro-platelets comprises heating the substrate to a temperature of between 600° C. and 800° C. 7. The method as claimed in claim 6, wherein the step thermally treating the substrate with the micro-platelets comprises heating the substrate for a duration of between 10 minutes and 2 hours. 8. The method as claimed in claim 5, further comprising thermally treating the substrate a second time to form the micro-cavities by a ripening process. 9. The method as claimed in claim 8, wherein the step thermally treating the substrate a second time comprises heating the substrate to a temperature of between 1000° C. and 1300° C. 10. The method as claimed in claim 9, wherein the step thermally treating the substrate a second time comprises heating the substrate for a duration of between 1 microsecond and 1 second. 11. The method as claimed in claim 1, wherein the step of forming micro-cavities comprises implanting light ions into the substrate. 12. The method as claimed in claim 11, wherein the light ions are at least one of the types of light ions selected from the group consisting of H2+ ions, He+ ions, F+ ions, Ne+ ions, Cl+ ions, and Ar+ ions. 13. The method as claimed in claim 11, wherein the step of implanting the light ions comprises implanting a light ion dose of between 1015 cm−2 and 1018 cm−2. 14. The method as claimed in claim 11, wherein the step of implanting the light ions comprises implanting the light ions such that they have an energy of between 10 keV and 150 keV during the implantation. 15. The method as claimed in claim 1, wherein the preamorphization ions are implanted into the substrate after the micro-cavities are formed. 16. The method as claimed in claim 1, wherein the preamorphization ions are germanium ions or silicon ions. 17. The method as claimed in claim 1, wherein the doping atoms are boron atoms, phosphorus atoms, or arsenic atoms. 18. The method as claimed in claim 17, wherein the boron atoms are implanted into the substrate by introducing elementary boron into the substrate, or by introducing boron fluoride into the substrate, or by introducing boron clusters into the substrate. 19. The method as claimed in claim 1, wherein the semiconductor element is a transistor. 20. The method as claimed in claim 19, wherein the semiconductor element is a field effect transistor. 21. The method as claimed in claim 20, wherein at least one region in which the doping atoms are implanted into the substrate forms a source region or a drain region of the field effect transistor. 22. The method as claimed in claim 21, wherein a first region in which the doping atoms are implanted into the substrate forms a source region, and wherein a second region in which the doping atoms are implanted into the substrate forms a drain region of the field effect transistor. 23. The method as claimed in claim 20, further comprising forming the gate insulator of the field effect transistor after the formation of the micro-cavities. 24. The method as claimed in claim 1, wherein the substrate is a silicon substrate. 25. The method as claimed in claim 24, wherein the substrate is a (100)-silicon substrate or a (111)-silicon substrate. 26. A method for fabricating a semiconductor element in a substrate, comprising: forming micro-cavities in the substrate by implanting light ions into the substrate; implanting preamorphization ions into the substrate to preamorphize a portion of the substrate and produce crystal defects in the substrate; implanting doping atoms into the preamorphized portion of the substrate; and heating the substrate to eliminate at least some of the crystal defects using the micro-cavities, wherein at least one shallow junction of the semiconductor element is formed in the preamorphized portion of the substrate using the doping atoms.