Liquid material vaporization apparatus for semiconductor processing apparatus
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23C-016/455
B01D-001/14
출원번호
UP-0626777
(2007-01-24)
등록번호
US-7833353
(2011-01-16)
발명자
/ 주소
Furukawahara, Kazunori
Fukuda, Hideaki
출원인 / 주소
ASM Japan K.K.
대리인 / 주소
Knobbe, Martens, Olson & Bear, LLP
인용정보
피인용 횟수 :
91인용 특허 :
36
초록▼
A liquid material vaporization apparatus for a semiconductor processing apparatus includes: a vaporization tank; an inner partition wall disposed in the tank for dividing the interior of the tank into a charging compartment and a vaporization compartment which are liquid-communicatable with each oth
A liquid material vaporization apparatus for a semiconductor processing apparatus includes: a vaporization tank; an inner partition wall disposed in the tank for dividing the interior of the tank into a charging compartment and a vaporization compartment which are liquid-communicatable with each other over an upper edge of the inner partition wall. A liquid material charged in the charging compartment overflows over the upper edge of the inner partition wall toward the vaporization compartment to store and vaporize the liquid material in the vaporization compartment.
대표청구항▼
What is claimed is: 1. A liquid material vaporization apparatus for a semiconductor processing apparatus, comprising: a vaporization tank having an interior for containing both a liquid material and a vaporized material of the liquid material; an inner partition wall disposed in the tank and having
What is claimed is: 1. A liquid material vaporization apparatus for a semiconductor processing apparatus, comprising: a vaporization tank having an interior for containing both a liquid material and a vaporized material of the liquid material; an inner partition wall disposed in the tank and having an upper edge for dividing the interior of the tank into a charging compartment and a vaporization compartment which are liquid-communicatable with each other over the upper edge of the inner partition wall, wherein a liquid material charged in the charging compartment overflows over the upper edge of the inner partition wall toward the vaporization compartment to store and vaporize the liquid material in the vaporization compartment, wherein the inner partition wall extends downwards from a ceiling and has a U-shaped cross sectional portion having an end forming the upper edge, wherein a bottom of the U-shaped cross sectional portion is disposed near a bottom of the tank; a liquid material inlet disposed near the bottom of the U-shaped cross sectional portion and facing the inner partition wall extending downward from the ceiling in the charging compartment, for supplying the liquid material into the charging compartment of the tank, said liquid material inlet being connected to a liquid material source; a vaporized material outlet disposed in an upper portion of the vaporization compartment of the tank, for discharging a vaporized material of the liquid material from the vaporization compartment of the tank, wherein a passage from the liquid material inlet and the vaporized material outlet is formed to pass the same material through the liquid material inlet and the vaporized material outlet; and a heater disposed for heating the tank and thereby vaporizing the liquid material in the tank. 2. The liquid material vaporization apparatus according to claim 1, wherein the upper edge of the U-shaped cross sectional portion is disposed near a side wall of the tank to flow the liquid material between the U-shaped cross sectional portion and the side wall and under the bottom of the U-shaped cross sectional portion to the vaporization compartment after the liquid material overflows over the upper edge of the U-shaped cross sectional portion. 3. The liquid material vaporization apparatus according to claim 1, wherein the partition wall is disposed nearly in a middle of the tank to divide the vaporization compartment into first and second vaporization compartments, and the vaporized material outlet comprises first and second vaporized material outlets provided in the first and second vaporization compartments, respectively, said vaporization apparatus further comprising another partition wall which is disposed downstream of and in the vicinity of the U-shaped cross sectional portion and which extends from a ceiling of the tank, wherein a lower end of the other partition wall is disposed near the bottom of the tank to flow the liquid material under the lower end to both the first and second vaporization compartments after the liquid material overflows over the upper edge of the U-shaped cross sectional portion. 4. The liquid material vaporization apparatus according to claim 1, wherein the vaporized material outlet is connected to a flow line provided with a valve and a mass flow controller. 5. The liquid material vaporization apparatus according to claim 1, wherein the charging compartment has a volume which is 2% to 20% of the volume of the interior of the tank, said volume of the charging compartment being a volume of the liquid material which can be stored until the liquid material overflows over the upper edge. 6. The liquid material vaporization apparatus according to claim 1, wherein the volume of the interior of the tank is 1,000 to 2,000 cc. 7. The liquid material vaporization apparatus according to claim 1, wherein the charging compartment has a volume of 40 to 200 cc which is defined as a volume of the liquid material which can be stored until the liquid material overflows over the upper edge. 8. The liquid material vaporization apparatus according to claim 1, wherein the tank and the partition wall are made of stainless steel. 9. The liquid material vaporization apparatus according to claim 1, wherein the tank and the partition wall are welded together. 10. The liquid material vaporization apparatus according to claim 1, wherein the liquid material inlet is connected to a flow line provided with a valve which allows intermittent supply of the liquid material to the charging compartment. 11. A semiconductor processing apparatus comprising: a reactor for processing a substrate by thermal chemical vapor deposition (thermal CVD), plasma enhanced chemical vapor deposition (PECVD), or atomic layer chemical vapor deposition (ALCVD); and the liquid material vaporization apparatus of claim 1 coupled to the reactor for supplying a vaporized material to the reactor for the processing. 12. The apparatus according to claim 11, which is provided with no preheating device for heating the liquid material upstream of the liquid material vaporization apparatus. 13. A method of vaporizing a liquid material for a semiconductor processing apparatus, using the liquid material vaporization apparatus of claim 1, comprising: intermittently supplying through the liquid material inlet a liquid material into Hall the charging compartment of the vaporization tank; overflowing the liquid material charged in the charging compartment over the upper edge of the inner partition wall toward the vaporization compartment through the bottom of the U-shaped cross sectional portion of the inner partition wall, said overflowing liquid material having a higher temperature than the liquid material supplied at the liquid material inlet; storing and vaporizing the liquid material in the vaporization compartment; and discharging a vaporized material out of the vaporization compartment through a vaporized material outlet. 14. The method according to claim 13, wherein another partition wall is further disposed downstream of and in the vicinity of the partition wall and extends from a ceiling of the tank, and a lower end of the other partition wall is disposed near the bottom of the tank, wherein the liquid material flows under the lower end to the vaporization compartment after the liquid material overflows over the upper edge of the partition wall. 15. The method according to claim 13, wherein the vaporized material outlet is connected to branched flow lines, and the vaporized material is discharged to multiple reactors. 16. The method according to claim 13, wherein the partition wall is disposed nearly in a middle of the tank to divide the vaporization compartment into first and second vaporization compartments, and the vaporized material outlet comprises first and second vaporized material outlets provided in the first and second vaporization compartments, respectively, wherein another partition wall is further disposed downstream of and in the vicinity of the U-shaped cross sectional portion and extends from a ceiling of the tank, and a lower end of the other partition wall is disposed near the bottom of the tank, wherein the liquid material flows under the lower end to both the first and second vaporization compartments after the liquid material overflows over the upper edge of the U-shaped cross sectional portion. 17. The method according to claim 13, wherein the liquid material is charged in the charging compartment at a time in an amount which is less than 50% of a volume of the charging compartment being a volume of the liquid material which can be stored until the liquid material overflows over the upper edge. 18. The method according to claim 13, wherein the amount of the liquid material charged in the charging compartment at a time is 5-20 cc. 19. The method according to claim 13, wherein the liquid material supplied to the charging compartment of the tank is at room temperature.
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