Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasti
Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.
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We claim, 1. A method for treating a surface, comprising: placing a semiconductor substrate within a chamber, the semiconductor substrate comprising the surface that is to be treated; forming a mixture comprising liquid saturated with a gas; passing the mixture through a nozzle and into the chamber
We claim, 1. A method for treating a surface, comprising: placing a semiconductor substrate within a chamber, the semiconductor substrate comprising the surface that is to be treated; forming a mixture comprising liquid saturated with a gas; passing the mixture through a nozzle and into the chamber to disperse the mixture into aerosol particles within the chamber; the nozzle being a distance from the semiconductor substrate, and the aerosol particles being transported across such distance to the semiconductor substrate surface; providing a temperature gradient along the distance from the nozzle to the semiconductor substrate surface within the chamber, with said gradient comprising an increase in temperature along a direction from the nozzle to the semiconductor substrate surface; the gas being released from the mixture while the aerosol particles are transported along the temperature gradient within the chamber, and the liquid within the aerosol particles having sufficient surface tension so that at least some of the released gas within individual aerosol particles is retained as one or more bubbles encapsulated by liquid of the individual aerosol particles; and impacting the semiconductor substrate surface with the aerosol particles having the gas bubbles encapsulated therein. 2. The method of claim 1 wherein the liquid of the aerosol particles consists of one or more compositions that are chemically inert relative to reaction with the semiconductor substrate surface. 3. The method of claim 1 wherein the liquid of the aerosol particles comprises one or more compositions that are chemically reactive with one or more materials along the semiconductor substrate surface. 4. The method of claim 1 wherein the liquid of the aerosol particles comprises water having one or more of hydrochloric acid, hydrofluoric acid, sulfuric acid, ammonium hydroxide, tetramethyl ammonium hydroxide, and tetraethyl ammonium hydroxide dissolved therein. 5. The method of claim 1 wherein the gas bubbles of the aerosol particles consist of one or more compositions that are chemically inert relative to reaction with the semiconductor substrate surface. 6. The method of claim 5 wherein said one or more compositions comprise one or more of nitrogen, argon, neon, helium, krypton and xenon. 7. The method of claim 1 wherein the gas bubbles of the aerosol particles comprise one or more compositions that react with one or more materials along the semiconductor substrate surface. 8. The method of claim 7 wherein said one or more compositions comprise one or more of H2, NF3, O2 and ozone. 9. The method of claim 7 wherein said one or more materials are comprised by contaminating particulates along the semiconductor substrate surface. 10. A method for treating a surface, comprising: placing a semiconductor substrate within a chamber, the semiconductor substrate comprising the surface that is to be treated; forming a mixture comprising two liquids which differ in volatility relative to one another; one of said two liquids being a higher volatility liquid and the other being a lower volatility liquid; passing the mixture through a nozzle and into the chamber to disperse the mixture into aerosol particles within the chamber; the liquid within the aerosol particles exhibiting a surface tension, the nozzle being a distance from the semiconductor substrate, and the aerosol particles being transported across such distance to the semiconductor substrate surface; providing a temperature gradient along the distance from the nozzle to the semiconductor substrate surface within the chamber, with said gradient comprising an increase in temperature along a direction from the nozzle to the semiconductor substrate surface; the distance, temperature gradient, and surface tension are sufficient so that the higher volatility liquid of the mixture volatilizes and thereby is converted to gas as the aerosol particles are transported along the temperature gradient within the chamber and so that at least some of the gas within individual aerosol particles is retained as one or more bubbles encapsulated by the lower volatility liquid of the individual aerosol particles before reaching the semiconductor substrate surface; and impacting the semiconductor substrate surface with the aerosol particles having the gas bubbles encapsulated therein. 11. The method of claim 10 wherein the higher volatility liquid comprises an organic composition; and wherein the lower volatility liquid comprises water. 12. The method of claim 10 wherein the higher volatility liquid is selected from the group consisting of isopropyl alcohol, methanol, N-methylpyrrolidone and 2-[2-aminoethoxy]ethanol; and wherein the lower volatility liquid includes water. 13. A method for treating a surface, comprising: placing a semiconductor substrate within a chamber, the semiconductor substrate comprising the surface that is to be treated; forming a mixture comprising liquid saturated with a gas; passing the mixture through a nozzle and into the chamber to disperse the mixture into aerosol particles within the chamber; the liquid within the aerosol particles exhibiting a surface tension, the nozzle being a distance from the semiconductor substrate, and the aerosol particles being transported across such distance to the semiconductor substrate surface; providing a temperature gradient along the distance from the nozzle to the semiconductor substrate surface within the chamber, with said gradient comprising an increase in temperature along a direction from the nozzle to the semiconductor substrate surface; the distance, temperature gradient, and surface tension are sufficient so that the gas is released from the mixture while the aerosol particles are transported along the temperature gradient within the chamber and so that at least some of the released gas within individual aerosol particles is retained as one or more bubbles encapsulated by liquid of the individual aerosol particles before reaching the semiconductor substrate surface; and impacting the semiconductor substrate surface with the aerosol particles having the gas bubbles encapsulated therein. 14. The method of claim 13 wherein the liquid of the aerosol particles consists of one or more compositions that are chemically inert relative to reaction with the semiconductor substrate surface. 15. The method of claim 13 wherein the liquid of the aerosol particles comprises one or more compositions that are chemically reactive with one or more materials along the semiconductor substrate surface. 16. The method of claim 13 wherein the liquid of the aerosol particles comprises water having one or more of hydrochloric acid, hydrofluoric acid, sulfuric acid, ammonium hydroxide, tetramethyl ammonium hydroxide, and tetraethyl ammonium hydroxide dissolved therein. 17. The method of claim 13 wherein the gas bubbles of the aerosol particles consist of one or more compositions that are chemically inert relative to reaction with the semiconductor substrate surface. 18. The method of claim 17 wherein said one or more compositions comprise one or more of nitrogen, argon, neon, helium, krypton and xenon. 19. The method of claim 13 wherein the gas bubbles of the aerosol particles comprise one or more compositions that react with one or more materials along the semiconductor substrate surface. 20. The method of claim 19 wherein said one or more compositions comprise one or more of H2, NF3, O2 and ozone. 21. The method of claim 19 wherein said one or more materials are comprised by contaminating particulates along the semiconductor substrate surface.
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이 특허에 인용된 특허 (8)
Rose Peter H. ; Sferlazzo Piero ; van der Heide Robert G., Aerosol surface processing.
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