초록 ▼

The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-conta

The present invention relates to the use of ternary nickel-containing metal alloys of the NiMR type (where M=Mo, W, Re or Cr, and R=B or P) deposited by an electroless process in semiconductor technology. In particular, the present invention relates to the use of these deposited ternary nickel-containing metal alloys as barrier material or as selective encapsulation material for preventing the diffusion and electromigration of copper in semiconductor components.

대표청구항 ▼

The invention claimed is: 1. A composition for the electroless deposition of ternary nickel-containing metal alloys of the formula NiMoP, comprising NiSO4×6H2O, succinic acid, NaH2PO2 and Na2MoO4, in aqueous solution, wherein the concentration of Na2MoO4 is from 1×10−3 to 3×10

The invention claimed is: 1. A composition for the electroless deposition of ternary nickel-containing metal alloys of the formula NiMoP, comprising NiSO4×6H2O, succinic acid, NaH2PO2 and Na2MoO4, in aqueous solution, wherein the concentration of Na2MoO4 is from 1×10−3 to 3×10−2 mol/l. 2. The composition according to claim 1, wherein the concentration of NiSO4×6H2O is 0.02 to 0.1 mol/l. 3. The composition according to claim 1, wherein the concentration of NaH2PO2 is 0.1 to 0.5 mol/l. 4. The composition according to claim 1 having a pH in the range 4.5-9.0. 5. The composition according to claim 1, further comprising at least one additive selected from the group consisting of Na3C6H5O7×2H2O, C4H6O4, Na2C4H4O4×6H2O, 2,2-bipyridines, thiodiacetic acid, polyoxyethylene octylphenylether, dimethylaminoborane, Na2C2H3O2, C3H6O3 (90%), (NH4)2SO4 and sodium polyoxyethylene phenyletherphosphate. 6. The composition according to claim 1, wherein the NaH2PO2 is present in an amount of 0.1 to 0.5 mol/l. 7. The composition according to claim 1, wherein the NiSO4×6H2O is present in an amount of 0.02 to 0.1 mol/l. 8. The composition according to claim 1, wherein the NiSO4×6H2O is present in an amount of 0.02-0.1 mol/l, the NaH2PO2 is present in an amount of 0.1-0.5 mol/l, and the succinic acid is present in an amount of 0.01-0.2 mol/l. 9. The composition according to claim 1, further comprising dimethylaminoborane in an amount of 0.004-0.15 mol/l. 10. A composition in the form of an aqueous solution for the electroless deposition of ternary nickel-containing metal alloys of the formula NiWP, wherein the composition comprises: NiSO4×6H2O; NaH2PO2; succinic acid; Na2WO4; and water; wherein the Na2WO4 is present in an amount of from 0.001 to 0.14 mol/l. 11. The composition according to claim 10, comprising NiSO4×6H2O in amount of 0.02 to 0.1 mol/l. 12. The composition according to claim 11, comprising NaH2PO2 in an amount of 0.1 to 0.5 mol/l. 13. The composition according to claim 10 having a pH in the range of from 4.5 to 9.0. 14. The composition according to claim 10, further comprising at least one additive selected from the group consisting of Na3C6H5O7×2H2O, C4H6O4, Na2C4H4O4×6H2O, 2,2-bipyridines, thiodiacetic acid, polyoxyethylene octylphenylether, dimethylaminoborane, Na2C2H3O2, C3H6O3 (90%), (NH4)2SO4 and sodium polyoxyethylene phenyletherphosphate. 15. The composition according to claim 10, wherein the NiSO4×6H2O is present in an amount of 0.02-0.1 mol/l, the NaH2PO2 is present in an amount of 0.1-0.5 mol/l, and the succinic acid is present in an amount of 0.01-0.2 mol/l. 16. The composition according to claim 15, further comprising dimethylaminoborane in an amount of 0.004-0.15 mol/l. 17. A composition in the form of an aqueous solution for the electroless deposition of ternary nickel-containing metal alloys of the formula NiReP, wherein the composition comprises: NiSO4×6H2O; NaH2PO2; succinic acid; KReO4; and water; wherein the KReO4 is present in an amount of from 0.001 to 0.01 mol/l or less. 18. The composition according to claim 17, comprising NiSO4×6H2O in amount of 0.03 to 0.1 mol/l. 19. The composition according to claim 18, comprising NaH2PO2 in an amount of 0.2 to 0.5 mol/l. 20. The composition according to claim 17 having a pH in the range of from 4.5 to 9.0. 21. The composition according to claim 17, further comprising at least one additive selected from the group consisting of Na3C6H5O7×2H2O, C4H6O4, Na2C4H4O4×6H2O, 2,2-bipyridines, thiodiacetic acid, polyoxyethylene octylphenylether, dimethylaminoborane, Na2C2H3O2, C3H6O3 (90%), (NH4)2SO4 and sodium polyoxyethylene phenyletherphosphate. 22. The composition according to claim 17, wherein the NiSO4×6 H2O is present in an amount of 0.03-0.1 mol/l, the NaH2PO2 is present in an amount of 0.2-0.5 mol/l, and the succinic acid is present in an amount of 0.01-0.2 mol/l. 23. The composition according to claim 22, further comprising dimethylaminoborane in an amount of 0.004-0.15 mol/l. 24. A process for the production of an electrically conductive structure as a barrier layer, comprising: electrolessly depositing the composition of claim 1 to form a combined diffusion barrier and nucleation layer of NiMoP on a catalytically activated insulating layer (i) beneath a metal interconnect, and/or (ii) as an encapsulation barrier on a surface of the metal interconnect, wherein the metal interconnect consists of at least one metal selected from the group consisting of Cu, Ag, Co, Ni, Pd and Pt, and wherein, as refractory metal, molybdenum is present in the electrolessly deposited layer in an amount of from 3 to 24 atomic %. 25. The process according to claim 24, wherein the metal interconnect consists of copper. 26. The process according to claim 24, wherein the composition is a solution which is essentially free from surface-active substances. 27. The process according to claim 26, wherein the composition is a solution which comprises at least one anionic or non-ionic surfactant. 28. The process according to claim 26, wherein the composition is a solution which comprises one or more stabilisers. 29. The process according to claim 24, further comprising: cleaning and activating of the surface of the interconnect with an ammonia- and hydrofluoric acid-free solution. 30. The process according to claim 24, wherein the insulating layer is catalytically activated with Pd. 31. A process for the production of an electrically conductive structure as a barrier layer, comprising: electrolessly depositing the composition of claim 10 to form a combined diffusion barrier and nucleation layer of NiWP on a catalytically activated insulating layer (i) beneath a metal interconnect, and/or (ii) as an encapsulation barrier on a surface of the metal interconnect, wherein the metal interconnect consists of at least one metal selected from the group consisting of Cu, Ag, Co, Ni, Pd and Pt, and wherein, as refractory metal, tungsten is present in the electrolessly deposited layer in an amount of from 5 to 15 atomic %. 32. The process according to claim 31, wherein the metal interconnect consists of copper. 33. The process according to claim 31, wherein the composition is a solution which is essentially free from surface-active substances. 34. The process according to claim 33, wherein the composition is a solution which comprises at least one anionic or non-ionic surfactant. 35. The process according to claim 33, wherein the composition is a solution which comprises one or more stabilisers. 36. The process according to claim 31, further comprising: cleaning and activating of the surface of the interconnect with an ammonia- and hydrofluoric acid-free solution. 37. The process according to claim 31, wherein the insulating layer is catalytically activated with Pd. 38. A process for the production of an electrically conductive structure as a barrier layer, comprising: electrolessly depositing the composition of claim 17 to form a combined diffusion barrier and nucleation layer of NiReP on a catalytically activated insulating layer (i) beneath a metal interconnect, and/or (ii) as an encapsulation barrier on a surface of the metal interconnect, wherein the metal interconnect consists of at least one metal selected from the group consisting of Cu, Ag, Co, Ni, Pd and Pt, and wherein, as refractory metal, rhenium is present in the electrolessly deposited layer in an amount of from 2 to 23 atomic %. 39. The process according to claim 38, wherein the metal interconnect consists of copper. 40. The process according to claim 38, wherein the composition is a solution which is essentially free from surface-active substances. 41. The process according to claim 40, wherein the composition is a solution which comprises at least one anionic or non-ionic surfactant. 42. The process according to claim 40, wherein the composition is a solution which comprises one or more stabilisers. 43. The process according to claim 38, further comprising: cleaning and activating of the surface of the interconnect with an ammonia- and hydrofluoric acid-free solution. 44. The process according to claim 38, wherein the insulating layer is catalytically activated with Pd.