초록 ▼

A temperature sensor, in accordance with the principles of the invention comprises a silicon substrate. The silicon substrate includes a bandgap, an offset circuit for providing calibration offsets, and a gain block for providing an output that varies substantially linearly with changes in temperatu

A temperature sensor, in accordance with the principles of the invention comprises a silicon substrate. The silicon substrate includes a bandgap, an offset circuit for providing calibration offsets, and a gain block for providing an output that varies substantially linearly with changes in temperature of the substrate.

대표청구항 ▼

What is claimed is: 1. A temperature sensor, comprising: a bandgap circuit comprising a first transistor and a second transistor, wherein the first transistor includes a terminal configured to have a voltage indicative of a temperature of a substrate; a gain circuit comprising first and second inpu

What is claimed is: 1. A temperature sensor, comprising: a bandgap circuit comprising a first transistor and a second transistor, wherein the first transistor includes a terminal configured to have a voltage indicative of a temperature of a substrate; a gain circuit comprising first and second input terminals and configured to provide an output that varies substantially linearly with changes in the temperature of the substrate, wherein the first input terminal is coupled to the terminal of the first transistor such that a voltage of the first input terminal is proportional to the voltage of the terminal of the first transistor; and an offset circuit coupled to the second input terminal of the gain circuit, to the terminal of the first transistor, and to a terminal of the second transistor, wherein the offset circuit is configured to output an offset voltage to the second input terminal of the gain circuit, and wherein the offset voltage is proportional to a difference between the voltage of the terminal of the first transistor and a voltage of the terminal of the second transistor. 2. The temperature sensor of claim 1, wherein the bandgap circuit further comprises a first amplifier, and wherein the gain circuit further comprises a second amplifier. 3. The temperature sensor of claim 2, wherein the first amplifier comprises an output terminal, and wherein the output terminal is coupled to the second amplifier. 4. The temperature sensor of claim 3, wherein the first amplifier further comprises a first input terminal and a second input terminal, wherein the first transistor is coupled to the first input terminal of the first amplifier, and wherein the second transistor is coupled to the second input terminal of the first amplifier. 5. The temperature sensor of claim 4, wherein a voltage at the output terminal is proportional to a voltage differential between the first input terminal of the first amplifier and the second input terminal of the first amplifier. 6. The temperature sensor of claim 5, wherein the output terminal is coupled to the offset circuit such that a voltage at an input terminal of the offset circuit is substantially equal to the voltage at the output terminal. 7. The temperature sensor of claim 1, wherein the offset circuit comprises a voltage divider. 8. A temperature sensor, comprising: a bandgap circuit comprising a first transistor and a second transistor; a gain circuit comprising first and second input terminals and configured to provide an output that varies substantially linearly with changes in the temperature of a substrate, wherein the first input terminal of the gain circuit is coupled to the first transistor; and an offset circuit coupled to the second input terminal of the gain circuit, to the first transistor, and to the second transistor such that the offset circuit provides a offset voltage to the second input terminal of the gain circuit that is proportional to a voltage differential between the first transistor and the second transistor. 9. The temperature sensor of claim 8, wherein the bandgap circuit further comprises a first amplifier, and wherein the gain circuit further comprises a second amplifier. 10. The temperature sensor of claim 9, wherein the first amplifier is coupled to the first and second transistors and comprises a first amplifier output terminal that is coupled to the offset circuit. 11. The temperature sensor of claim 10, wherein a voltage of a first transistor terminal of the first transistor is configured to be indicative of a temperature of a substrate of the bandgap circuit, and wherein the first input terminal of the gain circuit is coupled to the first transistor terminal such that a voltage of the first input terminal is configured to be indicative of the temperature of the substrate. 12. The temperature sensor of claim 11, wherein the second amplifier comprises first and second input terminals and a second amplifier output terminal, wherein the first and second input terminals of the second amplifier are differential inputs and a voltage of the second amplifier output terminal is configured to be indicative of the difference between a voltage of the first input terminal of the second amplifier and a voltage of the second input terminal of the second amplifier. 13. A temperature sensor, comprising: a bandgap circuit comprising a first transistor and a second transistor, wherein the first transistor includes an output configured to be indicative of a temperature of a substrate at a first terminal; an offset circuit connected to the first terminal of the first transistor and to a terminal of the second transistor via a first resistive path, wherein the offset circuit is configured to output an offset voltage proportional to a difference between a voltage of the first transistor and a voltage of the second transistor; and a gain circuit comprising first and second input terminals, wherein the first input terminal of the gain circuit is connected to the terminal of the first transistor via a second resistive path and the second input terminal of the gain circuit is connected to the offset circuit via a third resistive path. 14. The temperature sensor of claim 13, wherein the second resistive path comprises a buffer, wherein the emitter of the first transistor is connected to the buffer, and wherein the first input terminal of the gain circuit is connected to the buffer. 15. The temperature sensor of claim 13, wherein the offset circuit is further connected to the emitter of the first transistor and to an emitter of the second transistor via the first resistive path. 16. A temperature sensor, comprising: a bandgap circuit comprising a first transistor and a second transistor, wherein the first transistor includes a terminal configured to have a voltage indicative of a temperature of a substrate; a gain circuit comprising first and second input terminals and configured to provide an output that varies substantially linearly with changes in the temperature of the substrate, wherein the first input terminal is connected to the terminal of the first transistor; and an offset circuit connected to the second input terminal of the gain circuit, to the terminal of the first transistor, and to a terminal of the second transistor, wherein the offset circuit is configured to output an offset voltage to the second input terminal of the gain circuit, and wherein the offset voltage is proportional to a difference between the voltage of the terminal of the first transistor and a voltage of the terminal of the second transistor.