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A step of forming wiring using first solution ejection means for ejecting a conductive material, a step of forming a resist mask on the wiring using second solution ejection means, and a step of etching the wiring using an atmospheric-pressure plasma device having linear plasma generation means or a

A step of forming wiring using first solution ejection means for ejecting a conductive material, a step of forming a resist mask on the wiring using second solution ejection means, and a step of etching the wiring using an atmospheric-pressure plasma device having linear plasma generation means or an atmospheric-pressure plasma device having a plurality of linearly-arranged plasma-generation-means using the resist mask as a mask are included.

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The invention claimed is: 1. A method for producing a semiconductor device comprising: forming wiring by ejecting a first solution comprising a conductive material using a first solution ejector having solution ejection ports arranged in a cluster-pattern with moving the first solution ejector, for

The invention claimed is: 1. A method for producing a semiconductor device comprising: forming wiring by ejecting a first solution comprising a conductive material using a first solution ejector having solution ejection ports arranged in a cluster-pattern with moving the first solution ejector, forming a resist mask by ejecting a second solution comprising a resist material on the wiring using a second solution ejector having solution ejection ports arranged in a cluster-pattern with moving the second solution ejector, and etching the wiring using an atmospheric-pressure plasma device having a linear plasma generator using the resist mask as a mask by generating plasma between a first electrode of the linear plasma generator and a second electrode surrounding the first electrode of the linear plasma generator, wherein at least the first electrode has a sheet-like shape. 2. The method for producing the semiconductor device in claim 1, wherein when the first solution is ejected using the first solution ejector, a substrate is heated. 3. The method for producing the semiconductor device in claim 1, wherein when the second solution is ejected using the second solution ejector, a substrate is heated. 4. The method for producing the semiconductor device in claim 1, wherein each of the first solution ejector and the second solution ejector has three ejection ports forming a triangle. 5. A method for producing a semiconductor device comprising: forming wiring, forming a resist mask at least on the wiring by ejecting a solution comprising a resist material using a solution ejector having solution ejection ports arranged in a cluster-pattern with moving the solution ejector, and etching the wiring using an atmospheric-pressure plasma device having a linear plasma generator using the resist mask as a mask by generating plasma between a first electrode of the linear plasma generator and a second electrode surrounding the first electrode of the linear plasma generator, wherein at least the first electrode has a sheet-like shape. 6. The method for producing the semiconductor device in any one of claim 1 and claim 5, wherein the etching and/or ashing are/is processed at the atmospheric pressure or near-atmospheric pressure. 7. The method for producing the semiconductor device in claim 5, wherein when the solution is ejected using the solution ejector, a substrate is heated. 8. The method for producing the semiconductor device in claim 5, wherein the solution ejector has three ejection ports forming a triangle. 9. A method for producing a semiconductor device comprising: forming wiring by ejecting a first solution comprising a conductive material using a first solution ejector having solution ejection ports arranged in a cluster-pattern with moving the first solution ejector, forming a resist mask by ejecting a second solution comprising a resist material on the wiring using a second solution ejector having solution ejection ports arranged in a cluster-pattern with moving the second solution ejector, and etching the wiring using an atmospheric-pressure plasma device having a plurality of linearly-arranged plasma generators using the resist mask as a mask by generating plasma between a first electrode of the linear plasma generator and a second electrode surrounding the first electrode of each of the plurality of linearly-arranged plasma generators, wherein each of the first solution ejector and the second solution ejector has three ejection ports forming a triangle. 10. The method for producing the semiconductor device in claim 9, wherein when the first solution is ejected using the first solution ejector, a substrate is heated. 11. The method for producing the semiconductor device in claim 9, wherein when the second solution is ejected using the second solution ejector, a substrate is heated. 12. A method for producing a semiconductor device comprising: forming wiring by ejecting a solution comprising a conductive material using a solution ejector having solution ejection ports arranged in a cluster-pattern with moving the solution ejector, forming a resist mask at least on the wiring, and etching the wiring using an atmospheric-pressure plasma device having a plurality of linearly-arranged plasma generators using the resist mask as a mask by generating plasma between a first electrode of the linear plasma generator and a second electrode surrounding the first electrode of each of the plurality of linearly-arranged plasma generators, wherein the solution ejector has three ejection ports forming a triangle. 13. A method for producing a semiconductor device comprising: forming wiring, forming a resist mask at least on the wiring by ejecting a solution comprising a resist material using a solution ejector having solution ejection ports arranged in a cluster-pattern with moving the solution ejector, and etching the wiring using an atmospheric-pressure plasma device having a plurality of linearly-arranged plasma generators using the resist mask as a mask by generating plasma between a first electrode of the linear plasma generator and a second electrode surrounding the first electrode of each of the plurality of linearly-arranged plasma generators, wherein the solution ejector has three ejection ports forming a triangle. 14. The method for producing the semiconductor device in any one of claim 9 to claim 13, wherein the etching is processed at the atmospheric pressure or near-atmospheric pressure. 15. The method for producing the semiconductor device in claim 9 or 13, wherein when the solution is ejected using the solution ejector, a substrate is heated.