초록 ▼

Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked

Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.

대표청구항 ▼

What is claimed is: 1. A method of fabricating an integrated circuit memory cell, comprising:forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening onto an ohmic layer stacked on a conductive structure, wherein an upper portion of the electrode is fo

What is claimed is: 1. A method of fabricating an integrated circuit memory cell, comprising:forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening onto an ohmic layer stacked on a conductive structure, wherein an upper portion of the electrode is formed from a different material having a greater resistivity than a lower portion of the electrode, the upper portion of the electrode having a ring shape;forming an insulation filling member that at least partially fills an interior of the lower electrode; andforming a variable resistivity material on the insulation filling member and electrically connected to the ring shaped upper of the electrode, wherein the ring shaped upper portion is between the lower portion and the variable resistivity material,wherein forming an insulation filling member comprises:forming a silicon layer that at least partially fills an interior of the electrode; andintroducing nitrogen into an upper portion of the silicon layer in the interior of the electrode to form a silicon nitride layer that serves as the insulation filling member.