초록 ▼

An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth

An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO2) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.

대표청구항 ▼

The invention claimed is: 1. A method for forming an interface between a silicon carbide layer and a silicon oxide layer of a structure designed to conduct current, said method comprising:homo-epitaxially growing a first epitaxial layer having a first doping level;homo-epitaxially growing, on said f

The invention claimed is: 1. A method for forming an interface between a silicon carbide layer and a silicon oxide layer of a structure designed to conduct current, said method comprising:homo-epitaxially growing a first epitaxial layer having a first doping level;homo-epitaxially growing, on said first epitaxial layer, a second epitaxial layer having a second doping level higher than said first doping level; andoxidizing said second epitaxial layer and forming a silicon oxide layer that comprises a layer interface between the first epitaxial layer and the silicon oxide layer.