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[미국특허] Method for manufacturing magnetoresistance effect element 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11B-021/00
출원번호 US-0703830 (2007-02-08)
등록번호 US7897201 (2011-02-15)
우선권정보 JP-2006-2006-032261(2006-02-09)
발명자 / 주소
  • Yuasa, Hiromi
  • Fukuzawa, Hideaki
  • Fuji, Yoshihiko
  • Iwasaki, Hitoshi
출원인 / 주소
  • Kabushiki Kaisha Toshiba
대리인 / 주소
    Nixon & Vanderhye, PC
인용정보 피인용 횟수 : 7  인용 특허 : 82

초록 ▼

A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magn

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer which are sequentially stacked, the method comprising:forming at least a part of either one of the magnetization

이 특허에 인용된 특허 (82) 인용/피인용 타임라인 분석

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