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An improved process for producing a silicon carbide ceramic micro tubes (SiC micro tube) from a silicon-based polymer fiber by applying an ionizing radiation such that the surface part of the fiber selectively undergoes oxidative crosslinking, extracting the uncrosslinked core part of the fiber with

An improved process for producing a silicon carbide ceramic micro tubes (SiC micro tube) from a silicon-based polymer fiber by applying an ionizing radiation such that the surface part of the fiber selectively undergoes oxidative crosslinking, extracting the uncrosslinked core part of the fiber with an organic solvent to form a hollow fiber, and firing it in an inert gas is characterized by using a polymer blend of polycarbosilane and polyvinylsilane as the silicon polymer or applying the ionizing radiation to the silicon-based polymer fiber as it is cooled. The two methods may be performed either individually or in combination to produce tubes with their wall thickness controlled at a desired value in the range of 2-10 μm although this has been impossible to achieve in the prior art.

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What is claimed is: 1. A process for producing a silicon carbide ceramic micro tube (SiC micro tube), comprising:applying an electron beam radiation to a silicon-based polymer blend fiber consisting of polycarbosilane and polyvinylsilane under an oxygen atmosphere such that its surface selectively u

What is claimed is: 1. A process for producing a silicon carbide ceramic micro tube (SiC micro tube), comprising:applying an electron beam radiation to a silicon-based polymer blend fiber consisting of polycarbosilane and polyvinylsilane under an oxygen atmosphere such that its surface selectively undergoes oxidative crosslinking, wherein the amount of polyvinylsilane is 5 wt % to less than 30 wt %, wherein the temperature of the fiber during radiation is 50° C. or below;removing the uncrosslinked central portion of the fiber with an organic solvent to make a hollow fiber; andfiring the hollow fiber in an inert gas, whereinthe micro tube has a wall thickness of no more than 5 μm, andheat treatment is not conducted between the applying an electron beam radiation and the removing of the uncrosslinked central portion.