초록 ▼

A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjus

A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.

대표청구항 ▼

What is claimed is: 1. A method of preparing a porous low dielectric constant (low-k) film on a substrate, comprising:forming a low-k dielectric film on a substrate, wherein said low-k dielectric film as-formed on said substrate comprises a structure-forming material and a cross-linking inhibitor;ex

What is claimed is: 1. A method of preparing a porous low dielectric constant (low-k) film on a substrate, comprising:forming a low-k dielectric film on a substrate, wherein said low-k dielectric film as-formed on said substrate comprises a structure-forming material and a cross-linking inhibitor;exposing said low-k dielectric film to infrared (IR) radiation to remove at least part of said cross-linking inhibitor, wherein said exposing to said IR radiation occurs prior to any exposure of said low-k dielectric film to ultraviolet (UV) radiation, and said IR radiation contains substantially monochromatic electromagnetic (EM) radiation having a narrow band of wavelengths;selecting one or more IR properties of said exposing said low-k dielectric film to infrared (IR) radiation to adjust a residual amount of said cross-linking inhibitor remaining in said low-k dielectric film in order to tune a mechanical property of said low-k dielectric film, an electrical property of said low-k dielectric film, an optical property of said low-k dielectric film, a pore size of said low-k dielectric film, or a porosity of said low-k dielectric film, or a combination of two or more thereof;exposing said low-k dielectric film to ultraviolet (UV) radiation following said exposing said low-k dielectric film to infrared (IR) radiation; andexposing said low-k dielectric film to second IR radiation during said exposing said low-k dielectric film to ultraviolet (UV) radiation.