초록 ▼

One of methods of manufacturing a semiconductor device of the present invention is as follows: a first conductive layer is formed, a first insulating layer is formed over the first conductive layer, and a second insulating layer is formed over the first insulating layer; then, a first opening portio

One of methods of manufacturing a semiconductor device of the present invention is as follows: a first conductive layer is formed, a first insulating layer is formed over the first conductive layer, and a second insulating layer is formed over the first insulating layer; then, a first opening portion is formed in the first insulating layer and the second insulating layer to reach the first conductive layer; a mask layer having low wettability to a composition containing a conductive material is formed over the second insulating layer, and a second opening portion larger than the first opening portion is formed in the second insulating layer; subsequently, the first and second opening portions are filled with the composition containing a conductive material to form a second conductive layer.

대표청구항 ▼

What is claimed is: 1. A method of manufacturing a semiconductor device, comprising:forming a conductive layer over a substrate;forming a first insulating layer over the conductive layer;forming a second insulating layer over the first insulating layer;forming a first mask layer having a first openi

What is claimed is: 1. A method of manufacturing a semiconductor device, comprising:forming a conductive layer over a substrate;forming a first insulating layer over the conductive layer;forming a second insulating layer over the first insulating layer;forming a first mask layer having a first opening portion over the second insulating layer;forming a second opening portion reaching the conductive layer in the first insulating layer and the second insulating layer by etching the first insulating layer and the second insulating layer by use of the first mask layer;removing the first mask layer;forming a second mask layer over the second insulating layer after removing the first mask layer, the second mask layer having a third opening portion having a larger area than the second opening portion and having a surface with lower wettability than the second insulating layer with respect to a liquid composition containing a conductive material;forming a fourth opening portion in the second insulating layer, the fourth opening portion having a larger area than the second opening portion and overlapping with the second opening portion by etching the second insulating layer by use of the second mask layer;discharging the liquid composition containing the conductive material in the second and fourth opening portions by use of the second mask layer; andremoving the second mask layer after discharging the liquid composition containing the conductive material in the second and fourth opening portions.