초록 ▼

A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer of second material is over the

A diode comprises a substrate formed of a first material having a first doping polarity. The substrate has a planar surface and at least one semispherical structure extending from the planar surface. The semispherical structure is formed of the first material. A layer of second material is over the semispherical structure. The second material comprises a second doping polarity opposite the first doping polarity. The layer of second material conforms to the shape of the semispherical structure. A first electrical contact is connected to the substrate, and a second electrical contact is connected to the layer of second material. Additional semiconductor structures are formed by fabricating additional layers over the original layers.

대표청구항 ▼

What is claimed is: 1. An integrated circuit structure comprising:a substrate comprising a first material having a first doping polarity, said substrate having a planar surface and at least one semispherical structure extending from said planar surface, said semispherical structure comprising said f

What is claimed is: 1. An integrated circuit structure comprising:a substrate comprising a first material having a first doping polarity, said substrate having a planar surface and at least one semispherical structure extending from said planar surface, said semispherical structure comprising said first material;a layer of second material over said semispherical structure, said second material comprising a second doping polarity opposite said first doping polarity, said layer of second material conforming to the shape of said semispherical structure;a first electrical contact connected to said substrate; anda second electrical contact connected to said layer of second material.