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특허 상세정보

Temperature detection for a semiconductor component

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) G01K-007/01   
미국특허분류(USC) 374/170; 374/178; 374/184; 374/185; 374/171; 374/172; 324/76201; 257/470
출원번호 US-0964116 (2007-12-26)
등록번호 US7988354 (2011-07-18)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Dicke, Billig & Czaja, PLLC
인용정보 피인용 횟수 : 9  인용 특허 : 16
초록

Temperature detection for a semiconductor component is disclosed. One embodiment includes a circuit arrangement for measuring a junction temperature of a semiconductor component that has a gate electrode and a control terminal being connected to the gate electrode and receiving a control signal for charging and discharging the gate electrode, where the gate electrode is internally connected to the control terminal via an internal gate resistor. The circuit arrangement includes: a measuring bridge circuit including the internal gate resistor and providing...

대표
청구항

What is claimed is: 1. A circuit arrangement for measuring a junction temperature of a semiconductor component that has a gate electrode and a control terminal being connected to the gate electrode and receiving a control signal for charging and discharging the gate electrode, the gate electrode being internally connected to the control terminal via an internal gate resistor, the circuit arrangement comprising:a measuring bridge circuit comprising the internal gate resistor and providing a measuring voltage which is dependent on the temperature dependent...

이 특허에 인용된 특허 (16)

  1. Nesler John J. (Los Angeles CA). Base drive circuit. USP1984024430608.
  2. Kapsokavathis Nick S. (Shelby Township ; Utica County MI) Wright Carl D. (Noblesville IN) Sanders Stephen P. (Millington MI) Johnson Nick M. (Los Altos CA) Cheah Chun F. (San Francisco CA). Capacitive fuel composition sensor with slow oscillator and high speed switch. USP1993075231358.
  3. He Jin ; Jacobs Mark E.. Current-sharing circuit for parallel-coupled switches and switch-mode power converter employing the same. USP1999065909108.
  4. Terasawa Noriho,JPX. Drive circuit for power device. USP2001046215634.
  5. Noftsker Russell (Woodland Hills CA) Mathews James Kirk (Van Nuys CA). Electrical operating circuit having semiconductor device junction temperature monitoring. USP1977084039928.
  6. Pelly Brian R.. Instantaneous junction temperature detection. USP2000056060792.
  7. Kumagai Naoki,JPX ; Ueno Katsunori,JPX. Insulated-gate controlled semiconductor device. USP1998125844760.
  8. Dolian,Krikor M.. Method for testing power MOSFET devices. USP2008077397264.
  9. Kase Kiyoshi (Chiba JPX). Overcurrent sense circuit. USP1996095559500.
  10. Yoshifumi Tomomatsu JP. Power semiconductor device with temperature detector. USP2002116486523.
  11. Kistner, Michael; Dillig, Reinhold; Raith, Sebastian; Loddenkoetter, Manfred; Bayerer, Reinhold. Power semiconductor module. USP2004126835994.
  12. Wittenberg, John W.. Surge limiting circuit with optional short circuit detection. USP2004126831447.
  13. Begehr Dieter (Oststeinbek DEX) Keitel Gerd (Ahrensburg DEX) Burmeister Rainer (Hamburg DEX). Temperature measuring arrangement. USP1989054830514.
  14. Hasegawa Hiroyuki,JPX ; Kurosu Toshiki,JPX ; Sugayama Shigeru,JPX. Temperature sensing circuit for voltage drive type semiconductor device and temperature sensing method therefore, and drive-device and voltage drive type semiconductor device using the same. USP2001096288597.
  15. Sobhani Saed ; Kinzer Daniel M.. Tempsense FET with implanted line of diodes (EPS). USP2000106133616.
  16. Hashimoto Yukio (Tokorozawa JPX). Voltage control circuit responsive to FET propagation time. USP1982114358728.