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Hafnium lanthanide oxynitride films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
출원번호 US-0505963 (2009-07-20)
등록번호 US7989362 (2011-07-18)
발명자 / 주소
  • Forbes, Leonard
  • Ahn, Kie Y.
  • Bhattacharyya, Arup
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg & Woessner, P.A.
인용정보 피인용 횟수 : 0  인용 특허 : 263

초록 ▼

Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a diele

대표청구항

What is claimed is: 1. A method comprising:forming a dielectric including HfLnON, the dielectric formed on a substrate of an electronic device.

이 특허에 인용된 특허 (263)

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