초록 ▼

A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, whi

A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising:a substrate;a semiconductor film formed on and in contact with an insulating layer over the substrate;a first insulating film on the semiconductor film;a gate electrode over the first insulating film;a metal-silicide film on the gate electrode

What is claimed is: 1. A semiconductor device comprising:a substrate;a semiconductor film formed on and in contact with an insulating layer over the substrate;a first insulating film on the semiconductor film;a gate electrode over the first insulating film;a metal-silicide film on the gate electrode;a side wall insulator on a side surface of the gate electrode; anda second insulating film in contact with the side wall insulator and an upper surface of the metal-silicide film,wherein a thickness of the first insulating film is 2 to 6 nm, andwherein a bottom surface of the side wall insulator is in contact with an upper surface of the first insulating film.