초록 ▼

A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article inc

A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

대표청구항 ▼

We claim: 1. A bulk ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing, where said bulk ceramic article formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concent

We claim: 1. A bulk ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing, where said bulk ceramic article formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole % to produce a bulk solid-solution-containing ceramic.