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Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating appar

Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

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What is claimed is: 1. A method of calibrating a temperature control system, comprising:providing a heating apparatus configured to heat a semiconductor processing chamber;providing a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;providi

What is claimed is: 1. A method of calibrating a temperature control system, comprising:providing a heating apparatus configured to heat a semiconductor processing chamber;providing a temperature sensor configured to generate a signal indicative of a temperature within the processing chamber;providing a temperature control system configured to control the heating apparatus based on the signal from the temperature sensor;varying a thickness of a layer of material in the processing chamber;measuring, while varying the layer thickness, a variation of a property of the layer having a cyclical variation as a thickness of the layer varies;measuring a cycle time period of the cyclical variation of the property; andadjusting the temperature control system based on the measured cycle time period.