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Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/06
출원번호 US-0823860 (2007-06-28)
등록번호 US8063397 (2011-11-07)
발명자 / 주소
  • Mori, Michael J.
  • Fitzgerald, Eugene A.
출원인 / 주소
  • Massachusetts Institute of Technology
대리인 / 주소
    Wolf, Greenfield & Sacks, P.C.
인용정보 피인용 횟수 : 9  인용 특허 : 33

초록 ▼

Semiconductor light-emitting structures are shown on engineered substrates having a graded composition. The composition of the substrate may be graded to achieve a lattice constant on which a yellow-green light-emitting semiconductor material may be disposed. In some embodiments, the structure may b

대표청구항 ▼

What is claimed is: 1. A device for emitting light, the device comprising:a substrate comprising a first region, the first region having a graded composition of GaAsP such that a lattice constant of the first region varies within the first region, the graded composition being graded along a thicknes

이 특허에 인용된 특허 (33)

  1. Francois J. Henley ; Michael A. Brayan ; William G. En, Cleaving process to fabricate multilayered substrates using low implantation doses.
    상세보기
  2. Ismail Khaled E. (Cairo NY EGX) Stern Frank (Pleasantville NY), Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers.
    상세보기
  3. Francois J. Henley ; Nathan W. Cheung, Controlled cleavage thin film separation process using a reusable substrate.
    상세보기
  4. Henley, Francois J.; Cheung, Nathan W., Controlled cleaving process.
    상세보기
  5. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.
    상세보기
  6. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.
    상세보기
  7. Matsumoto Takashi (Tokyo JPX), Epitaxial layer structure grown on graded substrate and method of growing the same.
    상세보기
  8. Nathan W. Cheung ; Francois J. Henley, Generic layer transfer methodology by controlled cleavage process.
    상세보기
  9. Henley, Francois J.; Cheung, Nathan W., Gettering technique for wafers made using a controlled cleaving process.
    상세보기
  10. Mawst Luke J. ; Botez Dan ; Al-Muhanna Abdulrahman ; Wade Jerome Kent, High performance aluminum free active region semiconductor lasers.
    상세보기
  11. Francois J. Henley ; Michael A. Bryan ; William G. En, High temperature implant apparatus.
    상세보기
  12. Legoues Francoise Kolmer ; Meyerson Bernard Steele, Low defect density/arbitrary lattice constant heteroepitaxial layers.
    상세보기
  13. Fitzgerald, Eugene A., Low threading dislocation density relaxed mismatched epilayers without high temperature growth.
    상세보기
  14. Fitzgerald, Eugene A., Low threading dislocation density relaxed mismatched epilayers without high temperature growth.
    상세보기
  15. Sukegawa Tokuzo (Hamamatsu JPX) Tadatomo Kazuyuki (Itami JPX), Material for light emitting element and method for crystal growth thereof.
    상세보기
  16. Brasen Daniel (Lake Hiawatha NJ) Fitzgerald ; Jr. Eugene A. (Bridgewater NJ) Green Martin L. (New Providence NJ) Xie Ya-Hong (Flemington NJ), Method for making low defect density semiconductor heterostructure and devices made thereby.
    상세보기
  17. Fitzgerald, Eugene A., Method of fabricating a relaxed silicon germanium platform having planarizing for high speed CMOS electronics and high speed analog circuits.
    상세보기
  18. Murthy, Anand; Soman, Ravindra; Boyanov, Boyan, Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer.
    상세보기
  19. Noguchi, Takashi; Soneda, Mitsuo, Method of forming n-and p- channel field effect transistors on the same silicon layer having a strain effect.
    상세보기
  20. Kim, Andrew Y.; Fitzgerald, Eugene A., Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates.
    상세보기
  21. Henley Francois J. ; Cheung Nathan W., Pre-semiconductor process implant and post-process film separation.
    상세보기
  22. Bruel Michel,FRX, Process for the manufacture of thin films of semiconductor material.
    상세보기
  23. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
    상세보기
  24. Takeshi Takagi JP, Semiconductor device.
    상세보기
  25. Nitta Koichi (Kawasaki) Ishikawa Masayuki (Tokyo) Nishikawa Yukie (Narashino) Sugawara Hideto (Tokyo) Watanabe Minoru (Tokyo) Okajima Masaki (Kawasaki) Hatakoshi Genichi (Yokohama JPX), Semiconductor device having an active layer made of InGaAlP material.
    상세보기
  26. Esaki Leo (Katonah NY) Chang Leroy L. (Goldens Bridge NY) Wang Wen-I (Putnam Valley NY), Semiconductor device with hole conduction via strained lattice.
    상세보기
  27. Brasen Daniel (Lake Hiawatha NJ) Fitzgerald ; Jr. Eugene A. (Bridgewater NJ) Green Martin L. (New Providence NJ) Monroe Donald P. (Berkeley Heights NJ) Silverman Paul J. (Millburn NJ) Xie Ya-Hong (Fl, Semiconductor heterostructure devices with strained semiconductor layers.
    상세보기
  28. Ramdani Jamal (Gilbert AZ) Lebby Michael S. (Apache Junction AZ) Grodzinski Piotr (Chandler AZ), Short wavelength VCSEL.
    상세보기
  29. Fitzergald, Eugene A., Silicon wafer with embedded optoelectronic material for monolithic OEIC.
    상세보기
  30. Srikrishnan Kris V., Smart-cut process for the production of thin semiconductor material films.
    상세보기
  31. Fitzgerald Eugene A. ; Samavedam Srikanth B., Utilization of miscut substrates to improve relaxed graded silicon-germanium and germanium layers on silicon.
    상세보기
  32. Yap, Daniel, Waveguide-bonded optoelectronic devices.
    상세보기
  33. McGill,Lisa; Fitzgerald,Eugene A., Yellow-green epitaxial transparent substrate-LEDs and lasers based on a strained-InGaP quantum well grown on an indirect bandgap substrate.
    상세보기

이 특허를 인용한 특허 (9)

  1. Fitzgerald, Eugene A.; Sharma, Prithu; Milakovich, Timothy, Controlling GaAsP/SiGe interfaces.
    상세보기
  2. Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark, High bandgap III-V alloys for high efficiency optoelectronics.
    상세보기
  3. Lee, Sang-hun; Park, Chang-young; Kwon, Jong-oh; Park, Yong-hwa, Infrared transmission large-area shutter.
    상세보기
  4. Mascarenhas, Angelo; Steiner, Myles A.; Bhusal, Lekhnath; Zhang, Yong, Lattice-mismatched GaInP LED devices and methods of fabricating same.
    상세보기
  5. Chen, Li-Yi; Lee, Hsin-Wei, Light-emitting diode and method for manufacturing the same.
    상세보기
  6. Beck, Markus Eberhard; Nagle, Timothy J.; Basu, Sourav Roger, Methods of forming thin-film photovoltaic devices with discontinuous passivation layers.
    상세보기
  7. Beck, Markus Eberhard; Nagle, Timothy J.; Basu, Sourav Roger, Methods of forming thin-film photovoltaic devices with discontinuous passivation layers.
    상세보기
  8. Beck, Markus Eberhard; Nagle, Timothy J.; Basu, Sourav Roger, Methods of forming thin-film photovoltaic devices with discontinuous passivation layers.
    상세보기
  9. Ye, Zhiyuan; Sanchez, Errol Antonio C.; Ban, Keun-Yong; Bao, Xinyu, Structure for relaxed SiGe buffers including method and apparatus for forming.
    상세보기

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