Plasma processing apparatus and semiconductor device manufactured by the same apparatus
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C23F-001/00
H01L-021/306
C23C-016/455
C23C-016/50
C23C-016/505
C23C-016/509
C23C-016/06
C23C-016/22
출원번호
US-0328461
(2006-01-10)
등록번호
US-8092640
(2012-01-10)
우선권정보
JP-2005-006598 (2005-01-13)
발명자
/ 주소
Kishimoto, Katsushi
Fukuoka, Yusuke
출원인 / 주소
Sharp Kabushiki Kaisha
대리인 / 주소
Nixon & Vanderhye P.C.
인용정보
피인용 횟수 :
1인용 특허 :
27
초록▼
A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-ano
A plasma processing apparatus of this invention includes a sealable chamber, a gas supply source of reactive material gas, placed outside the chamber, a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber, and a plurality of sets of cathode-anode bodies for forming a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber. Herein, the gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to each of the discharge spaces via the gas branch section. The branch pipes are configured so that conductances thereof are substantially equivalent to each other.
대표청구항▼
1. A plasma processing apparatus, comprising: a sealable chamber;a gas supply source of reactive material gas, placed outside the chamber;a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber;a plurality of sets of cathode-anode bodies configur
1. A plasma processing apparatus, comprising: a sealable chamber;a gas supply source of reactive material gas, placed outside the chamber;a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber;a plurality of sets of cathode-anode bodies configured to form a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber; anda gas supply section comprising the plurality of cathodes of the cathode-anode bodies in which each cathode is provided with a plurality of through holes for supplying the material gas to an object to be plasma-processed, whereinthe gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to the cathode-anode bodies via the gas branch section and each of the discharge spaces,the gas branch section includes a plurality of internal flow passages arranged to communicate the main pipe with the plurality of branch pipes,the plurality of internal flow passages are substantially equivalent in length with each other,each internal flow passage is a passage within the gas branch section between an end of the main pipe and an end of one of the plurality of branch pipes,the gas supply section is arranged opposite to the gas branch section connected by the branch pipes,each cathode of the cathode-anode bodies is placed opposite to a corresponding anode so that a corresponding discharge space is formed therebetween, andthe branch pipes are made of flexible material, are connected with cathodes of the cathode-anode bodies, and are configured so that lengths between the gas branch section and the cathodes are equivalent to each other, and flow conductances of the branch pipes are substantially equivalent to each other. 2. The plasma processing apparatus according to claim 1, wherein the gas branch section comprises a disk shaped body having the plurality of internal flow passages for communicating the main pipe with the plurality of branch pipes. 3. The plasma processing apparatus according to claim 2, wherein the disk shaped body comprises: a gas inlet port provided at the center portion of the disk shaped body to be communicated with the internal flow passages; anda plurality of gas outlet ports provided in a periphery portion of the disk shaped body so as to be communicated with the plurality of internal flow passages. 4. The plasma processing apparatus according to claim 1, wherein a number of the discharge spaces is two, a number of the cathode-anode bodies is two sets, and a number of the branch pipes is two. 5. The plasma processing apparatus according to claim 1, wherein a number of the discharge spaces is three, a number of the cathode-anode bodies is three sets, and a number of the branch pipes is three. 6. The plasma processing apparatus according to claim 1, wherein the gas introduction pipe has a part disposed at least in the chamber, being made of insulating material. 7. The plasma processing apparatus according to claim 1, wherein the gas introduction pipe has a part of the main pipe disposed in the chamber, being made of metal material, and the gas branch section is made of metal material. 8. The plasma processing apparatus according to claim 1, wherein the gas introduction pipe comprises a part disposed at least in the chamber, being made of heat resistance material. 9. The plasma processing apparatus according to claim 3, wherein the disk shaped body further comprises a plurality of closure members corresponding to the plurality of gas outlet ports, each closure member arranged to close the corresponding gas outlet port when the gas outlet port is not in communication with the corresponding internal flow passage. 10. The plasma processing apparatus according to claim 1, wherein the plurality of branch pipes are made of electrically insulating material. 11. The plasma processing apparatus according to claim 1, wherein each of the plurality of branch pipes is in communication with a corresponding cathode of the gas supply section, each branch pipe being arranged to supply the material gas to the corresponding cathode which in turn is arranged to supply the material gas to a corresponding discharge space. 12. The plasma processing apparatus according to claim 11, wherein the each cathode has at least one cavity disposed therein so that the material gas is introduced into the at least one cavity of the cathode and at least one through hole of the plurality of through holes in communication with the at least one cavity so that the material gas introduced into the at least one cavity is supplied to the corresponding discharge space via the at least one through hole. 13. The plasma processing apparatus according to claim 12, wherein the plurality of through holes are such that a diameter of each through hole is substantially in a range between 0.1 mm and 0.2 mm and a pitch between two through holes is substantially in a range between several mm to several cm. 14. The plasma processing apparatus according to claim 1, wherein the cathodes and the anodes are rectangular in shape. 15. The plasma processing apparatus according to claim 14, wherein dimensions of the cathodes and the anodes are substantially in a range 1000 to 1500 mm×600 to 1000 mm. 16. The plasma processing apparatus according to claim 14, wherein there are plural cathodes and each cathode faces a corresponding anode to form a corresponding discharge space therebetween. 17. The plasma processing apparatus according to claim 1, the number of cathodes and the number of discharge spaces are equal. 18. The plasma processing apparatus according to claim 1, wherein there is no flow conductance adjustment mechanism for any of the branch pipes. 19. The plasma processing apparatus according to claim 1, wherein no valves are separately provided on any of the branch pipes between the gas branch section and the gas supply section. 20. A plasma processing apparatus, comprising: a sealable chamber;a gas supply source of reactive material gas, placed outside the chamber;a gas introduction pipe connected to the gas supply source, for introducing the material gas into the chamber;a plurality of sets of cathode-anode bodies configured to form a plurality of discharge spaces which perform plasma discharge of the material gas in the chamber; anda gas supply section comprising the plurality of cathodes of the cathode-anode bodies in which each cathode is provided with a plurality of through holes for supplying the material gas to an object to be plasma-processed, whereinthe gas introduction pipe includes a gas branch section arranged in the chamber, a main pipe for connecting the gas supply source to the gas branch section, and a plurality of branch pipes connected from the main pipe to the cathode-anode bodies via the gas branch section and each of the discharge spaces,the gas branch section comprises a disk shaped body having a plurality of internal flow passages which communicate the main pipe with the plurality of branch pipes,the plurality of internal flow passages of the disk shaped body being substantially equivalent in length with each other,each internal flow passage being a passage within the disk shaped body between an end of the main pipe and an end of one of the plurality of branch pipes,the gas supply section is arranged opposite to the gas branch section connected by the branch pipes,each cathode of the cathode-anode bodies is placed opposite to a corresponding anode so that a corresponding discharge space is formed therebetween, andthe branch pipes are made of flexible material, are connected with cathodes of the cathode-anode bodies, and are configured so that flow conductances of the branch pipes are substantially equivalent to each other.
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