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A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of wea

A method of forming an epitaxially grown layer by forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness, epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; bonding the epitaxially grown layer to an acceptor substrate before detaching the remainder portion from the support portion; and detaching the remainder portion from the support portion at the region of weakness. The epitaxially grown layer may be removed from the support portion as a free-standing structure.

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1. A method of forming an epitaxially grown layer, which comprises: forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness;epitaxially growing an epitaxially grown layer on the support portion after forming

1. A method of forming an epitaxially grown layer, which comprises: forming a region of weakness in a support substrate to define a support portion and a remainder portion on opposite sides of the region of weakness;epitaxially growing an epitaxially grown layer on the support portion after forming the region of weakness but prior to detachment of the support portion from the remainder portion; anddetaching the remainder portion from the support portion at the region of weakness leaving the epitaxially grown layer on the support portion, wherein the materials and parameters of all steps preceding the detaching step are selected so that the cumulative energy budget supplied during all steps preceding the detaching step is less than an energy budget required for detachment of the remainder portion. 2. The method of claim 1 wherein the region of weakness is formed by implantation of atomic species including hydrogen ions in the support substrate in an amount sufficient to sufficiently weaken the region to facilitate detachment of the support portion from the remainder portion. 3. The method of claim 2, which further comprises detaching the remainder portion from the support portion at the region of weakness by supplying energy thereto. 4. The method of claim 3, wherein the energy supplied for the detachment includes heating or is of optical origin. 5. The method of claim 1, which further comprises removing the detached support portion to obtain the epitaxially grown layer. 6. The method of claim 1, wherein the epitaxially grown layer is grown directly on the support portion of the support substrate. 7. The method of claim 1, wherein the epitaxial layer is of a wide band-gap semiconductor material. 8. The method of claim 1, wherein the epitaxial layer is grown to a sufficient thickness to be self-supporting after separation from the support portion. 9. The method of claim 1 which further comprises providing an interposed layer upon the support portion prior to the epitaxially growing of the epitaxially grown layer, wherein the interposed layer comprises a nucleation portion selected and configured for improving conditions for the growing of the epitaxial layer thereon compared to the support substrate. 10. The method of claim 9, wherein the interposed layer comprises a plurality of layers. 11. The method of claim 1 wherein the epitaxially grown layer comprises GaN, wherein the supporting substrate comprises SiC, wherein the energy budget of the growing step comprises exposure temperatures between about 700 and 1100° C. and exposure times of several hours, and wherein the energy budget of the detaching step comprises exposure temperatures about 1300° C. and exposure times of about 2 hours. 12. The method of claim 1, which further comprises: forming a second region of weakness in a nucleation substrate to define a thin nucleation layer and a remainder portion of the nucleation substrate on opposite sides of the region of weakness,bonding the support and the nucleation substrates together;detaching the remainder portion of the nucleation substrate from the bonded substrates at the second region of weakness leaving the thin nucleation layer bonded to the surface of the support portion of the support substrate;wherein the bonding and detaching are conducted prior to the epitaxially growth of the epitaxially grown layer, wherein the epitaxially grown layer is grown on the thin nucleation layer after detachment of the remainder portion of the nucleation substrate but prior to detachment of the remainder portion of the support substrate; andthen detaching the remainder portion of the support substrate from the support portion at the region of weakness leaving the epitaxially grown material on the thin nucleation layer which is bonded to the support portion. 13. The method of claim 12, wherein the materials and parameters of all steps preceding the detachment of the remainder portion of the support substrate are selected so that an energy budget required for detachment of the remainder portion of the nucleation substrate is greater than the cumulative energy budget supplied during all steps preceding the detachment of the remainder portion of the support substrate. 14. The method of claim 13 wherein the nucleation substrate comprises Si, and wherein the first energy budget comprises exposure temperatures about 500° C. and exposure times of about 2 hours. 15. The method of claim 13 wherein the supporting substrate comprises SiC, and wherein the energy budget of the detaching step comprises exposure temperatures about 1300° C. and exposure times of about 2 hours. 16. The method of claim 13 wherein the epitaxially grown layer comprises a wide band-gap semiconductor material, and wherein the energy budget of the growing step comprises exposure temperatures between about 700 and 1100° C. and exposure times of several hours. 17. The method of claim 12, wherein the energy budget required for detachment of the remainder portion of the nucleation substrate is less than the energy budget required for detachment of the remainder portion from the support substrate. 18. The method of claim 12 further comprising eliminating the thin nucleation layer and the support portion of the support substrate from the epitaxially grown layer. 19. The method of claim 12 further comprising providing, prior to bonding, a bonding enhancing layer on the surface of the support substrate, or on the surface of the nucleation substrate, or on the surfaces of both substrates. 20. The method of claim 12 wherein the region of weakness in the nucleation substrate and in the support substrate are formed by implantation of atomic species.