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A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step

A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.

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1. A method for manufacturing a Group III nitride semiconductor, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on said substrate by a reactive sputtering method, whereinsaid sputtering step includes respective

1. A method for manufacturing a Group III nitride semiconductor, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on said substrate by a reactive sputtering method, whereinsaid sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, andthe Group III nitride semiconductor is formed by laminating said semiconductor thin film through alternate repetitions of said film formation step and said plasma treatment step. 2. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein said Mg-doped semiconductor thin film is formed with a thickness within a range of 1 to 100 nm in said film formation step, andthe Group III nitride semiconductor is formed by laminating said semiconductor thin film through alternate repetitions of the film formation step within the above range of film thickness and said plasma treatment step in said sputtering step. 3. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein said film formation step is performed while circulating a hydrogen-containing gas and/or a nitrogen-containing gas in said chamber. 4. The method for manufacturing a Group III nitride semiconductor according to claim 3, wherein said nitrogen-containing gas is an ammonia gas. 5. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein a temperature of said substrate is set within a range of 300° C to 1200° C in said film formation step. 6. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein a power for generating an inert gas plasma in said chamber is within a range of 10 to 5000 W in said plasma treatment step. 7. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein a duration for said inert gas plasma treatment is within a range of 1 to 600 seconds in said plasma treatment step. 8. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein any one type or more selected from He, Ne, Ar, Kr, and Xe is used as the inert gas to be circulated in said chamber in said plasma treatment step. 9. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein a temperature of said substrate is set within a range of room temperature to 800° C in said plasma treatment step. 10. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein said plasma treatment step is performed under a pressure within a range of 1×10−5 to 10 Pa in said chamber. 11. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein said semiconductor thin film is laminated within a range of 1 to 1000 times of alternate repetitions of said film formation step and said plasma treatment step, in said sputtering step. 12. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein an interval within a range of 1 to 300 seconds is provided between said film formation step and said plasma treatment step to be alternately repeated in said sputtering step. 13. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein an adjustment step for changing at least any one treatment condition of said film formation step or said plasma treatment step is provided between said film formation step and said plasma treatment step to be alternately repeated in said sputtering step. 14. The method for manufacturing a Group III nitride semiconductor according to claim 13, wherein said adjustment step is for changing at least any one treatment condition amongst a treatment duration or a substrate temperature in said film formation step, or a power, a treatment duration, a substrate temperature, or a pressure in the chamber in said plasma treatment step. 15. The method for manufacturing a Group III nitride semiconductor according to claim 1, wherein a step for forming a ground layer comprised of a Group III nitride semiconductor on said substrate is provided at least prior to said sputtering step. 16. A method for manufacturing a Group III nitride semiconductor light-emitting device which comprises a semiconductor layer having an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively comprised of Group III nitride semiconductors and sequentially laminated, in which at least a part of said p-type semiconductor layer is doped with Mg, the method comprising: forming at least a part of said p-type semiconductor layer by the method for manufacturing a Group III nitride semiconductor according to claim 1. 17. A Group III nitride semiconductor light-emitting device comprising: a semiconductor layer having an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer respectively comprised of Group III nitride semiconductors and sequentially laminated, in which at least a part of said p-type semiconductor layer is doped with Mg, wherein at least a part of said p-type semiconductor layer is formed by the method for manufacturing a Group III nitride semiconductor according to claim 1. 18. The Group III nitride semiconductor light-emitting device according to claim 17, wherein a thickness of said p-type semiconductor layer is set within a range of 0.05 to 1 μm. 19. The Group III nitride semiconductor light-emitting device according to claim 17, wherein a Mg dopant concentration in said p-type semiconductor layer is set within a range of 1×1019 to 5×1020/cm3. 20. The Group III nitride semiconductor light-emitting device according to claim 17, wherein a hydrogen concentration in said p-type semiconductor layer is set at 1×1016/cm3 or lower. 21. A lamp including a frame and comprising the Group III nitride semiconductor light-emitting device according to claim 17 bonded to said frame.