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A solid-state photomultiplier is provided for use in imaging detectors. The solid-state photomultiplier includes a plurality of microcells configured to detect impinging photons. Each of the plurality of microcells further includes a photodiode coupled to a common electrode through a quenching resis

A solid-state photomultiplier is provided for use in imaging detectors. The solid-state photomultiplier includes a plurality of microcells configured to detect impinging photons. Each of the plurality of microcells further includes a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signals, and an impedance device coupled in parallel with the quenching resistor so as to reduce overall quenching impedance at high frequency. Further, techniques are provided for implementing low impedance device with controllable value to the SSPM for optimized timing resolution.

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1. A solid-state photomultiplier, comprising: a plurality of microcells configured to detect impinging photons, each of the plurality of microcells comprising:a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signa

1. A solid-state photomultiplier, comprising: a plurality of microcells configured to detect impinging photons, each of the plurality of microcells comprising:a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signals; andan impedance device coupled in parallel with the quenching resistor so as to reduce overall quenching impedance at high frequency. 2. The solid-state photomultiplier of claim 1, wherein the impedance device is fabricated from an optically transparent or an optically semitransparent material so as to allow the impinging photons to pass through and to be detected by the photodiode. 3. The solid-state photomultiplier of claim 2, wherein the optically transparent or the optically semitransparent material comprises indium tin oxide (ITO). 4. The solid-state photomultiplier of claim 1, wherein the impedance device is fabricated from an optically non-transparent material. 5. The solid-state photomultiplier of claim 4, wherein the impedance device is provided so as not to block the impinging photons from being detected by the photodiode. 6. The solid-state photomultiplier of claim 1, wherein an excess current initially flows through the cell when the cell begins to avalanche upon absorption of the impinging photons. 7. The solid-state photomultiplier of claim 1, wherein the impedance device is a capacitive device. 8. The solid-state photomultiplier of claim 7, wherein one of the plates of the capacitive device is the photodiode and the other plate is an optically transparent or an optically semitransparent electrode disposed over the photodiode. 9. The solid-state photomultiplier of claim 7, wherein one of the plates of the capacitive device is the common electrode and the other plate is a conductive electrode disposed adjacent to the photodiode. 10. The solid-state photomultiplier of claim 7, wherein the capacitance of the capacitive device is optimized for better timing performance based on overall photodiode design. 11. A detector configured to detect radiation, the detector comprising: a scintillator block comprising one or more scintillator elements for converting the radiation into optical photons; anda solid-state photomultiplier coupled to the scintillator block and comprising a plurality of microcells configured to detect impinging photons, each of the plurality of microcells comprising:a photodiode coupled to a common electrode through a quenching resistor and configured to convert the impinging photons into electrical signals; andan impedance device coupled in parallel with the quenching resistor so as to reduce overall quenching impedance for high frequency electrical signals. 12. The detector of claim 11, wherein the impedance device is fabricated from an optically transparent or an optically semitransparent material so as to allow the impinging photons to pass through and to be detected by the photodiode. 13. The detector of claim 11, wherein the impedance device is fabricated from an optically non-transparent material and is provided so as not to block the impinging photons from being detected by the photodiode. 14. An imaging system, comprising: an array of detector units disposed around a subject for detecting radiation transmitted through the subject and for generating a detector output signal in response to the detected radiation, the detector unit comprising a scintillator block and a solid-state photomultiplier coupled to the scintillator block, the solid-state photomultiplier comprising a plurality of photodiodes coupled to one or more common electrodes through respective quenching resistors and a plurality of impedance devices coupled in parallel with the respective quenching resistors;a data acquisition system for acquiring the detector output signal; andan image reconstructor coupled to the data acquisition system for generating an image signal in response to the detector output signal. 15. The imaging system of claim 14, wherein each of the plurality of impedance devices is a capacitive device. 16. A method of manufacturing a solid-state photomultiplier, the method comprising: fabricating a plurality of microcells, each microcell comprising a photodiode coupled to a common electrode through a quenching resistor; andfabricating an impedance device in parallel with the quenching resistor. 17. The method of claim 16, wherein the impedance device is a capacitive device. 18. The method of claim 17, wherein fabricating the capacitive device comprises disposing a dielectric material over the photodiode and disposing an optically transparent or an optically semitransparent electrode over the dielectric material such that the photodiode, the dielectric material, and the optically transparent or the optically semitransparent electrode forms the capacitive device. 19. The method of claim 17, wherein fabricating the capacitive device comprises disposing a conductive electrode adjacent to the photodiode and disposing a dielectric material over the conductive electrode such that the conductive electrode, the dielectric material, and the common electrode forms the capacitive device. 20. A method for imaging a volume, the method comprising: detecting radiation transmitted through a subject via an array of detector units disposed around the subject, the detector unit comprising a scintillator block and a solid-state photomultiplier coupled to the scintillator block, the solid-state photomultiplier comprising a plurality of photodiodes coupled to one or more common electrodes through respective quenching resistors and a plurality of impedance devices coupled in parallel with the respective quenching resistors;generating a detector output signal in response to the detected radiation;acquiring the detector output signal; andgenerating an image signal in response to the detector output signal.