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A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN conta

A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths.

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1. A light emitting device comprising: a substrate member comprising a surface region;one or more light emitting diode devices overlying the surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing substrate, the at least one or more

1. A light emitting device comprising: a substrate member comprising a surface region;one or more light emitting diode devices overlying the surface region, at least one of the light emitting diode devices being fabricated on a semipolar or nonpolar GaN containing substrate, the at least one or more light emitting diode devices fabricated on the semipolar or nonpolar GaN containing substrate emitting substantially polarized emission of one or more first wavelengths;an optically transparent member coupled to the one or more light emitting diode devices;an optical path provided between the one or more light emitting diode devices and the optically transparent member;a thickness of one or more entities formed within a vicinity of the optically transparent member, one or more of the entities being excited by the substantially polarized emission to emit electromagnetic radiation at one or more second wavelengths;wherein the one or more light emitting diode device include a blue LED device capable of emitting electromagnetic radiation from about 430 nanometers to about 490 nanometers and the one or more entities is capable of emitting substantially yellow light, the substantially polarized emission being blue light; andwherein the one or more entities comprises a phosphor or phosphor blend selected from at least one of (Y,Gd,Tb,Sc,Lu,La)3(Al,Ga,In)5O12:Ce3+, SrGa2S4:Eu2+, SrS:Eu2+, and colloidal quantum dot thin films comprising CdTe, ZnS, ZnSe, ZnTe, CdSe, or CdTe. 2. The device of claim 1 wherein the thickness of the one or more entities is formed overlying a first side of the optically transparent member, the first side facing the one or more of the light emitting diode devices. 3. The device of claim 1 wherein the one or more light emitting diode device comprising at least a blue LED device, the substantially polarized emission being blue light. 4. The device of claim 1 wherein the one or more light emitting diode device comprises at least a blue LED device capable of emitting electromagnetic radiation at a wavelength range from about 430 nanometers to about 490 nanometers, the substantially polarized emission being blue light. 5. The device of claim 1 further comprising a phosphor capable of emitting substantially red light, wherein the phosphor is selected from one or more of the group consisting of (Gd,Y,Lu,La)2O3:Eu3+, Bi3+; (Gd,Y,Lu,La)2O2S:Eu3+, Bi3+; (Gd,Y,Lu,La)VO4:Eu3+, Bi3+; Y2(O,S)3:Eu3+; Ca1-xMo1-ySiyO4, where 0.05≦x≦0.5, 0≦y≦0.1; (Li,Na,K)5Eu(W,Mo)O4; (Ca,Sr)S:Eu2+; SrY2S4:Eu2+; CaLa2S4:Ce3+; (Ca,Sr)S:Eu2+; 3.5MgO*0.5MgF2*GeO2:Mn4+ (MFG); (Ba,Sr,Ca)MgxP2O7:Eu2+, Mn2+; (Y,Lu)2WO6:Eu3+, Mo6+; (Ba,Sr,Ca)3MgxSi2O8:Eu2+, Mn2+, wherein 1