[미국특허]
Valve and production method thereof
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
|
출원번호 |
US-0125614
(2008-05-22)
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등록번호 |
US-8141575
(2012-03-27)
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우선권정보 |
JP-2007-144486 (2007-05-31) |
발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
Fitzpatrick, Cella, Harper & Scinto
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인용정보 |
피인용 횟수 :
0 인용 특허 :
8 |
초록
▼
A valve includes a silicon substrate having first and second surfaces, a channel having an opening extending between both surfaces of the silicon substrate, and a metal pattern on the first surface of the silicon substrate. The metal pattern surrounds the opening on the first surface of the silicon
A valve includes a silicon substrate having first and second surfaces, a channel having an opening extending between both surfaces of the silicon substrate, and a metal pattern on the first surface of the silicon substrate. The metal pattern surrounds the opening on the first surface of the silicon substrate but does not close the opening. In addition, a low melting point metal member is disposed on the surface of the silicon substrate. The low melting point metal member covers at least a part of the metal pattern and completely closes the opening on the first surface of the silicon substrate.
대표청구항
▼
1. A valve comprising: a silicon substrate having first and second surfaces;a channel having an opening extending between both surfaces of the silicon substrate;a metal pattern on the first surface of the silicon substrate, the metal pattern surrounding the opening on the first surface of the silico
1. A valve comprising: a silicon substrate having first and second surfaces;a channel having an opening extending between both surfaces of the silicon substrate;a metal pattern on the first surface of the silicon substrate, the metal pattern surrounding the opening on the first surface of the silicon substrate without covering the opening; anda low melting point metal member on the surface of the silicon substrate, the low melting point metal member covering at least a part of the metal patternand completely closing the opening on the first surface of the silicon substrate. 2. The valve according to claim 1, wherein the channel has a diameter of 1 μm or more and less than 500 μm. 3. The valve according to claim 1, wherein the channel has a diameter of 1 μm or more and less than 300 μm. 4. The valve according to claim 1, wherein the metal pattern comprises copper as a main component thereof. 5. The valve according to claim 1, further comprising an adhesive layer between the silicon substrate and the metal pattern. 6. The valve according to claim 5, wherein the adhesive layer comprises chromium or titanium as a main component thereof. 7. The valve according to claim 1, wherein the low melting point metal member comprises an alloy containing at least one element of Bi, Sn, Pb, In, and Cd. 8. The valve according to claim 1, wherein the channel is formed in plurality, and the low melting point melting member covers the channels. 9. The valve according to claim 1, wherein a part of the low melting point metal member intrudes into the channel. 10. The valve according to claim 1, wherein a portion on the silicon substrate to which the low melting point metal member is deposited has a groove formed therein. 11. The valve according to claim 1, wherein a surface of the low melting point metal member and a surface of the silicon substrate to which the low melting point metal member is deposited are covered at least partially with a photoresist. 12. The valve according to claim 1, further comprising a heater for heating the low melting point metal member. 13. A valve comprising: a silicon substrate having first and second surfaces;a channel having an opening extending between both surfaces of the silicon substrate;an adhesive layer disposed on the first surface of the silicon substrate and surrounding the opening;a metal pattern disposed on the adhesive layer and surrounding the opening; anda low melting point metal disposed on the metal pattern, with the low melting point metal covering the opening on the first surface of the silicon substrate. 14. The valve according to claim 13, wherein the metal pattern comprises copper as a main component thereof. 15. The valve according to claim 13, wherein the adhesive layer comprises chromium or titanium as a main component thereof. 16. The valve according to claim 13, wherein the low melting point metal member comprises an alloy containing at least one element of Bi, Sn, Pb, In, and Cd. 17. The valve according to claim 13, wherein the channel is formed in plurality, and the low melting point melting member covers the channels. 18. The valve according to claim 13, wherein a part of the low melting point metal member intrudes into the channel. 19. The valve according to claim 13, wherein a portion on the silicon substrate to which the low melting point metal member is deposited has a groove formed therein. 20. The valve according to claim 13, wherein a surface of the low melting point metal member and a surface of the silicon substrate to which the low melting point metal member is deposited are covered at least partially with a photoresist. 21. The valve according to claim 13, further comprising a heater for heating the low melting point metal member.
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