초록 ▼

A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. T

A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.

대표청구항 ▼

1. A method of cleaving a substrate comprising: implanting a species into a substrate to form a layer of microbubbles;annealing said substrate at a temperature between 500° C. and 600° C.;annealing said substrate at a pressure greater than 1 atm in an environment of said species after said annealing

1. A method of cleaving a substrate comprising: implanting a species into a substrate to form a layer of microbubbles;annealing said substrate at a temperature between 500° C. and 600° C.;annealing said substrate at a pressure greater than 1 atm in an environment of said species after said annealing said substrate at said temperature between 500° C. and 600° C.; andcleaving said substrate along said layer of microbubbles. 2. The method of claim 1, wherein said substrate is composed of a material selected from the group consisting of Si, SiC, GaN, GaP, GaAs, and Ge. 3. The method of claim 1, wherein said species is selected from the group consisting of H, He, O, N, and another noble gas. 4. The method of claim 1, wherein said cleaving is selected from the group consisting of a thermal process, a chemical treatment, a fluid force, and a mechanical force. 5. The method of claim 1, wherein said pressure is between 2 atm and 100 atm. 6. The method of claim 1, further comprising diffusing said species into said substrate during said annealing at said pressure greater than 1 atm. 7. The method of claim 1, wherein said implanting is at a temperature of between 100° C. and 400° C. 8. The method of claim 1, wherein said annealing at said pressure greater than 1 atm is at a temperature between 200° C. and 400° C. 9. The method of claim 1, further comprising bonding said substrate to a handle prior to said cleaving. 10. A method of cleaving a substrate comprising: implanting a first dose of a species into a substrate to form a layer of microbubbles, said species selected from the group consisting of H and He;annealing said substrate at a pressure greater than 1 atm in an environment of said species, said annealing diffusing said species into said substrate and forming a second dose of said species in said substrate larger than said first dose; andcleaving said substrate along said layer of microbubbles. 11. The method of claim 10, wherein said substrate is composed of a material selected from the group consisting of Si, SiC, GaN, GaP, GaAs, and Ge. 12. The method of claim 10, wherein said cleaving is selected from the group consisting of a thermal process, a chemical treatment, a fluid force, and a mechanical force. 13. The method of claim 10, wherein said pressure is between 2 atm and 100 atm. 14. The method of claim 10, further comprising annealing said substrate at a temperature between 500° C. and 600° C. after said implanting and prior to said annealing said substrate at said pressure greater than 1 atm. 15. The method of claim 10, wherein said implanting is at a temperature of between 100° C. and 400° C. 16. The method of claim 10, wherein said annealing is at a temperature between 200° C. and 400° C. 17. The method of claim 10, further comprising bonding said substrate to a handle prior to said cleaving.