초록 ▼

In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form a

In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.

대표청구항 ▼

1. A method of forming active diffusion regions in a back side contact solar cell, the method comprising: providing a wafer to be processed into a solar cell, a front side of the wafer being configured to face the sun during normal operation of the solar cell;selectively depositing P-type dopant sou

1. A method of forming active diffusion regions in a back side contact solar cell, the method comprising: providing a wafer to be processed into a solar cell, a front side of the wafer being configured to face the sun during normal operation of the solar cell;selectively depositing P-type dopant sources and N-type dopant sources on a back side of the wafer, the back side being opposite the front side of the solar cell, the P-type and N-type dopant sources being selectively deposited by inkjet printing them on the back side of the wafer, the N-type dopant sources being selectively deposited overlapping the P-type dopant sources and on exposed portions on the back side of the wafer not covered by the P-type dopant sources; andperforming a diffusion step to diffuse dopants from the P-type dopant sources to form P-type active diffusion regions of the solar cell and dopants from the N-type dopant sources to form N-type active diffusion regions of the solar cell. 2. The method of claim 1 wherein the front side of the wafer is textured prior to forming the P-type and N-type dopant sources. 3. The method of claim 1 wherein the P-type and N-type dopant sources are selectively deposited in a single pass of an inkjet printing process. 4. The method of claim 1 further comprising: selectively depositing P-dopant sources and N-dopant sources by inkjet printing them on the back side of the wafer prior to performing the diffusion step; andperforming the diffusion step to diffuse dopants from the P-type dopant sources to form the P-type active diffusion regions of the solar cell, dopants from the N-type dopant sources to form the N-type active diffusion regions of the solar cell, dopants from the P-dopant sources to form P- active diffusion regions of the solar cell, and dopants from the N-dopant sources to form N- active diffusion regions of the solar cell. 5. The method of claim 2 wherein the front side of the wafer is textured using a texturing process comprising: thinning the front side and the back side of the wafer to partially remove damaged portions of the wafer on the front side and the back side;texturing the front side and the back side of the wafer to remove remaining damaged portions on the front side and the back side of the wafer; andpolishing the back side of the wafer to remove the texturing on the back side of the wafer. 6. A method of forming active diffusion regions in a back side contact solar cell, the method comprising: providing a wafer to be processed into a solar cell, a front side of the wafer being configured to face the sun during normal operation of the solar cell;selectively depositing a first set of dopant sources doped with a first dopant type on a back side of the wafer, the back side being opposite the front side of the solar cell, the first set of dopant sources being selectively deposited by inkjet printing them on the back side of the wafer;forming a second set of dopant sources doped with a second dopant type different from the first dopant type on the back side of the wafer, the second set of dopant sources being printed on the back side of the wafer;depositing a third set of dopant sources on the back side of the wafer prior to performing a diffusion step, the third set of dopant sources being lightly doped relative to the first set of dopant sources; andperforming the diffusion step to diffuse dopants from the first set of dopant sources to form a first set of active diffusion regions of the solar cell, dopants from the second set of dopant sources to form a second set of active diffusion regions of the solar cell, and dopants from the third set of dopant sources to form a third set of active diffusion regions of the solar cell. 7. The method of claim 6 wherein the front side of the wafer is textured prior to forming the first and second set of dopant sources using a texturing process comprising: thinning the front side and the back side of the wafer to partially remove damaged portions of the wafer on the front side and the back side;texturing the front side and the back side of the wafer to remove remaining damaged portions on the front side and the back side of the wafer; andpolishing the back side of the wafer to remove the texturing on the back side of the wafer. 8. A method of forming active diffusion regions in a back side contact solar cell, the method comprising: providing a wafer to be processed into a solar cell, a front side of the wafer being configured to face the sun during normal operation of the solar cell;selectively printing a first set of dopant sources on a back side of the wafer, the back side being opposite the front side of the solar cell;selectively printing a second set of dopant sources over the first set of dopant sources, the second set of dopant sources being selectively printed overlapping the first set of dopant sources and on exposed portions on the back side of the wafer not covered by the first set of dopant sources, the first set of dopant sources having different polarity compared to the second set of dopant sources; anddiffusing dopants from the first set of dopant sources to form a first set of active diffusion regions of the solar cell and dopants from the second set of dopant sources to form a second set of active diffusion regions of the solar cell. 9. The method of claim 8 wherein the first set of dopant sources comprises P-type dopant sources. 10. The method of claim 8 wherein the first and second set of dopant sources are selectively printed by inkjet printing. 11. The method of claim 8 further comprising: curing the first set of dopant sources prior to selectively printing the second set of dopant sources. 12. The method of claim 8 further comprising: curing the second set of dopant sources. 13. The method of claim 9 wherein the P-type dopant sources comprise boron. 14. The method of claim 9 wherein the second set of dopant sources comprises N-type dopant sources. 15. The method of claim 14 wherein the second set of dopant sources comprises phosphorus.