The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with a metal at a temperature T1 to obtain a silicon compound; SiHnCl4-
The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with a metal at a temperature T1 to obtain a silicon compound; SiHnCl4-n (1) wherein n is an integer of 0 to 3,(B) transferring the silicon compound to a zone having a temperature T2, wherein T1T2; and(C) depositing polycrystalline silicon in the zone having a temperature T2, wherein the temperature T1 is not less than 1.29 times of a melting point (Kelvin unit) of the metal, and the temperature T2 is higher than a sublimation point or boiling point of the chloride of the metal.
대표청구항▼
1. A method for producing polycrystalline silicon comprising the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with aluminum at a temperature T1 to obtain a silicon compound and a chloride of aluminum; SiHnCl4-n (1) wherein n is an integer of 0 to 3,(B) tran
1. A method for producing polycrystalline silicon comprising the steps of (A), (B), and (C), (A) reducing a chlorosilane represented by the formula (1) with aluminum at a temperature T1 to obtain a silicon compound and a chloride of aluminum; SiHnCl4-n (1) wherein n is an integer of 0 to 3,(B) transferring the silicon compound and the chloride of the aluminum to a zone having a temperature T2, wherein T1>T2; and(C) depositing polycrystalline silicon in the zone having a temperature T2, wherein the temperature T1 is not less than 1.41 times and is less than 2.33 times of a melting point expressed in Kelvin of aluminum, and the temperature T2 is not less than 1.5 times of a sublimation point or boiling point expressed in Kelvin of the chloride of aluminum. 2. The method according to claim 1, further comprising the step of (D), (D) purifying the polycrystalline silicon obtained in the step (C). 3. The method according to claim 1 or 2, wherein the chlorosilane is provided by a material that is a gas of the chlorosilane alone or a mixed gas of the chlorosilane and an inert gas. 4. The method according to claim 3, wherein the material has a chlorosilane content of not less than 10% by volume. 5. The method according to claim 1 or 2, wherein the chlorosilane is at least one selected from silicon tetrachloride, trichiorosilane, dichlorosilane, and monochlorosilane. 6. The method according to claim 1, wherein the aluminum has a purity of not less than 99.9% by weight and the purity is represented by the following formula: Purity (% by weight)=100−(Fe+Cu+Ga+Ti+Ni+Na+Mg+Zn) wherein Fe, Cu, Ga, Ti, Ni, Na, Mg and Zn indicate the contents (% by weight) of iron, copper, gallium, titanium, nickel, sodium, magnesium and zinc, respectively. 7. The method according to claim 1 or 2, wherein a gas flow rate in the zone at the temperature T2 is from not less than 0.62 m/min. to less than 1000 m/min.
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이 특허에 인용된 특허 (5)
Woditsch Peter (Krefeld DEX) Abels Martin (Krefeld DEX) Brazel Berthold (Krefeld DEX), Process for the production of silicon.
Kurz Gnter (Duesseldorf DEX) Abels Martin (Krefeld DEX) Schwirtlich Ingo (Krefeld DEX) Woditsch Peter (Krefeld DEX), Process for the production of solar silicon.
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