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Semiconductor devices, methods of making semiconductor devices, and coating compositions that can be used to provide a semiconductor layer within a semiconductor device are described. The coating compositions include a small molecule semiconductor, an insulating polymer, and an organic solvent that

Semiconductor devices, methods of making semiconductor devices, and coating compositions that can be used to provide a semiconductor layer within a semiconductor device are described. The coating compositions include a small molecule semiconductor, an insulating polymer, and an organic solvent that can dissolve both the small molecule semiconductor material and the insulating polymer. The small molecule semiconductor is an anthracene-based compound (i.e., anthracene derivative) substituted with two thiophene groups as well as with two silylethynyl groups.

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1. A coating composition comprising: (a) a small molecule semiconductor of Formula (I) wherein each R1 is independently alkyl, alkoxy, thioalkyl, hydroxyalkyl, heteroalkyl, alkenyl, alkynyl, aryl, aralkyl, halo, haloalkyl, trialkylsilyl, thienyl, formyl, acyl, alkoxycarbonyl, carboxy, aminocarbonyl,

1. A coating composition comprising: (a) a small molecule semiconductor of Formula (I) wherein each R1 is independently alkyl, alkoxy, thioalkyl, hydroxyalkyl, heteroalkyl, alkenyl, alkynyl, aryl, aralkyl, halo, haloalkyl, trialkylsilyl, thienyl, formyl, acyl, alkoxycarbonyl, carboxy, aminocarbonyl, aminosulfonyl, or combination thereof;each n is independently an integer equal to 0, 1, 2, or 3; andeach R2 is independently alkyl, alkoxy, alkenyl, aryl, heteroaryl, aralkyl, heteroalkyl, heteroaralkyl, or hydroxyalkyl;(b) an insulating polymer; and(c) an organic solvent, wherein the small molecule semiconductor of Formula (I) and the insulating polymer each have a solubility of at least 0.1 weight percent based on the total weight of the coating composition. 2. The coating composition of claim 1, wherein the small molecule semiconductor of Formula (I) comprises 3. The coating composition of claim 1, wherein each R2 is an alkyl having up to 10 carbon atoms. 4. The coating composition of claim 1, wherein each R1 is an alkyl having up to 10 carbon atoms and each R2 is an alkyl having up to 10 carbon atoms. 5. The coating composition of claim 1, wherein each R1 is a formyl group or an acyl having up to 10 carbon atoms, wherein the acyl group is unsubstituted or substituted with a halo. 6. The coating composition of claim 1, wherein the insulating polymer comprises polystyrene, poly(α-methylstyrene), poly(methyl methacrylate), polyvinylphenol, poly(vinyl alcohol), poly(vinyl acetate), polyvinylchloride, polyvinyldenfluoride, cyanoethylpullulan, or poly(divinyltetramethyldisiloxane-bis(benzocyclobutene)). 7. The coating composition of claim 1, wherein the organic solvent comprises (a) benzene that is unsubstituted or substituted with at least one alkyl group, (b) an alkane that is substituted with at least one halo group, (c) benzene that is substituted with at least one halo group, (d) a ketone, (e) an ether, (f) an amide, or (g) benzene that is substituted with at least one alkoxy group. 8. A semiconductor device comprising a semiconductor layer comprising: (a) a small molecule semiconductor of Formula (I) wherein each R1 is independently alkyl, alkoxy, thioalkyl, hydroxyalkyl, heteroalkyl, alkenyl, alkynyl, aryl, aralkyl, halo, haloalkyl, trialkylsilyl, thienyl, formyl, acyl, alkoxycarbonyl, carboxy, aminocarbonyl, aminosulfonyl, or combination thereof;each n is independently an integer equal to 0, 1, 2, or 3; andeach R2 is independently hydrogen, alkyl, alkoxy, alkenyl, aryl, heteroaryl, aralkyl, heteroalkyl, heteroaralkyl, or hydroxyalkyl; and(b) an insulating polymer. 9. The semiconductor device of claim 8, further comprising a conducting layer, a dielectric layer, or a combination thereof adjacent to the semiconductor layer. 10. The semiconductor device of claim 8, wherein the semiconductor device comprises an organic thin film transistor. 11. The semiconductor device of claim 8, further comprising an electrode layer comprising a source electrode and a drain electrode that are separated from each other and that are both in contact with the semiconductor layer. 12. The semiconductor device of claim 8, further comprising a conducting layer adjacent to one surface of the semiconducting layer and a dielectric layer adjacent to an opposite surface of the semiconducting layer. 13. The semiconductor device of claim 8, wherein the small molecule semiconductor of Formula (I) comprises 14. The semiconductor device of claim 8, wherein the insulating polymer comprises polystyrene, poly(α-methylstyrene), poly(methyl methacrylate), polyvinylphenol, poly(vinyl alcohol), poly(vinyl acetate), polyvinylchloride, polyvinyldenfluoride, cyanoethylpullulan, or poly(divinyltetramethyldisiloxane-bis(benzocyclobutene)). 15. A method of making a semiconductor device, the method comprising: providing a semiconductor layer comprising(a) a small molecule semiconductor of Formula (I) wherein each R1 is independently alkyl, alkoxy, thioalkyl, hydroxyalkyl, heteroalkyl, alkenyl, alkynyl, aryl, aralkyl, halo, haloalkyl, trialkylsilyl, thienyl, formyl, acyl, alkoxycarbonyl, carboxy, aminocarbonyl, aminosulfonyl, or combination thereof;each n is independently an integer equal to 0, 1, 2, or 3; andeach R2 is independently alkyl, alkoxy, alkenyl, aryl, heteroaryl, aralkyl, heteroalkyl, heteroaralkyl, or hydroxyalkyl; and(b) an insulating polymer. 16. The method of claim 15, further comprising providing a first layer adjacent to the semiconductor layer, the first layer comprising a conducting layer or a dielectric layer. 17. The method of claim 15, wherein the semiconductor device comprises an organic thin film transistor comprising multiple layers arranged in the following order: a gate electrode;a gate dielectric layer;the semiconductor layer; andan electrode layer comprising a source electrode and a drain electrode, wherein the source electrode and the drain electrode are separated from each other and wherein the semiconductor layer contacts both the drain electrode and the source electrode. 18. The method of claim 15, wherein the semiconductor device comprises an organic thin film transistor comprising multiple layers arranged in the following order: a gate electrode;a gate dielectric layer;an electrode layer comprising a source electrode and a drain electrode, wherein the source electrode and the drain electrode are separated from each other; andthe semiconductor layer in contact with both the source electrode and the drain electrode. 19. The method of claim 15, wherein the insulating polymer comprises polystyrene, poly(α-methylstyrene), poly(methyl methacrylate), polyvinylphenol, poly(vinyl alcohol), poly(vinyl acetate), polyvinylchloride, polyvinyldenfluoride, cyanoethylpullulan, or poly(divinyltetramethyldisiloxane-bis(benzocyclobutene)). 20. The method of claim 15, wherein providing the semiconductor layer comprises applying a coating composition to a surface of another layer of the semiconductor device, the coating composition comprising the small molecule semiconductor of Formula (I), the insulating polymer, and an organic solvent that dissolves at least a portion of both the small molecule semiconductor and the insulating polymer. 21. The method of claim 20, wherein the small molecule semiconductor of Formula (I) and the insulating polymer each have a concentration of at least 0.1 weight percent based on a total weight of the coating composition. 22. The method of claim 20, further comprising removing at least a portion of the organic solvent after applying the coating composition.