Electronics and Telecommunications Research Institute
대리인 / 주소
Rabin & Berdo, P.C.
인용정보
피인용 횟수 :
1인용 특허 :
9
초록▼
Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding
Provided are gas storage medium, a gas storage apparatus having the same and a method thereof. The gas storage medium includes a plurality of material layers each having a variable valence, wherein each of the material layers includes redundant electrons that are not participated in chemical bonding.
대표청구항▼
1. A gas storage medium comprising: a plurality of material layers each having a variable valence,wherein each of the material layers includes redundant electrons that do not participate in chemical bonding and is made of nanowire crystalline,wherein one of the material layers is made of a compound
1. A gas storage medium comprising: a plurality of material layers each having a variable valence,wherein each of the material layers includes redundant electrons that do not participate in chemical bonding and is made of nanowire crystalline,wherein one of the material layers is made of a compound including a transition metal, the compound selected from the group consisting of LaNi5, MnNi3, Mg2Ni, TiMn2, TiV2, TiFe, TiCo, TiVCr, TiVMn, Mg2Cu, ZrMn2, ZrV2, and LiAl. 2. The gas storage medium of claim 1, further comprising an absorbable/desorbable material disposed between the material layers and chemically and physically bonded with the material layers in a molecular form. 3. The gas storage medium of claim 1, wherein each of the material layers is made of a different material. 4. The gas storage medium of claim 1, wherein the material layers are separated from each other by a distance of about 0.1 to 100 nm. 5. The gas storage medium of claim 1, wherein a target material to be stored in the gas storage medium chemically bonds with the nanowire crystalline in a space between adjacent material layers. 6. The gas storage medium of claim 5, wherein the chemical bond is one of an ionic bond, a metallic bond, and a van der Waals bond. 7. The gas storage medium of claim 1, wherein in the material layers other than the one layer, the nanowire crystalline is made of one selected from the group consisting of a semiconductor nano material, and a compound that includes a transition metal. 8. The gas storage medium of claim 7, wherein each of the material layers other than the one layer includes a material that includes a transition metal selected from the group of transition metals consisting of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, and Hg. 9. The gas storage medium of claim 7, wherein each of the material layers other than the one layer is made of a compound that includes a transition metal, the compound selected from the group consisting of LaNi5, MnNi3, Mg2Ni, TiMn2, TiV2, TiFe, TiCo, TiVCr, TiVMn, Mg2Cu, ZrMn2, ZrV2, and LiAl. 10. The gas storage medium of claim 7, wherein the nanowire crystalline of each of the material layers other than the one layer is formed of a vanadium oxide. 11. The gas storage medium of claim 10, wherein the vanadium oxide is an oxide selected from the group consisting of VO2, V2O3, and V2O5. 12. The gas storage medium of claim 7, wherein the nanowire crystalline of the plurality of material layers is doped with a doping material by ion implantation when a sample of the nanowire crystalline of the plurality of material layers synthesizes or after a sample of the nanowire crystalline of the plurality of material layers synthesizes. 13. The gas storage medium of claim 12, wherein the doping material is a transition metal in the form of an ion. 14. The gas storage medium of claim 7, wherein the nanowire crystalline is formed by adding an ion exchange resin to solvent. 15. The gas storage medium of claim 14, wherein the solvent includes a material having a surface area of 1 nm2 to 10000 μm2. 16. The gas storage medium of claim 14, wherein the solvent includes one selected from the group consisting of a carbon nanotube, a conductive nanowire, a non-conductive nanowire, and an organic material. 17. The gas storage medium of claim 14, wherein the solvent is mixed with at least a polymer selected from the group consisting of polypyrrole, polyacetylene, and polyethylene. 18. The gas storage medium of claim 1, wherein the nanowire crystalline is formed in a nano thin film, a pellet bulk, or a film. 19. A gas storage apparatus comprising: a gas storage medium according to claim 1;a heating member for heating the gas storage medium; anda cooling member for cooling the gas storage medium. 20. A gas storage apparatus comprising: a chamber;a gas storage medium disposed in the chamber;a heating member for heating the gas storage medium; anda cooling member for cooling the gas storage medium,wherein the gas storage medium includes a plurality of material layers each having a variable valence and each of the material layers includes redundant electrons that do not participate in chemical bonding. 21. The gas storage apparatus of claim 20, wherein the chamber includes: an inlet for inserting a target material to store into the gas storage medium; andan outlet for discharging the target material from the gas storage medium,wherein the gas storage medium further includes a supporting member for supporting the material layers. 22. A method for storing a gas using a gas storage apparatus including a chamber, a gas storage medium disposed in the chamber, a heating member for heating the gas storage medium, and a cooling member for cooling the gas storage medium, comprising the steps of: heating the gas storage medium through the heating member;inserting a target material in the gas storage medium; andstoring the target material in the gas storage medium by cooling the gas storage medium through the cooling member. 23. The method of claim 22, further comprising the step of cooling the gas storage medium to a normal temperature before the step of inserting a target material. 24. The method of claim 22, wherein in the step of heating a gas storage medium, the inside of the gas storage medium is sustained in a vacuum state and, the gas storage medium is heated to desorb a material absorbed in the gas storage medium. 25. The method of claim 22, further comprising the step of discharging the material desorbed from the gas storage medium to an outside of the chamber.
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이 특허에 인용된 특허 (9)
Sungho Jin, Article comprising small diameter nanowires and method for making the same.
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