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A method of fabricating a flexible display device. The method includes forming an adhesive layer on a first carrier substrate; laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer; forming a th

A method of fabricating a flexible display device. The method includes forming an adhesive layer on a first carrier substrate; laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer; forming a thin film transistor array on the first flexible substrate; and separating the first carrier substrate from the flexible substrate by directing a laser beam onto the first separation layer. The first separation layer comprises silicon nitride (SiNx) with amounts of nitride A1 and amounts of silicon B1 satisfying 0.18≦{A1/B1}≦0.90.

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1. A method of fabricating a flexible display device, comprising: forming an adhesive layer on a first carrier substrate;laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer;forming a thin film

1. A method of fabricating a flexible display device, comprising: forming an adhesive layer on a first carrier substrate;laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer;forming a thin film transistor array on the first flexible substrate; andseparating the first carrier substrate from the first flexible substrate by directing a laser beam onto the first separation layer,wherein the first separation layer comprises silicon nitride (SiNx), and wherein the silicon nitride of the first separation layer comprises an amount of nitride A1 and an amount of silicon B1, the amount of nitride A1 and the amount of silicon B1 satisfying 0.18≦{A1/B1}≦0.90. 2. The method of claim 1, wherein the first flexible substrate further comprises a first barrier layer, andthe first barrier layer contacts the first separation layer. 3. The method of claim 2, wherein the first barrier layer comprises silicon nitride, the silicon nitride of the first barrier layer comprising an amount of nitride A2 and an amount of silicon B2, andthe amount of nitride A2 and the amount of silicon B2 satisfy the condition (A2/B2)>(A1/B1). 4. The method of claim 3, wherein the amount of nitride A1 and the amount of silicon B1 satisfy the condition 0.18≦{A1/B1}≦0.70. 5. The method of claim 4, further comprising: after the separating, maintaining a contact between the first barrier layer and a remainder of the first flexible substrate. 6. The method of claim 1, further comprising forming the first separation layer in the presence of a reaction gas, the reaction gas comprising argon and nitride in a ratio in the range of 7:1 to 20:1. 7. The method of claim 1, further comprising: after the forming a thin film transistor array, forming a display layer on the first flexible substrate; andforming an opposite substrate on the display layer. 8. The method of claim 7, wherein the display layer comprises at least one of a liquid crystal layer, an electrophoretic film, and a light emitting layer. 9. The method of claim 1, wherein the separating the first carrier substrate further comprises: directing a laser beam through the first carrier substrate so as to focus the laser beam on the first separation layer. 10. The method of claim 9, wherein the directing further comprises focusing the laser beam on the first separation layer so as to at least partially alter a composition of the first separation layer. 11. The method of claim 9, wherein the adhesive layer comprises a polymer adhesive comprising a series of at least one of silicon and an acryl. 12. The method of claim 11, wherein the adhesive layer comprises polydimethylsiloxane. 13. The method of claim 1, wherein the laser beam comprises an excimer laser beam having a wavelength of approximately 265 nm to approximately 308 nm. 14. A method of fabricating a flexible display device, comprising forming a first adhesive layer on a first carrier substrate;laminating a first flexible substrate on the first adhesive layer so that a first separation layer of the first flexible substrate is disposed on the first adhesive layer;forming a thin film transistor array on the first flexible substrate;forming a second adhesive layer on a second carrier substrate;laminating a second flexible substrate on the second adhesive layer so that a second separation layer of the second flexible substrate is disposed on the second adhesive layer;forming a color filter array on the second flexible substrate;coupling the first flexible substrate to the second flexible substrate;separating the first carrier substrate from the first flexible substrate by directing a first laser beam onto the first separation layer; andseparating the second carrier substrate from the second flexible substrate by directing a second laser beam onto the second separation layer,wherein the first separation layer comprises silicon nitride (SiNx), and wherein the silicon nitride of the first separation layer comprises an amount of nitride A1 and an amount of silicon B1, the amount of nitride A1 and the amount of silicon B1 satisfying 0.18≦{A1/B1}≦0.90. 15. The method of claim 14, wherein the first and second flexible substrates respectively further comprise first and second barrier layers,the first barrier layer contacts the first separation layer, andthe second barrier layer contacts the second separation layer. 16. The method of claim 15, wherein the first barrier layer and the second barrier layer each comprise silicon nitride. 17. The method of claim 16, further comprising forming a display layer between the first flexible substrate and the second flexible substrate. 18. The method of claim 17, wherein the display layer comprises at least one of a liquid crystal layer, an electrophoretic film, and a light emitting layer. 19. The method of claim 17, wherein: the directing a first laser beam further comprises directing the first laser beam through the first adhesive layer so as to focus the first laser beam on a surface of the first separation layer; andthe directing a second laser beam further comprises directing the second laser beam through the second adhesive layer so as to focus the second laser beam on a surface of the second separation layer. 20. The method of claim 19, wherein the first and second laser beams each comprise an excimer laser with a wavelength of approximately 265 nm to approximately 308 nm.